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Silicon-on-Insulator for fabricating Silicon Waveguides
Researchers have been using the following specs to fabricate the following SOI wafers as there is no additional absorbtion loss due to doping in integrated photonics work.
- Silicon Waveguides
- Grating Couplers
- Integrated Photonic Components
SOI Item #3536
25mm X 25mm P/B <100> 10-20 ohm-cm 725um SSP Prime
Other wafer diameters and dimensions are also available
UniversityWafer, Inc's silicon-on-insulator (SOI) wafers , can be used the following electronics applications:
- ultra-low power signal processing
- wireless connectivity
- power, image sensors and silicon photonics applications
- radio-frequency silicon-on-insulator (RF-SOI) substrates
- ultra-low power connectivity RF
UniversityWafer, Inc. can provide researchers with a wide range of engineered substrates including fast growing segments like automotive, AI-IoT (AIoT) and 5G.
Bonded Silicon-on-Insulator for Nanomaterials Research
Researchers have used the following SOI wafer item to research nanomaterials (applied physics) for quantum/photonic computation.
Si Item #3213
150mm P/B <100> 675um SSP
Device Layer: 2um Device Res 17-23 ohm-cm
Oxide: 0.5um
Handle Layer: 675um Res 4.8-7.2 ohm-cm
SOI Wafer for Silicon Waveguides
Research clients have used our Silicon-on-Insulator wafers for their silicon waveguide research.
SOI Item #3536
25mm X 25mm P/B <100> 10-20 ohm-cm 725um SSP Prime
SOI square, Device: 220nm, BOX: 3000nm Handle thick: 725+/-15um, TTV: <1um
Silicon on Insulator Wafers
We specialize in Small quantities orders!![]()
You need to increase your semiconductor device’s performance by decreasing electrical losses. SOI wafers is the solution. SOI reduces the power required and heat that’s generated, thus increasing the device’s efficiency and speed. SOI insulation, or oxide layer, thickness depends on the application. Thermal oxide from a few nanometers thick to many microns can be used in microelectronics as it reduces short-channel effects. Silicon on insulator wafers operate at lower temperature to doping. Higher device yield can be had because of SOI’s higher density.
SOI applications include
- Silicon Photonics
- Microelectronic Devices
- Radio Frequency (RF) Devices
Expensive Soitec SOI SOITEC SOI Wafers and Simox SOI wafers DICED into small and affordable pieces!
Bonded SOI Wafers made to order in small quantiles and short lead times.
We work with several SOI manufacturers to provide small quantities of SOI to you. Whole wafers and diced pieces available at a deep discount
For example we have a potential order for 50 of the following:
100mm P/B (100) 500um 10-20 ohm-cm Prime Grade
Device 340nm
Oxide 1,000nm
The manufacturer's minimum quantity is 50 wafers. But you only need say 1-3 wafers. We could potential buy 50 and sell you just a few at a very reasonable cost.
Other diameters such as 150mm is also possible. IF this interests you, please let us know. Or fill out the form below and let us know which specs you need!
Below are just some of our Thin Device Layer SOI Inventory
| ID | Diameter | Type | Dopant | Orientation | Resistivity (Ohm-cm) |
Thickness | Polish | Grade | Description |
|---|---|---|---|---|---|---|---|---|---|
| 3536 | 25mm X 25mm | P | B | <100> | 10–20 | 725um | SSP | Prime |
SOI square wafer. Device Layer: 220nm BOX Layer: 3000nm Handle Thickness: 725 +/-15um TTV: <1um |
| 3308 | 100mm | P | B | <100> | 1000–2000 | 483um | SSP | Prime |
BOX Thickness: 2.2um Device Layer: 27.5um Handle Resistivity: 1000–2000 ohm-cm Device Resistivity: 0.004–0.006 ohm-cm |
| 3213 | 150mm | P | B | <100> | 10–20 | 675um | SSP | Test |
Device Layer: 2um Oxide Layer: 0.5um Handle Layer: 675um Device Resistivity: 17–23 ohm-cm Handle Resistivity: 4.8–7.2 ohm-cm |
| 3381 | 150mm | P | B | <100> | 10–20 | 675um | SSP | Prime |
SOI Device Layer: 220nm BOX Layer: 2um MFR PN: SMB-6P675-2-0.22 |
| 2551 | 200mm | P | B | <100> | ~1–20 | 725um | SSP | Prime |
Device Thickness: 70nm Oxide Thickness: 2000nm |
| 3523 | 200mm | P | B | <100> | 10–20 | 725um | SSP | Prime |
Device Layer: 220nm BOX Layer: 3000nm |
SIMOX Silicon-on-Insulator SOI
We have the following thin device layer SOI available in small and large quantities. Please fill out the form for an immediate quote.
100mm SOI WAFERS
DEVICE TOP LAYER:
Diameter: 100±0.2mm
Type/Dopant: P/B
Orientation: (1-0-0)±0.5°
Thickness: 220±10nm
Resistivity: 8.5-11.5 ohm-cm
Finish: Frontside Polished
BURIED THERMAL OXIDE:
Thickness: 3μm±5%
HANDLE LAYER:
Diameter: 100±0.2mm
Type/Dopant: P/B
Orientation: (1-0-0)±0.5°
Thickness: 725±15um
Resistivity: ≥750 ohm-cm
Notch: Semi Standard
Back Finish: Etched + Oxide
Overall Wafer:
Edge exclusion: ≤5mm
TTV: ≤5μm, Warp: ≤50μm, Bow: ≤50μm
150mm SOI WAFERS
DEVICE TOP LAYER:
Diameter: 150±0.5mm
Type/Dopant: P/B
Orientation: (1-0-0)±0.5°
Thickness: 220±10nm
Resistivity: 8.5-11.5 ohm-cm
Finish: Frontside Polished
BURIED THERMAL OXIDE:
Thickness: 3μm±5%
HANDLE LAYER:
Diameter: 150±0.5mm
Type/Dopant: P/B
Orientation: (1-0-0)±0.5°
Thickness: 725±15um
Resistivity: ≥750 ohm-cm
Notch: Semi Standard
Back Finish: Etched + Oxide
Overall Wafer:
Edge exclusion: ≤5mm
TTV: ≤5μm, Warp: ≤50μm, Bow: ≤50μm