table { table-layout: auto; border-collapse: collapse; width: 100%; font-style: 9px; }
Ph (800)-713-9375

Monocrystalline and Polycrystalline Gallium Arsenide

Start Your Opto Elecronics Research Today!

Ask us a question! Immediate reply.

We have a NEW and large selection of Monocrystalline and Polycrystalline Gallium Arsenide Wafers in stock. Buy as few as One Wafer!

Monocrystalline Gallium Arsenide Inventory

UniversityWafer, Inc. and our partners grow mono and poly GaAs in PBN and High purity quartz crucibles. Ingots and wafers range from 50.8mm to 100mm. Other diameters are available upon request. Our GaAs substrates work great epitaxial processing and high-frequency and optoelectronic or (optronics) applications which is a sub-field of photonics applications.

The list below is much larger than what you see. Please fill out the form at the bottom and let us know if you want the excel file or the item that you are interested in for a quote.

Item Type Dia(mm) Thick (um) EPD Mobility CC Resistivity Orientation Surface Type Note
1F054 mono 50.8 370 5721 5073 2740 2375 (5,61-8,76)E17 4.86E-03 3.00E-03 2° →0-1-1;EJ lapped Si EJ
1F055 mono 50.8 620 24422 3814 3131 2189 2.32E+17 8.18E+17 8.51E-03 3.49E-03 100;US as cut/etched Si 15° towards to 011
1F055 mono 76.2 530 24422 3814 3131 2189 2,32E17      8,18E17 8.58E-03 3.49E-03 ;EJ lapped Si 10° towards to 111A
1F058 mono 76.2 560 ;EJ lapped Zn 2°towards to 110
1F062 mono 50.8 450 19082 21850 73 37 8,48E18-5,55E19 1.01E-02 4.13E-03 100 as cut/etched Zn 1 flat
1F1038 mono 50 350 100;EJ lapped Si
1F-1052 mono 100 740 7842 6388 5194 3808 2.18E+08 1.81E+08 100US lapped N 2°towards to 110
1F1058 mono 100 625 4869 5882 3185 2039 2.99E+17 8.03E+17 6.55E-03 3.82E-03 100; EJ polished Si
1F1058 mono 100 600 4869 5882 3185 2039 2.99E+17 8.03E+17 6.55E-03 3.82E-03 100; EJ polished Si
1F-1064 mono 100 640 29167 31945 166 89 4.70E+18 1.52E+19 8.03E-03 4.62E-03 111B as cut/etched Zn
1F-1064 mono 100 480 29167 31945 166 89 4.70E+18 1.52E+19 8.03E-03 4.62E-03 111B lapped Zn
1F-1064 mono 100 400 29167 31945 166 89 4.70E+18 1.52E+19 8.03E-03 4.62E-03 111B polished Zn
1F-1069 mono 50 300-320 100EJ lapped Si
1F533 mono 76.2 625 7166 6792 1.29E+08 1.28E+08 ;US polished undoped
1F-898 mono 76.2 810 3838 4174 2.30E+16 1.76E+17 6.99E-02 8.49E-03 100US lapped Te
1F-902 mono 76.2 850 3136 3922 1972 1.10E+18 2.88E-03 111A as cut/etched Si
1F-902 mono 76.2 625 3136 3922 1972 1.10E+18 2.88E-03 111A polished Si
2F022 mono 50.8 360 62000 500 2893 2057 (0,37-1,120E18 5.84E-03 2.71E-03 100;EJ polished Si
2F033 mono 50.8 430 9940 7600 3459 2288 8.40E+16 2.12E+17 2.17E-02 1.29E-02 100;EJ lapped Si
2F044 mono 76.2 530 7825 8949 99 151 3,75E18       4,62E18 1.67E-02 8.91E-03 100 lapped Zn 2°towards to 111 A
2F079 mono 100 540 2671 5.60E+17 4.20E-03 111; EJ polished Si
2F-1132 mono 25.4 450 100 polished N no flats
2F365 mono 50.8 430-440 7395 7800 267 232 7,24E16 - 2,81E17 3.20E-01 9.58E-02 100;US lapped Zn
2F365 mono 50.8 360 7395 7800 267 232 7,24E16 - 2,81E17 3.20E-01 9.58E-02 100;US polished Zn
2F366 mono 50.8 620 3546 3445 233 180 (2,3-8,03)E17 1.16E-01 4.01E-02 100EJ as cut/etched Zn 2°towards to 110
2F378 mono 50.8 520-530 12000 249 222 6,21E16 - 2,23E17 4.00E-01 1.25E-01 100;US lapped Zn
2F388 mono 50.8 570 25150 50000 6140 7052 7.50E+07 1.67E+07 EJ lapped undoped 4°towards to 110
2F777 mono 50.8 750 8931 11935 2467 1994 5,52E17-1,1E18 4.58E-03 2.66E-03 100;EJ as cut/etched Si
2F777 mono 50.8 560 2468 2304 5.52E+17 1.10E+18 4.58E-03 2.45E-03 100;EJ lapped Si
2F777 mono 50.8 520 8931 11935 2467 1994 5,52E17-1,1E18 4.58E-03 2.66E-03 100;EJ lapped Si
2F777 mono 76.2 515 8931 9840 2467 1994 5,52E17      1,17E18 4.58E-03 2.66E-03 100;US lapped Si
2F777 mono 76.2 450 8931 9840 2467 1994 5,52E17      1,17E18 4.58E-03 2.66E-03 100;US polished Si
2F870 mono 50.8 730 11890 14120 4446 2472 (5,4-6,8)E16 2.62E-02 3.74E-02 100EJ as cut/etched Si 0,8° towards to 110
2F870 mono 50.8 550 4446 2472 (5,4-6,8)E16 2.62E-02 3.74E-02 100EJ lapped Si 0,8° towards to 110
2F871 mono 50.8 700 10326 12989 2123 1784 (0,78-14,62)E17 3.01E-03 2.40E-03 100;EJ as cut/etched Si
3F023 mono 100 715-760 2.24E+05 1.10E+05 7189 7238 6.42E+07 3.03E+07 100;US lapped undoped 2°towards to 110
3F040 mono 76.2 470 9247 468 4024 2761 0,224E17    6,14E18 6.91E-02 3.69E-02 100; lapped Si 1 flat
3F051 mono 50.8 420 551 2207 2438 2074 (0,91-1,36)E18 2.82E-03 2.21E-03 100EJ lapped Si 2°towards to 110
3F051 mono 50.8 350 551 2207 2438 2074 9.10E+17 1.36E+18 2.82E-03 2.21E-03 100EJ polished Si 2°towards to 110
3F060 mono 76.2 750 17620 10449 107 34 4,09E18      2,88E19 1.41E-02 6.44E-03 ;EJ as cut/etched Zn 2°towards to 110
3F065 mono 50.8 620 8663 6687 2562 2181 (0,66-1,04)E18 3.73E-03 2.75E-03 100;EJ as cut/etched Si
3F068 mono 50.8 430 461 2635 2221 2125 9,4E17 - 1,34E18 2.98E-03 2.18E-03 2° →110;EJ lapped Si
3F-1017 mono 50.8 370 5464 5980 2345 2139 (1,04-1,11)E18 2.40E-03 2.82E-03 100; lapped Si 1 flat
3F-1034 mono 50 500 6239 6832 121 91 6.67E+18 1.53E+19 7.75E-03 4.51E-03 100EJ lapped Zn
3F105 mono 50.8 550 9930 10093 82 58 6,41E18 - 6,97E19 1.18E-02 4.90E-03 100;US as cut/etched Zn
3F105 mono 50.8 380 9930 10093 82 58 6,41E18 - 6,97E19 1.18E-02 4.90E-03 100;US lapped Zn
3F120 mono 50.8 350  O 351 435 (1-3,08)E17 2.40E-01 5.55E-02 100;EJ polished Zn
3F125 mono 50.8 440 21127 6010 7507 1.07E+08 1.22E+08 100EJ lapped undoped 0,5°towards  to 111
3F125 mono 50.8 375 21127 6010 7507 1.07E+08 1.22E+08 100EJ polished undoped 0,5°towards  to 111
3F214 mono 100 450 10600 13240 81 51 3,1E19         4,8E19  7.03E-03 2.94E-03 100;EJ polished Zn
3F296 mono 76.2 500  O 12000 16745 4847 79 8,15E16       3,68E16 1.58E-02 2.10E-02 100;EJ polished Si
3F313 mono 76.2 500 6900 4960 106 100 4,39E18      9,3E18 1.34E-02 6.74E-03 111B lapped Zn
3F316 mono 50.8 470 7430 8800 6200 7728 2.47E+07 2.07E+07 100US lapped undoped 3°towards to 011
3F316 mono 50.8 350  O 7430 8800 6200 7728 2.47E+07 2.07E+07 100US polished undoped 3°towards to 011
3F422 mono 50.8 520 9100 10642 6932 7200 2.31E+08 2.28E+08 100EJ lapped undoped 2°towards to 110
3F422 mono 50.8 400 9100 10642 6932 7200 2.31E+08 2.28E+08 100EJ polished undoped 2°towards to 110
3F543 mono 100 690 10000 14000 5416 5011 3.71E+08 5.31E+08 111B;EJ lapped undoped
3F543 mono 100 625 10000 14000 5416 5011 3.71E+08 5.31E+08 111B;EJ polished undoped
5F-48 mono 100 720-730 4155 5695 5978 5180 2.23E+08 1.61E+08 100US lapped N
5F-48 mono 100 625+/-25 O 4155 5695 5978 5180 2.23E+08 1.61E+08 100US polished N
5F-50 mono 50 280-300 4990 5190 1774 2769 3.13E+17 1.35E+18 2.62E-07 7.20E-07 100EJ lapped Si
6F15 mono 25 350  O 7222 7330 5502 4700 1.87E+08 2.67E+08 polished N
6F-15 mono 25 420 7222 7330 5502 4700 1.87E+08 2.67E+08 lapped N
6F19 mono 100 680 4380 4699 3229 1808 3,10E16      1,60E16 3.82E-02 1.32E-01 100; EJ lapped Si
6F19 mono 100 625 4380 4699 3229 1808 3,10E16      1,60E16 3.82E-02 1.32E-01 100; EJ polished Si
6F2 mono 76.2 625  O 12900 14765 5211 4429 2.24E+08 2.64E+08 100;EJ polished undoped
6F-21 mono 50.8 490 8070 7986 2116 1802 1.10E+17 2.43E+17 2.70E-02 1.43E-02 100EJ lapped Si
A1266 mono 50.8 730 71542 76500 162 62 2,99E18-1,95E19 1.28E-02 5.09E-03 100;EJ as cut/etched Zn
A-1266 mono 50.8 730 71547 76409 162 62 2.99E+18 1.95E+19 1.28E-02 5.09E-03 100EJ lapped Zn
A1289 mono 50.8 300 41997 59515 2707 2328 (1,13-1,34)E18 1.71E-03 2.36E-03 111B polished Si
A1315 mono 50.8 350  O 110090 99994 5155 608 7.00E+08 7.82E+08 111B polished undoped
A1462 mono 50.8 650 48900 56140 4885 2338 2,67E15-3,15E16 4.06E-02 2.07E-02 100;EJ as cut/etched Si
A1477 mono 50.8 480 63520 81100 137 109.6 3,5E18-1,08E19 1.00E-02 5.30E-03 111B lapped Zn
A1538 mono 76.2 920 110889 116956 5080 3834 3,16E16 -   1,7E17 3.90E-02 9.45E-03 100;EJ as cut/etched Te
A1538 mono 76.2 775 110889 116956 5080 3834 3,16E16 - 1,7E17 3.90E-02 9.45E-03 100;EJ polished Te
A1589 mono 50.8 490 59600 73000 100 88 4,9E18 - 1,15E19 1.26E-02 6.09E-03 111B lapped Zn
A-1646 mono 50.8 750 31480 52240 77 139 7.20E+18 7.70E+18 1.11E-02 5.80E-03 111B as cut/etched Zn
A-1646 mono 50.8 480 31480 52240 77 139 7.20E+18 7.70E+18 1.11E-02 5.80E-03 111B lapped Zn
A1656 mono 76.2 850 3648 9,8E16 - 4,38E17 3.90E+17 100;US lapped Te
A1656 mono 76.2 750  O 3648 9,8E16 - 4,38E17 3.90E+17 100;US polished Te
A1674 mono 76.2 970 5053 3778 1,42E16       8,90E16 8.65E-02 1.85E-02 100;US as cut/etched Te
A1674 mono 76.2 800 5053 3778 1,42E16       8,90E16 8.65E-02 1.85E-02 100;US lapped Te
A1674 mono 76.2 500 5053 3778 1,42E16       8,90E16 8.65E-02 1.85E-02 100;US polished Te
A1743 mono 50.8 770 110;EJ as cut/etched Zn
A1785 mono 76.2 750  O 100;US polished Te
A1793 mono 50.8 750 51200 79800 2865 1.86E+09 110;EJ as cut/etched undoped
A1793 mono 50.8 410 61900 78940 5100 2865 5.65E+08 1.86E+09 110;EJ lapped undoped
A1793 mono 50.8 580 51200 79800 2865 1.86E+09 110;EJ lapped undoped
A1793 mono 50.8 350 61900 78940 5100 2865 5.65E+08 1.86E+09 110;EJ polished undoped
A1837 mono 50.8 540 48790 52300 4010 3955 (2,27-2,31)E17 4.86E-03 6.84E-03 111B lapped Si
A-1837 mono 51.1 600 4010 3955 2.27E+17 2.31E+17 6.86E-03 6.84E-03 111B as cut/etched Si CW
A1986 mono 50.8 650 49166 79325 222 4.10E+06 211B polished undoped 45°
A250 mono 50.8 410-420 1.11E+05 4.50E+04 156 68 (1,22-8,92)E18 3.50E-04 1.02E-03 100;US lapped Zn
A276 mono 76.2 920 7.31E+04 1.41E+05 102 73 4,23E18        9,74E18 1.40E-04 8.76E-03 100 as cut/etched Zn 3°towards to 111 A
A282 mono 50.8 350 81374 163024 5860 5521 1.07E+08 2.06E+08 111 polished undoped
A293 mono 50.8 570 1.13E+05 7.81E+04 3290 2200 4,2E17 - 1,17E18 4.58E-03 2.51E-03 100;US lapped Si
A485 mono 76.2 640 62065 71444 5473 1.19E+08 111B; lapped undoped
A485 mono 76.2 575 62065 71444 5473 1.19E+08 111B; polished undoped
A801 mono 50.8 350;400 82000 5291 4789 4.06E+08 7.01E+08 111B polished undoped
A817 mono 76.2 690-715 84408 99719 6643 4631 1.80E+08 6.49E+08 111; lapped undoped
A817 mono 76.2 630 84408 99719 6643 4631 1.80E+08 6.49E+08 111; polished undoped
A819 mono 76.2 370 78063 93511 3368 3011 3,84E17       5,1E17 4.83E-03 4.06E-03 100;EJ polished Si
A-819 mono 76.2 400 78063 93511 3368 3011 3.84E+17 5.10E+17 4.83E-03 4.06E-03 100EJ polished Si
A-819 mono 76.2 400  O 78063 93511 3368 3011 3.84E+17 5.10E+17 4.83E-03 4.06E-03 100EJ polished Si
A918 mono 50.8 410 68445 130000 6778 4310 1.50E+08 7.15E+08 100;EJ lapped undoped
A918 mono 50.8 350 68445 130000 6778 4310 1.50E+08 7.15E+08 100;EJ polished undoped
O1083 mono 50.8 410 72823 83374 6375 2.19E+08 100;EJ lapped undoped
O1083 mono 50.8 350 72823 83374 6375 2.19E+08 100;EJ polished undoped
O1329 mono 50.8 410 55000 2575 2411 8,8E17 - 1,04E18 2.74E-03 2.47E-03 100;EJ lapped Si
O1375 mono 50.8 730 51642 64100 2154 1.22E+09 111A as cut/etched undoped
O1375 mono 50.8 560;430 64100 2154 1.22E+09 111A lapped undoped
O1375 mono 50.8 450 64100 2154 1.22E+09 111A polished undoped
O1384 mono 50.8 480;350 100        lapované lapped undoped 1 flat
O1391 mono 50 350 44823 49750 100 lapped Si 1 flat

 

Polycrystalline Gallium Arsenide Wafers

Please fill out the form below for an immediate qu ote. Additional fees to processing as cut/etched to lapped, etched, polished single and double side wafers.

Item Type Dia (mm) Thick (um) EPD Mobility CC Resistivity Orientation Surface Type Note
A-1554 poly 50.8 300 as cut/etched Zn poly
1F-1072 poly 50.8 500+/-25 as cut/etched Si
1F-1073 poly 50.8 670 as cut/etched Zn
1F-1073 poly 50.8 550 lapped Zn
1G-86 poly 50.8 660 as cut/etched N
1G-86 poly 50.8 560 lapped N
2F-742 poly 50.8 520 lapped Si
2F-880 poly 50.8 560 7 1406 1.12E+17 9.21E+17 8.39E-03 4.82E-03 as cut/etched Si poly
2F-880 poly 50.8 500 7 1406 1.12E+17 9.21E+17 8.39E-03 4.82E-03 polished Si poly

 

 

 

Gallium Arsenide Industry Growth

growth of the gallium arsenide industry

Typical Single GaAs Wafer Carrier

packaged gaas wafer

Contact Information

UniversityWafer, Inc. and our partners fill the need of high-quality silicon wafer, semiconductor wafers, substrate from Al2O3 to ZnO, that are epi-ready. Buy as few as one wafer to large volume. Our store is Open 24/7, Inc.

UniversityWafer, Inc.
11 Elkins St. Ste 330
South Boston, MA 0217

Phone: 800-713-9375
Fax: 888-832-0340

Fast Quote Form






We Also Buy & Sell Wafers & Semiconductor Equipment

University Wafer Silicon on LinkedIn university wafer on facebook get your wafers using universitywaferemail university wafer

Copyright UniversityWafer, Inc.