🚗⚡ Drive the Future of EVs with UniversityWafer's 4H-SiC Substrates
Power your next-generation electric vehicle innovations with 
UniversityWafer, Inc.'s premium 4H Silicon Carbide (SiC) substrates—engineered for high-performance EV power electronics.
Our 4H-SiC wafers deliver:
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🔋 High Breakdown Voltage – Ideal for inverters, chargers, and DC-DC converters
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💡 Low On-Resistance – Boost efficiency and extend driving range
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🔥 Superior Thermal Conductivity – Operate reliably at high temperatures
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⚙️ Epitaxy-Ready Surfaces – Perfect for MOSFETs, Schottky diodes, and SiC modules
Whether you're building cutting-edge traction inverters or fast-charging systems, our research- and production-grade SiC substrates meet the demands of the electric vehicle industry.
🧪 Custom specs available. Fast turnaround. Worldwide delivery.
Get Your Quote FAST! Or Buy Online and Start Researching Today!
What Silicon Carbide Specs are Used in Electric Vehicle Power?
In electric vehicles (EVs), silicon carbide (SiC) is primarily used for power electronics, especially in inverters, DC-DC converters, and on-board chargers. These applications benefit from SiC's superior electrical and thermal properties compared to traditional silicon (Si) devices.
Here are the typical silicon carbide specs used in EV power applications:
🔌 1. Material Type
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4H-SiC (Hexagonal Polytype)
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Preferred for power devices due to high electron mobility and wide bandgap.
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Offers fast switching and high breakdown voltage.
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⚡ 2. Electrical Specs
| Parameter | Typical Spec Range | Function |
|---|---|---|
| Breakdown Voltage | 600 V to > 1700 V | Handles high-voltage drive systems |
| Current Rating | Up to several hundred amps | Supports high power transfer |
| Switching Frequency | Up to 100–500 kHz | Enables smaller passive components |
| On-resistance (R<sub>DS(on)</sub>) | Low (<100 mΩ typical) | Reduces conduction losses |
🌡️ 3. Thermal Properties
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Thermal Conductivity: ~3.7–4.9 W/cm·K (3x higher than Si)
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Operating Junction Temperature: Up to 175–200°C
This enables smaller heat sinks and higher power density in compact EV systems.
📏 4. Wafer Specs (for device manufacturing)
| Property | Spec |
|---|---|
| Diameter | 100 mm or 150 mm (200 mm emerging) |
| Type | N-type conductive |
| Orientation | <0001> (c-plane) |
| Doping | Nitrogen (n-type) |
| Resistivity | 0.015–0.03 Ω·cm (for epi-ready wafers) |
| Epitaxial Layer | Thickness: 10–100 μm Doping: 1e15–1e17 cm⁻³ |
⚙️ 5. Device Types in EVs
🚗 Why SiC is Used in EV Power Systems
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Higher efficiency → longer range per charge
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Reduced cooling requirements
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Compact size → lighter and more space-efficient
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Faster switching → supports fast charging systems
If you're sourcing wafers or designing SiC-based EV power modules, I can also provide recommended suppliers or sample wafer specs formatted for your catalog. Let me know!