Gallium Nitride

Gallium Nitride

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Sapphire
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Silicon wafers

Gallium Antimonide

Silicon on Insulator

Gallium Arsenide

Gallium Phosphide

Gallium Nitride

Germanium

Indium Phosphide

Indium Arsenide

Silicon Carbide

Thermal Oxide

Cadmium Selenide

Cadmium Telluride

Zinc Oxide

Zinc Sulfide

Zinc selenide

Zinc Telluride

Indium Antimonide
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GaN

Gallium Nitride Wafers and Aluminum Nitride

AlN, GaN, SiC

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  1. GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate.   50 mm diam  on axis, n-type, GaN thickness ~0.5 um 
  2. GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.  
  3. GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide. 50mm in diameter on-axis, n-type. GaN thickness  ~(0.5-0.8) um.  AIN thickness ~0.1um.
  4. GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire.  50mm in diameter, on-axis, n-type, GaN thickness  ~(0.5-0.8) um, AIN thickness ~0.1 um.

Si

Gallium Antimonide

SOI

GaAs

Gallium Phosphide

GaN

Ge

InP

Ultra-Thin Silicon

ZnO

SiC - Silicon Carbide

Thermal Oxide

GaN on Sapphire Wafer
Gan on Sapphire wafer