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Silicon wafers

Gallium Antimonide

Silicon on Insulator

Gallium Arsenide

Gallium Phosphide

Gallium Nitride

Germanium

Indium Phosphide

Indium Arsenide

Silicon Carbide

Thermal Oxide

Cadmium Selenide

Cadmium Telluride

Zinc Oxide

Zinc Sulfide

Zinc selenide

Zinc Telluride

Indium Antimonide
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Scoll down for more info on the following

  • Undoped GaN Template
  • n-type GaN Template
  • p-type GaN Template
  • AlGaN Template 
  • Blue LED Wafer
  • UV-A LED Wafer

AlN, GaN, SiC

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Fill out the form and let us know what wafers you would like or enter your specs for an immediate quote.

 

Undoped GaN Template

Substrate

Type

Plane

PSS

Size

50.8mm

100mm

50.8mm

100mm

u-GaN

Thickness
Carrier con.
Mobility

t~4µm
n<1E17cm-3
µ>200cm²/Vs

XRD FWHM

(002)

~300arcsec

(102)

~300arcsec

All spec can be customized as per requirements.

Structure of Templates

un-GaN

C-plane Sapphire sub.
(plane or patterned)

  • More efficient R&D
    resources utilization –
    Enable to focus on MQW
    and p-side
  • P-GaN evaluation on
    semi-insulating un-GaN
     

n-type GaN Template

Substrate

Type

Plane

PSS

Size

50.8mm

100mm

50.8mm

100mm

n-GaN

Thickness
Carrier con.
Mobility

t~4µm
1E18cm-3<n<1E19cm-3
µ>150cm²/Vs

XRD FWHM

(002)

~300arcsec

(102)

~300arcsec

All spec can be customized as per requirements.

p-type GaN Template

Substrate

Type

Plane

PSS

Size

50.8mm

100mm

50.8mm

100mm

p-GaN

Thickness
Carrier con.
Mobility

t~2µm
p>5E17cm-3
µ~10cm²/Vs

XRD FWHM

(002)

~300arcsec

(102)

~300arcsec

All spec can be customized as per requirements.

AlGaN Template 

Substrate

Type

Plane

PSS

Size

50.8mm

100mm

50.8mm

100mm

AlxGa1-xN

Thickness
Al comp.
Type

t : ~20nm, 100nm, 200nm
X(Al) : 5, 10, 15, 20, 30, 50, 100%
Type : undoped, n-type, p-type

XRD FWHM

(002)

~300arcsec

(102)

~300arcsec

All spec can be customized as per requirements.

Blue LED Wafer

Substrate

Type

Plane

PSS

Size

50.8mm

100mm

50.8mm

100mm

Blue LED Wafer

Dominant Wavelength
Full width half
maximum
Output Power
Forward Voltage
Turn on Voltage
Reverse Voltage
 

Wd : 440, 450, 460nm (unif.<5nm)
FWHM : ~20nm
Po : ~180/170/160mW
(@440/450/460nm)
Vf : ~3.15V (@120mA)
Vt ~2.3V (@1µA)
Vr ~15V (@-10µA)

XRD FWHM

(002)

~300arcsec

(102)

~300arcsec

All spec can be customized as per requirements.
All LED Specs are depend on fab. Process condition.
 

UV-A LED Wafer

Substrate

Type

Plane

PSS

Size

50.8mm

100mm

50.8mm

100mm

UV-A LED Wafer 

Peak Wavelength
Full width half
maximum
Output Power
Forward Voltage
Turn on Voltage
Reverse Voltage

Wp : 375, 385, 395nm (unif. <5nm)
FWHM : ~10nm
Po : ~30/60/90mW (@375/385/395nm)
Vf : ~3.25V (@120mA)
Vt ~2.2V (@1µA)
Vr ~10V (@-10µA)
 

XRD FWHM

(002)

~300arcsec

(102)

~300arcsec

All spec can be customized as per requirements.
All LED Specs are depend on fab. Process condition.
 

Si

Gallium Antimonide

SOI

GaAs

Gallium Phosphide

GaN

Ge

InP

Ultra-Thin Silicon

ZnO

SiC - Silicon Carbide

Thermal Oxide

Structure of Templates

n-GaN

un-GaN

C-plane Sapphire sub.
(plane or patterned)

  • Unique PSS design and
    professional GaN merging
    technology for HB LED
  • More efficient R&D
    resources utilization –
    Enable to focus on MQW
    and p-side
  • Capacity increase by shorter
    run time without new
    investment for MOCVD
     

 

 

 

 

 

 

 

 

 

Structure of Templates

p-GaN

un-GaN

C-plane Sapphire sub.
(plane or patterned)

A-Type

p-GaN

C-plane Sapphire sub.
(plane or patterned)

B-Type

 

 

 

 

 

 

 

 

 

Structure of Templates

AlGaN

un-GaN

C-plane Sapphire sub.
(plane or patterned)

A-Type

AlGaN

C-plane Sapphire sub.
(plane or patterned)

B-Type

 

 

 

 

 

 

 

 

Structure of Blue LED
Wafer

p-layer (~150nm)

Active layer (~100nm)

n-layer (~3.5um)

undope-layer (~2um)

C-plane Sapphire sub.
(plane or patterned)

 

 

 

 

 

 

 

 

 

 

 

Structure of UV-A LED
Wafer

p-layer (~150nm)

Active layer (~100nm)

n-layer (~3.5um)

undope-layer (~2um)

C-plane Sapphire sub.
(plane or patterned)