Sapphire Substrates LED Sensors

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Fabricate Light Emmitting Diodes from Sapphire Wafers

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What Sapphire Substrate Specs are Used to Fabricate LED Sensors?

Sapphire substrates are widely used for fabricating LED sensors—particularly for blue, green, and UV LEDs—due to sapphire's excellent insulating properties, high thermal stability, and lattice compatibility with GaN (gallium nitride) and AlGaN materials. Below are the most common sapphire substrate specifications used for LED sensors:


Common Sapphire Substrate Specs for LED Sensors

Spec Category Typical Values / Notes
Material Single-crystal Al₂O₃ (sapphire)
Crystal Orientation C-plane (0001) most common; also A-plane (11-20), R-plane (1-102) for specific applications
Diameter 2" (50.8 mm), 3" (76.2 mm), 4" (100 mm), 6" (150 mm)
Thickness 430 µm – 650 µm (depending on diameter and equipment)
Surface Finish Double-side polished (DSP) for better epi growth; sometimes single-side polished (SSP)
Flatness < 10 µm TTV (total thickness variation) typical
BOW/Warp < 30 µm (for 2–4" wafers)
Miscut Angle ≤ 0.2° (to optimize GaN film growth and reduce defects)
Surface Roughness < 1 nm RMS on polished side
Edge Type Rounded or beveled to reduce wafer breakage in handling
Back Surface Sometimes roughened or grooved for stress relief
Epi-Ready? Yes, with cleaning and polishing processes suited for GaN/AlGaN deposition

🔬 Why Sapphire for LED Sensors?

  • Lattice compatibility with GaN epitaxial layers

  • High optical transparency in UV and visible range

  • Thermal and chemical stability under high-temperature MOCVD processes

  • Electrical insulation (acts as an excellent dielectric)

  • High mechanical strength


📌 Notes:

  • C-plane sapphire is the industry standard for GaN-based LED sensors due to its minimal lattice mismatch along the [0001] direction.

  • Patterned Sapphire Substrates (PSS) are also commonly used in high-efficiency LED sensors to enhance light extraction and reduce dislocation density.

    Here’s a comparison chart of sapphire vs other common substrates used in LED sensor fabrication, followed by a visual diagram request setup if you’d like it generated.


    Substrate Comparison for LED Sensors

    Property Sapphire (Al₂O₃) SiC (Silicon Carbide) GaN-on-Si (Gallium Nitride on Silicon) Bulk GaN
    Lattice Match with GaN ~13.9% mismatch ~3.4% mismatch ~16.0% mismatch Perfect
    Thermal Conductivity ~25 W/m·K ~370 W/m·K ~150 W/m·K (Si) ~130 W/m·K
    Electrical Conductivity Insulator Semiconductor Conductor Semiconductor
    Transparency (optical) Transparent (UV–IR) Opaque Opaque Transparent (limited)
    Cost Low High Moderate Very High
    Availability Widely available Moderate High Limited
    Substrate Size Up to 6" common Up to 4" Up to 8" ≤ 2–4"
    LED Efficiency Moderate to High High Moderate Highest
    Use Case Mainstream GaN-based LEDs High-performance LEDs Cost-effective mass production Research & high-end

    💡 Summary:

    • Sapphire is the most widely used due to availability, transparency, and thermal stability.

    • SiC is used in high-end applications due to better thermal and lattice matching.

    • GaN-on-Si is used in cost-sensitive, large-scale production but with higher defect rates.

    • Bulk GaN provides the best performance but is cost-prohibitive.

Comparison chart showing lattice mismatch versus thermal conductivity for sapphire, SiC, GaN-on-Si, and bulk GaN substrates used in LED sensors