Zinc Selenide (ZnSe) Wafers for Research & Production

university wafer substrates

ZnSe Used for CHG depositions

A PhD researcher requested a quote for the following:

I'm looking for a ZnS or ZnSe substrate for my CHG depositions. Usually I evaporate GeAsS and GeAsSe materials onto an SiO2 wafer but find myself needing to match CTE to prevent cracking under rapid/dramatic temperature changes. I have tried MgF2 substrates and they are a too fragile to work with and still result in cracking under the 100K temperatures we are using. I require a 4'' wafer of low quality. Ideally, I would like some certainty that adhesion would be good between the substrate and deposited material, but we already use an Ion Gun for SiO2 substrates, and I assume I will need to use the Ion Gun for a ZnS or ZnSe substrate. I don't know if you can provide substrates with 110,1_10 cleave planes but that would make my life easier if you could.

The issue is that I am working with Chalcogenide (GeAsSe) with an index of 2.4 and so will need a lower index substrate. I want to be able to cool it down to 100K and I need to dice it so that we have a flat surface. Hence why we need a matching CTE and a matching hardness.

Look forward to hearing from you. 

Reference #255481 for specs and pricing.

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Why Use Zinc Selenide (ZnSe) Wafers?

Zinc Selenide (ZnSe) is an emerging mid-infrared Waveguide material with a very high refractive index, excellent transmission, and high transmittance.


Zinc Sellenide (ZnSe) Substrates

Imprinted films containing Zinc Selenide were fabricated by using metal oxide in layering and then evaporating the resulting films showed a significant loss in the forward direction. The transmittance was then measured using a broadband optical imaging spectrometer and a Waveless Spherical Transfer Function model with an optical rotator. The results showed that the optical waveguides formed by Zinc Selenide absorbed only a small fraction of the incident light and exhibited good transmission when the broadband transmission was applied to the sample. This strong transmission is due to the thickness of the Selenide coating on the metal substrate. It also has good dispersion property with a good dispersion index (K dos ) and excellent transmission characteristics.


The most important property of Zinc Selenide is its ability to form crystals. This is due to the refractive index of the crystals being quite high. The crystals are preferably deposited on a metal surface but can be used with other substrates such as glass, ceramic, fibreboard, carbon, and so on. Different substrates have different optical properties. For instance, a substrate with a high refractive index will result in better transmission while a substrate with the lower refractive index will have better absorption. To balance the optical and physical properties, various other chemical reactions are used.

There have been some experimental optical devices made from Zinc Selenide which have been developed by optical microscopes in collaboration with scientists in the field of Nanotechnology. The device made from thin crystal materials was fabricated using a technique called atomization gas therapy. The device was fabricated using two types of zinc near-term fluorescent (NANO) and long-term fluorescent (LTCG) semiconductor devices. The device was fabricated using six different substrates.

The apparatus was fabricated with substrates with the ability to develop x-ray photos. These were developed for the purpose of developing chemical structure images. The photos developed from the Zinc Selenide crystal showed lines of transition in the area of the optical properties. These lines could be easily seen after completing the procedure. The entire process was completed on a coated glass slide. After the completion of the procedure, the thickness of the transparent Zinc Selenide thin films was measured and found to be nearly four times thicker than the glass slide.

The thickness, as well as the width of the Zinc Selenide thin films, is due to the thickness of the deposited substrate. The substrates with high refractive indexes are deposited first. Then, a thin layer of Zinc Selenide is deposited over the substrate. The thickness, as well as the width of the deposited layers, is dependent upon the refractive index of the transparent Zinc Selenide waveguide. Thus, it is believed that the thickness and the width of the deposited waveguide is dependent upon the refractive index of the zeolite.

The development of these Zinc Selenide thin films paved way for the commercialization of the Zinc Selenide technology. Several companies have utilized this technology for the purpose of making nanowires. Most of these companies have developed three different substrates. The three different substrates have been discovered to have the ability to grow nanostructures. The ability of the Zinc Selenide to grow three different shapes of nanowires led to the successful utilization of the technology for the commercialization of Zinc Selenide as an optical fiber.

Zinc Selenide has the capability of growing thin films with various nanometer thicknesses. The thin films, as well as the thicknesses depending on the thickness of the deposited coating, can be varied. The thin films with higher surface areas as well as the smaller surface areas will display the best characteristics. The growth of the nanowires, as well as the increase in the number of nanorongs produced using Zinc Selenide, are the two major benefits of the production of Zinc Selenide thin films. These are the reasons why many companies have adopted Zinc Selenide in their industry.

The use of Zinc Selenide as a replacement for the conventional metal was a difficult task for the early prototypes. The difficulty lies on the problem of maintaining the room temperature in the case of the films. This is because the metal was not capable of sustained room temperature as required for the fabrication of thin films. However, the researchers have managed to overcome this problem by the use of Zinc Selenide when heated to room temperature. This was then followed by the process of electron diffraction where the surface area was increased.