Indium Antimonide (InSb) Wafers for Research/Production

university wafer substrates

InSb Used in High-Performance Semiconductor Device Fabration

A PhD Candidate requested a quote for the following.

We need 2" Indium antimonide wafers to fabricate high-performance semiconductor devices.

InSb (100) 2" dia x 0.5 mm, Undoped, N type, SSP , 10 pcs

UniversityWafer, Inc. Quoted:

Item   Qty.   Description
HR88b. 10   Indium Antimonide wafers, Prime Grade, P/E 2"Ø×500±25µm,
                        n-type undoped InSb [100]±0.5°,
                        Nc < 1E15/cc,
                        One-side-polished, back-side matte etched, 2 Flats,
                        Sealed under nitrogen in single wafer cassette.

Reference # 274323 for specs and pricing.

Indium Antimonide Wafers 'Epitaxy Ready"' Polished wafers

Single crystals are grown in a pure fused silica system by the Czochralski method from multiple zone refined polycrystalline ingot.

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Below are just some of the Indium Antimonide wafers that we have in stock!

InSb (100) 10x10x 0.45 mm, N type, Te doped, SSP

InSb (100) 10x10x 0.45 mm, P type, Ge doped, SSP

InSb (100) 10x10x 0.45mm, Undoped, N type, DSP

InSb (100) 10x10x 0.5 mm, Undoped, N type, SSP

InSb (100) 5 x 5 x 0.5 mm, Undoped, N type, SSP

InSb (100) 2" dia x 0.5 mm, Undoped, N type, SSP

InSb (100) 2" dia x 0.4 mm, P type, Ge doped , SSP, Carrier Conc: 1.45 x 10^15 /cc

InSb (100) 2" dia x 0.45 mm, P type, Ge doped , SSP , carrier conc: (0.5-5.0)x10^17/cc

InSb (100) 2" dia x 0.45 mm, P type, Ge doped , DSP , CC: 1.35x10^15/cc

InSb (100) 2" dia x 0.45 mm, Te doped, N type, SSP

InSb (100) 2" dia x 0.5 mm, N type Undoped, DSP

InSb (111) 2" dia x 0.525 mm, Te doped, N type, DSP

InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, SSP

Other Wafers Include


What is Indium Antimonide (InSb)?

Indium Antimonide is a crystalline compound made of the elements indium and antimony. It is a narrow-gap semiconductor with a high electron mobility. Indium antimonide is commonly used in thermal imaging systems because it's a sensitive material between 1 and 5 mm in wavelength. This crystalline compound decomposes at temperatures above 500 degrees Celsius and releases vapors of antimony and indium.

This material is also used in microelectronics. Indium is also used to make thin films of Copper Indium Gallium Selenide, which are commonly used in high-performing solar cells. Its name comes from the Latin word indicum, which means "violet." In addition to these applications, Indium is an excellent semiconductor for a wide range of applications. However, what makes it unique is that it's relatively easy to grow in a vacuum.

Indium antimonide is a semiconductor material made by combining two different metals: indium and silver. Indium antimonide is a solid, whereas aluminium and silver are inactive. Indium antimonide is a conductive metal. The material has good electrical properties and can be easily processed. It's also used to make batteries. It's also used in the production of photovoltaic cells.

Researchers have studied a single indium antimonide nanowire. The device can detect infrared signals at room temperature. The diameter of an indium antimonide nanowire is around 10 nm, and the length tens of microns. These devices were developed using a vapor-liquid-solid (VLS) approach with an Au catalyst. The quantum confinement of the particles allows scientists to alter the energy of the band gap. The symmetric and asymmetric InSb nanowires are both capable of detecting infrared light at low temperatures and mid-infrared irradiation.

Below Raytheon's AIM-9X missile, incorporates an Indium Antimonide (InSb ) bandgap detector array.

In a paper released Wednesday, Intel researchers explain how two elements, indium and indium antimonide epi-ready waferantimony, can improve the performance of future transistors. [Sources: 3]

The invention concerns a substrate containing indium antimony (IndiA) and antimium in a single atom. The composition of the resulting "indium-antimony film" is similar to that of a typical silicon film, but has a slightly different chemical composition. N - type of conductivity etched into the substrate to obtain the desired pattern. A disc with a thickness of about 8 mil and a size of about 3 cm2 was placed in a crystal bowl [9], and the substrates are begging. [Sources: 0, 5]

The uniformly doped indium antimonide crystals were enclosed in a sealed quartz ampoule of about 3 cm2 in diameter and 1 mil in thickness [9]. [Sources: 5]

Silicon sits in the fourth column of the table, meaning it has four electrons in its outermost shell of electrons. Indium, on the other hand, sits in the third column of the tables, which means that it has three electrons in each outer layer. Silicon sits in the column iv of this table, which meant that silicon has two electrons on its innermost layer, while four electrons sit in silicon's outermost shell, the electron. [Sources: 3]

This is due to the resulting change in electron mobility, known as the hot electron reaction, which was first predicted by E.H. Putley in the 1960s and used by the invention of the first semiconductors with high - temperature, ultra-low - conductivity. It is predicted to cause a metal - such as degenerated gas, depending on temperature and NW conductivity. [Sources: 7, 10]

The electron-electron interaction time is the energy lost from the lattice by the electron-phonon interaction, and the electron-electron interaction time is the energy of the energy lost to the lattice by the electron-phonon interaction. [Sources: 7]

An important logic behind the decrease in thermal conductivity is that a decrease in phon density can reduce the thermal conductivity of the nw. We investigate the thermoelectric applications of InSb - nW in the context of thermally conductive materials such as semiconductors, photovoltaics and electronic materials. [Sources: 10]

In the future, we will use Fourier Transformation Infrared Spectroscopy (FTIR) to determine the thermal conductivity of InSb - nW using a focused ion beam and to perform electrical measurements. Finally, we will focus on the electrical and optical properties and discuss whether the nw diameter is dependent, and also discuss the possible applications in the field of photovoltaics and electronic materials. We will help stakeholders to design their strategies and strategies effectively and gain a competitive advantage over the indium antimonid industry. [Sources: 2, 9, 10]

A new infrared detector that is injected with indium antimony for the first time in a powerful, cost-effective and highly efficient photovoltaic detector. [Sources: 4]

Undoped InSb have a high ambient temperature and electron mobility, and the J10D series detector is designed to deliver a high quality, low cost and high efficiency photovoltaic detector. Undoped semiconductors have the highest energy density of any known semiconductor, with electron mobility up to 1,000 times higher than that of the most common and expensive of all known sediments, indium antimony (InB). [Sources: 1, 4, 6]

The main cause of the thermopower in InSb (nw) is the high electron mobility of indium antimony (InB) and its high energy density and thermal conductivity. [Sources: 10]

If both elements are combined into one transistor, the transistor can operate at high temperatures and be used in a wide range of applications, while indium antimonid transistors have a much higher degree of electron mobility, "says Willoner. The band gap is closer to the conduction and valence bands of InSb (nw) and induces different types of doping depending on the type of doping, such as Bi - Li - Te with n gedopt, or N - Doping with InB (n). The electronic configuration is similar to that of a graphite-diamond structure in which the carbon is arranged, but the band cleavage levels are higher, resulting in a more stable and higher thermal conductivity of the material than graphite and diamond. [Sources: 3, 8, 10]

Indium Antimonid Semiconductor Devices can also be operated at high temperatures, such as in devices that reduce the need for high-power transistors, high-voltage transistors and high-efficiency semiconductors. [Sources: 1]

We use the Luttingen liquid theory to investigate low-dimensional materials that suggest a performance law with a dependence on conductivity and heat. The band gap of InSb is observed between 0.17 eV and the thermoelectric power is generated by the temperature difference known as the Seebeck effect. We calculate the output power of indium antimony semiconductor devices in relation to mean band gaps at the growth temperatures required for the VLS synthesis method. Due to an interface state with high electron concentrations, a high voltage range between the high and low end of the spectrum can be observed, as is the case with a single - atomic - thick layer of indium antimony. [Sources: 10]

InSb - nw has also been used to produce semiconductor superconductors, as Majorana and Fermion have discovered using sophisticated instrumentation. As shown in Fig. 9, the smallest QD is made of pure indium antimony, which means that it contains no arsenic inclusions and a small amount of arsenic. [Sources: 0, 10]