Silicon Carbide Wafers & SiC Epitaxy

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

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4H Silicon Carbide (SiC) Wafer Applications include

4H-N SiC Substrates/SiC Epitaxy

• Optoelectronics
• Power-factor correction
• Solar inverters
• Industrial motor drives


4H-HPSI SiC Substrates/III-Nitride Epitaxy

• High-power RF
• Graphene
• Terahertz

Difference Between Prime and Research Grade Silicon Carbide Wafers

The difference of Prime grade and Research grade SiC:

- “Prime grade” with useable area>/=90%,defect density i.s MPD</=5/cm^2,resistivity uniformity >/=90%, best "thickness, warp & bow" value,No Surface defects


- “Research grade” with useable area>/=80%,defect density i.s MPD</=10/cm^2,,resistivity uniformity >/=80%, better "thickness, warp & bow" value,Very few and small Surface defects

 

Silicon Carbide (SiC) Substrate and Epitaxy

Buy Online and SAVE! See bottom of page for some of our SiC inventory.

SiC substate (epi ready), N type and Semi-insulating,polytype 4H and 6H in different quality grades, Micropipe Density (MPD):Free, <5/cm2, <10/cm2, <30/cm2,<100/cm2

SiC Epitaxy:Wafer to wafer thickness uniformity: 2% ,Wafer to wafer doping uniformity: 4%.

silicon carbide wafers epitaxy

 

Current Inventory Includes, but not limited to the following. We also have < 25.4mm, 25.4mm, 76.mm, 100mm available.

<6H-N

<50.8mm N/Nitrogen <0001>+/0.5 deg 330um 0.02 ~ 0.2 Ω·cmSSP Epi Ready Roughness <0.5nm

<4H-N

<50.8mm N/Nitrogen <0001>+/-0.5 deg 330um 0.01-0.1 Ω·cm  SSP Epi Ready< Roughness : <0.5 nm

Please provide us with your specs or ask to see our inventory! Below are just some of the SiC wafers that we have in stock.

Buy as few as one Silicon Carbide Wafer (SiC) Wafer!

2" Silicon Carbide (SiC) 6H N-Type Epi-Ready


2" dia, 6H-N
Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
D Grade,MPDä100 cm-2 D Grade,RT:0.02-0.2 Ω·cm
Single face polished/Si face epi-ready with Chemical Mechanical Polish (CMP),Surface Roughness : <0.5 nm

2" 6H N-Type
6H-N 2" dia, Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPDä30 cm-2 B Grade,RT 0.02 ~ 0.2 Ω·cm
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 

2" Silicon Carbide (SiC) 4H N-Type Epi-Ready

2" 4H N-Type
4H-N 2" dia, Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
D Grade,MPDä100 cm-2 D Grade:RT:0.01-0.1 Ω·cm D Grade,Bow/Warp/TTV<25um
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

 

2" Silicon Carbide (SiC) 4H N-Type N-type Nitrogen Doped

4H-N 2" dia, Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPDä30 cm-2 B Grade:RT:0.01 - 0.1 Ω·cm B Grade,Bow/Warp/TTV<25um
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 

3" Silicon Carbide (SiC) 4H N-Type

4H-N 3" dia, Type/ Dopant : N / Nitrogen
Orientation :4 degree+/-0.5 degree 
Thickness : 350 ± 25 um
D Grade,MPDä100 cm-2 D Grade,RT:0.01-0.1Ω·cm D Grade,Bow/Warp/TTV<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 

3" 4H N-Type
4H-N 3" dia, Type/ Dopant : N / Nitrogen
Orientation : 4 degree+/-0.5 degree 
Thickness : 350 ± 25 um
B Grade,MPDä30 cm-2 B Grade,RT:0.01 - 0.1Ω·cm B Grade,Bow/Warp/TTV<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

3" 4H SI
4H-SI 3" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
D Grade,MPDä100 cm-2 D Grade,RT:70 % ≥1E5 Ω·cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

3" 4H SI
4H-SI 3" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
B Grade,MPDä30 cm-2 B Grade,RT:80 % ≥1E5 Ω·cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 

2" Semi Insulation Silicon Carbide 6H

2" 6H SI
6H-SI 2" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
D Grade,MPDä100 cm-2 D Grade,RT:70 % ≥1E5 Ω·cm
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

2" 6H SI
6H-SI 2" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPDä30 cm-2 B Grade,RT:85 % ≥1E5 Ω·cm
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 

4" N-type Silicon Carbide (SiC) 4H

4" 4H N-Type
4H-N 4"dia.(100mm±0.38mm),
Type/ Dopant : N / Nitrogen
Orientation : 4.0°±0.5°
Thickness : 350μm±25μm
D Grade,MPDä100 cm-2 D Grade,0.01~0.1Ω•cm D Grade,TTV/Bow /Warp<45um