Order 12-Inch Silicon Carbide Wafers
UniversityWafer, Inc. supplies 12-inch (300mm) 4H-SiC wafers for advanced research in power electronics, RF, high-temperature devices, and semiconductor education. Both N-type conductive and HPSI semi-insulating substrates are available for device fabrication, epitaxy development, and pilot-line process work.
Need 12-Inch SiC Wafers?
N-Type and HPSI 4H-SiC available for device fabrication and epitaxy.
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Researchers choose 12-inch SiC wafers for:
- High-voltage MOSFET and diode development.
- Wide bandgap device fabrication for EV and aerospace applications.
- RF, mmWave, and microwave electronics research.
- Thermal management and high-temperature reliability studies.
- Scaling laboratory processes to 300mm-compatible toolsets.
Available Specifications
We offer a wide range of electrical and mechanical parameters to support various device architectures:
- 4H-SiC polytype with precise off-axis orientation.
- N-type (nitrogen) or HPSI high-resistivity material.
- Standard 300.0 ± 0.5 mm diameter.
- Typical thickness around 600–700 μm.
- Si-face CMP-polished surfaces for epitaxy.
Fast Quotes & Custom Orders
If you do not see the exact parameters required for your research, our team can help source specialty wafers or provide close alternatives. For faster assistance, please include:
- Polytype (4H-SiC)
- Doping (N-type or HPSI)
- Orientation and off-cut
- Thickness
- Resistivity range
Related Wide Bandgap and Substrate Resources
12-Inch Silicon Carbide Wafers (300mm 4H-SiC Substrates)
UniversityWafer, Inc. helps researchers and device engineers transition to 300mm (12-inch) silicon carbide wafers for next-generation power, RF, and high-temperature electronics. These large-area 4H-SiC substrates support higher throughput, larger die sizes, and scalable pilot-line production for wide bandgap device development.
Why 12-Inch Silicon Carbide Wafers?
Moving to 12-inch (300mm) SiC enables fabs and research labs to align wide bandgap process flows with mainstream silicon tools. Larger wafers:
- Increase the total number of die per wafer for power MOSFETs, diodes, and RF devices.
- Reduce cost per die once processes are stabilized and yields improve.
- Allow more statistically meaningful process studies on a single wafer run.
- Make it easier to integrate SiC unit processes into 300mm silicon pilot lines.
For universities, national labs, and industrial R&D groups, 12-inch SiC wafers provide a platform to prototype the same device architectures that will later scale into volume production.
12-Inch N-Type 4H-SiC Substrates
N-type 4H-SiC wafers are used for conductive device substrates in applications such as:
- High-voltage power MOSFETs and Schottky diodes for EV inverters and chargers.
- Industrial motor drives and high-efficiency power supplies.
- High-frequency, high-power RF and microwave amplifiers.
Typical 12-inch N-type SiC substrates are:
- Polytype: 4H-SiC with controlled off-axis orientation.
- Dopant: Nitrogen (N-type) with resistivity measured over the central 8-inch area.
- Diameter: 300.0 ± 0.5 mm with defined notch orientation and depth.
- Thickness: Representative values around 600–700 µm for mechanical stability.
- Front surface: Si-face, ground and CMP-polished for epitaxy.
- Back surface: C-face, ground and polished to support good thermal and electrical contact.
The following table summarizes typical 12-inch N-type 4H-SiC substrate specifications:
| Item | Unit | Dummy Grade | Production Grade |
|---|---|---|---|
| Polytype | -- | 4H | 4H |
| Surface orientation | ° | 4° toward [11-20] ± 0.5° | |
| Dopant | -- | N-type (Nitrogen) | |
| Resistivity | Ω·cm | Measured over the central 8-inch area | |
| Diameter | mm | 300.0 ± 0.5 | |
| Thickness | μm | 600 ± 50 / 700 ± 50 | |
| Notch orientation | ° | <1-100> ± 5° | |
| Notch depth | mm | 1 – 1.25 | |
| Micropipe density | ea/cm² | NA | < 10; |
| Front side | -- | Si-face | |
| Front surface finish | -- | Grinding, Si-face CMP | |
| Back finish | -- | Grinding, C-face polished | |
| Edge | -- | No chamfer | Chamfer |
| Packaging | -- | Multi/single-wafer cassette; vacuum-sealed foil | |
12-Inch HPSI 4H-SiC Substrates
High-purity semi-insulating (HPSI) 4H-SiC wafers are used wherever the substrate must have extremely high resistivity and minimal parasitic conduction. Typical applications include RF and microwave monolithic integrated circuits (MMICs) and high-frequency power amplifiers.
HPSI 12-inch wafers typically feature:
- Polytype: 4H-SiC with near-zero off-cut (<0001> orientation).
- Doping: Nominally undoped with very high resistivity.
- Front surface: Si-face CMP-polished for low-defect epitaxial growth.
| Item | Unit | Production Grade |
|---|---|---|
| Polytype | -- | 4H |
| Surface orientation | ° | <0001> ± 0.2° |
| Dopant | -- | None (HPSI) |
| Diameter | mm | 300.0 ± 0.5 |
| Thickness | μm | 600 ± 50 / 700 ± 50 |
| Micropipe density | ea/cm² | < 5; No aggregation |
| Front side | -- | Si-face |
| Surface finish (front) | -- | Si-face CMP |
| Back finish | -- | C-face polished |
| Edge | -- | Chamfer |
Applications in Research and Education
UniversityWafer, Inc. works with both industrial and academic users who are exploring wide bandgap devices for:
- Electric vehicles, charging infrastructure, and on-board power conversion.
- Renewable energy inverters, energy storage interfaces, and smart grid hardware.
- High-frequency communications, radar, and aerospace electronics.
We support single-wafer evaluation, small lots for process development, and larger quantities for pilot lines and teaching labs. To receive pricing, lead time, and availability on 12-inch N-type or HPSI SiC wafers, please use our online store or request a quote.