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What is the difference between Gallium Nitride Substrate vs Silicon?
This comparison outlines the key differences in material properties, device performance, and applications of Gallium Nitride and Silicon substrates.
Material Properties
| Property | Gallium Nitride (GaN) | Silicon (Si) |
|---|---|---|
| Bandgap | 3.4 eV (wide bandgap) | 1.1 eV |
| Breakdown Field | ~3 MV/cm | ~0.3 MV/cm |
| Thermal Conductivity | ~130 W/m·K | ~150 W/m·K |
| Electron Mobility | ~1,000 cm²/V·s | ~1,400 cm²/V·s |
| Saturation Electron Velocity | ~2.5×10⁷ cm/s | ~1×10⁷ cm/s |
| Substrate Cost | High | Low |
| Maturity | Newer, complex | Mature, well-established |
Performance & Device-Level Differences
| Feature | GaN Substrate | Silicon Substrate |
|---|---|---|
| Power Density | Much higher | Lower |
| Switching Speed | Faster | Slower |
| Efficiency | More efficient | Less efficient |
| Frequency Range | Excellent for RF and high-frequency | Good for low/mid-frequency |
| Heat Resistance | Excellent | Moderate |
| Device Size | Can be smaller | Typically larger |
| Leakage Current | Lower | Higher |
Application Areas
| Area | GaN Substrate | Silicon Substrate |
|---|---|---|
| Power Electronics | EVs, chargers, inverters | Traditional power ICs |
| RF/Microwave | Radar, 5G, satellite | Low-power RF |
| Optoelectronics | Blue/UV LEDs, laser diodes | Infrared photonics |
| Consumer Electronics | Fast chargers, audio amps | CPUs, general ICs |
Summary Table
| Factor | Gallium Nitride (GaN) | Silicon (Si) |
|---|---|---|
| Performance | Superior for high-power, high-frequency | Adequate for general use |
| Cost | High | Low |
| Maturity | Emerging | Established |
| Best Use | High-efficiency, compact devices | High-volume, low-cost chips |