Diamond Semiconductor Substrate Advantages

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Diamond Substrates

Our diamond plates are of size 20mm x 20mm x 0.5mm to 5mmx5mmx0.5mm

In this range, thickness can be 0.5mm to 2.5mm as per requirement.

Price we have not listed yet. But once have an inquiry and quantity, we can give the price.

Other specifications are depends on customer like N2 concentration or boron concentration, surface finish, purity of diamondplates and so. Inventory.

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Diamond Semiconductor Substrates

Specification

Structure : Cubic, Single Crystalline
Grain Size : Thickness and process dependent (0.05 – 1 mm)
Thickness : up to 2 mm
Dimensional Tolerance : ±50 μm
Polishing Aspect Ratio : Up to 50:1 for diameters up to 145 mm
Power : <0.5 fringes/cm
Irregularity : <0.5 fringes/cm
Transmitted Wavefront : <0.5 fringes/cm
Surface Roughness : <15 nm

Optical Properties
Bulk Absorption @ 10.6 μm : <0.07 cm-1
Bulk Absorption @ 1 um : <1 cm-1
Scatter @ 1 μm : <0.7 cm-1

Diamond Heat Sinks 

10.0 x 10.0 X 0.50 (mm X mm X mm)

Specification

Length:10.0 mm

Width:10.0 mm

Thickness Dimension:0.5 mm

Edges:Laser Cut

Edge Features:< 0.2 mm

Laser Kerf:3°

Lateral Tolerance:+0.2/-0 mm

Side 1, Roughness, Ra:polished, Ra < 50 nm

Side 2, Roughness, Ra:lapped, Ra < 250 nm

Thickness Tolerance:+/- 0.05 mm

Diamond Heat Spreaders

10.0 X 10.0 X 0.50(mm X mm X mm)

Specification

Length:10 mm

Width:10 mm

Thickness Dimension:0.5 mm

Edges:Laser Cut

Edge Features:< 0.2 mm

Laser Kerf:3°

Lateral Tolerance:+0.2/-0 mm

Side 1, Roughness, Ra:polished, Ra < 50 nm

Side 2, Roughness, Ra:lapped, Ra < 250 nm

Thickness Tolerance:+/- 0.05 mm

Optical Components

OP Poly Ø10.0mm, 0.50mm thick

Specification

Diameter : Ø10.0mm

Thickness : 0.50 mm

Edges : Laser Cut

Edge Features : < 0.2 mm

Flatness (PV) (fringe @ 632nm) : <5

Laser Kerf : 3°

Lateral Tolerance : +0.1 / – 0.1 mm

Parallelism (µ/mm) : <0.4

Side 1, Roughness, Ra : polished, Ra < 15 nm, (over 1mm2)

Side 2, Roughness, Ra : polished, Ra < 15 nm, (over 1mm2)

Thickness Tolerance : +/- 0.05 mm

6.8 X 3.3 X 0.2 (mm X mm X mm)

Specification

Length:6.8 mm <110>

Width:3.3 mm <100>

Thickness:0.2 mm

Crystallographic Orientation (Miscut):+/-3°

Crystallography:Typically 100% single sector {100}

Edges:Laser Cut

Edge Features:< 0.2 mm

Edge Orientation:<100> edges & <110>

Face Orientation:{110} faces

Laser Kerf:3°

Lateral Tolerance:+0.2/-0 mm

Side 1, Roughness, Ra:polished, Ra < 30 nm

Side 2, Roughness, Ra:polished, Ra < 30 nm

Thickness Tolerance:+0.01/-0.02 mm

Nitrogen Concentration:< 1 ppm

Quantum Technologies

4.3 X 4.3 X 0.5 (mm X mm X mm)

Specification

Length : 4.3 mm

Width : 4.3 mm

Thickness : 0.5 mm

Crystallographic Orientation (Miscut) : +/-3°

Crystallography : Typically 100% single sector {100}

Edges : Laser Cut

Edge Features : < 0.2 mm

Edge Orientation : <110> edges

Face Orientation : {100} faces

Laser Kerf : <5°

Lateral Tolerance : +0.4 -0 mm

Side 1, Roughness, Ra : polished, Ra<5nm on {100} face

Side 2, Roughness, Ra : polished, Ra<5nm on {100} face

Thickness Tolerance : +/- 0.01 mm

(6) Detectors

3.0 X 3.0 X 0.5 (mm X mm X mm)

Specifications

Length:3.0 mm

Width:3.0 mm

Thickness:0.5 mm

Crystallographic Orientation (Miscut):+/-3°

Crystallography:Typically 100% single sector {100}

Edges:Laser Cut

Edge Features:< 0.2 mm

Edge Orientation:<100> edges

Face Orientation:{100} faces

Lateral Tolerance:+0.2/-0 mm

Side 1, Roughness, Ra:Ra < 10 nm

Side 2, Roughness, Ra:Ra < 10 nm

Thickness Tolerance:+/- 0.1 mm

Nitrogen Concentration:(before treatment) 800 ppb

Industrial Diamond Applications - Diamond Substrate Heat Spreaders and Wafer

Diamond Substrates Advantages and Disadvantages

Diamond semiconductor substrates have received growing interest in high-performance and high-power electronics due to their exceptional material properties. Here's a concise breakdown of the advantages and disadvantages of using diamond as a semiconductor substrate:

✅ Advantages of Diamond Semiconductor Substrates

  1. Exceptional Thermal Conductivity

    • Diamond has the highest known thermal conductivity (~2000 W/m·K), far surpassing silicon (~150 W/m·K) and even silicon carbide (~490 W/m·K).

    • This makes it ideal for heat dissipation in high-power and high-frequency devices.

  2. Wide Bandgap (~5.5 eV)

    • Its ultra-wide bandgap allows for:

      • High breakdown voltage

      • Operation at high temperatures

      • Low leakage currents

    • Suitable for power electronics, RF, and space applications.

  3. High Carrier Mobility (especially holes)

    • Offers high hole mobility (~3800 cm²/V·s), enabling faster switching and low power loss in devices like diodes and transistors.

  4. Radiation Hardness

    • High resistance to radiation damage makes diamond ideal for nuclear, military, and space electronics.

  5. High Dielectric Breakdown Field

    • Can withstand 10 MV/cm or more, allowing devices to operate at higher voltages.

  6. Mechanical Hardness

    • Excellent structural integrity for rugged environments and long-term durability.

❌ Disadvantages of Diamond Semiconductor Substrates

  1. High Cost

    • Synthetic diamond substrates are very expensive to produce, especially in large wafers.

    • High purity, single-crystal diamond is especially costly.

  2. Difficult Doping

    • Diamond is challenging to dope, especially n-type doping, which limits its application in full CMOS or logic circuits.

    • Achieving stable and efficient dopants is an ongoing materials challenge.

  3. Limited Wafer Size

    • Currently available diamond wafers are small (typically <1 inch) compared to silicon (12 inches) or SiC (6–8 inches).

    • This limits scalability and mass production.

  4. Processing Challenges

    • Standard semiconductor processing steps like etching, oxidation, and metallization are difficult or require specialized techniques.

    • Lack of mature fabrication infrastructure compared to Si or GaN.

  5. Lattice Mismatch for Heteroepitaxy

    • Difficult to grow other semiconductors (like GaN or SiC) on diamond due to lattice and thermal mismatch, limiting integration.

Summary Table

Property Diamond Impact on Devices
Thermal Conductivity ~2000 W/m·K Superior heat dissipation
Bandgap 5.5 eV High temp & high voltage operation
Hole Mobility ~3800 cm²/V·s Fast switching for p-type devices
Breakdown Field ~10 MV/cm High-power capability
Doping Hard (especially n-type) Limits versatility in device design
Wafer Size Small (<1") Not suited for mass production
Cost Very High Limits commercial viability

Key Applications

  • High-power RF amplifiers

  • High-voltage diodes and transistors

  • Space and radiation-hardened electronics

  • Emerging quantum devices (NV centers in diamond)

Property 🧪 Silicon (Si) 🔥 Silicon Carbide (SiC) ⚡ Gallium Nitride (GaN) 💎 Diamond
Bandgap (eV) 1.12 3.26 3.4 5.5
Thermal Conductivity (W/m·K) 150 490 130 2000
Electron Mobility (cm²/V·s) 1400 1000 1200 2200
Hole Mobility (cm²/V·s) 450 115 200 3800
Breakdown Field (MV/cm) 0.3 3 3.3 10
Wafer Size 300 mm (12") 150–200 mm 100–150 mm ≤25 mm
Doping Control Excellent Good Moderate Difficult
Cost Low High High Very High
Process Maturity Fully Mature Mature Growing Experimental
Typical Applications CMOS, MEMS, Power ICs EV, LED, Power Devices RF, Power Switching, LED High-Power, RF, Quantum