What are the key differences between Si and SiC wafers?

Si wafers are mature, low cost, and ideal for CMOS, logic, memory, and sensors. SiC wafers feature a wide bandgap, higher breakdown field, and superior thermal conductivity—suited for high-voltage, high-power-density applications in EVs, renewables, and RF.

When should I use Silicon instead of Silicon Carbide?

Choose silicon for low-to-moderate voltage and temperature, high-volume ICs, sensors, and cost-sensitive projects where mature processing and low BOM cost are priorities.

When should I use Silicon Carbide instead of Silicon?

Use SiC for ≥650–1700 V power stages, thermally constrained or weight-critical systems, and applications requiring high efficiency, high switching frequency, and reduced cooling—like EV inverters, renewable energy, and industrial drives.

Silicon vs Silicon Carbide (SiC) Wafers — Performance, Cost & Applications

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Silicon vs. Silicon Carbide Wafers: Which Is Right for Your Application?

A practical, engineering-level comparison of material properties, device implications, costs, and use-cases—so you can spec the right wafer for power, RF, and research.

At a Glance

Silicon (Si): mature, low cost, superb for CMOS, logic, memory, sensors, and standard PV.
Silicon Carbide (SiC): wide bandgap; excels at high voltage, high temp, high power density (EV, renewables, industrial drives, RF/microwave).
Trade: Si is cheaper and easier to process; SiC is pricier but dramatically boosts efficiency and shrinks cooling requirements.

Core Material Properties

Property	Silicon (Si)	Silicon Carbide (4H-SiC)	Why it matters
Bandgap	~1.12 eV	~3.26 eV	Wider bandgap → lower leakage, higher temperature and voltage capability.
Breakdown field	~0.3 MV/cm	~3.0 MV/cm	Higher field allows thinner drift regions → lower RDS(on), higher efficiency.
Thermal conductivity	~150 W/m·K	~370 W/m·K	Better heat spreading; smaller, lighter cooling systems.
Max junction temperature	~150 °C typical	> 600 °C potential	Reliability under harsh thermal cycles & high-power transients.
Switching losses	Higher at HV/HF	Lower at HV/HF	Higher efficiency at same power; enables higher frequency (smaller magnetics).
Cost / availability	Low / very mature (up to 300 mm)	Higher / growing supply (100–150 mm; 200 mm ramping)	Si wins on cost; SiC wins on performance where it counts.

Device-Level Implications

Conduction & Switching Losses

For high voltage stages, SiC’s high breakdown field allows much thinner drift regions. That lowers RDS(on) and conduction loss at a given voltage rating. SiC MOSFETs and diodes also switch faster with lower Qg/Qrr, cutting switching losses and enabling higher switching frequencies (downsizing magnetics and filters).

Thermal & Packaging

SiC’s superior thermal conductivity and temperature capability reduce heatsink mass and expand your thermal budget. Systems can be smaller and lighter—key for EV traction inverters, aerospace power, and compact industrial drives.

Reliability & Operating Envelope

Elevated temperature operation and reduced derating improve design margins. Fewer parallel devices may be needed, easing layout complexity. Si remains excellent where junction temps are modest and voltages are low-to-mid range.

Manufacturing & Wafer Availability

Silicon: mature CZ/FZ supply chain, 2″–300 mm, abundant grades (logic, analog, MEMS, PV).
SiC: 4H-SiC is the power standard; 6H for niche; 3C is R&D. Today’s mainstream diameters are 100/150 mm with 200 mm scaling. Expect tighter defect specs and epi-ready surfaces (CMP to <1 nm RMS).
Metrology to request: AFM RMS, bow/warp/TTV, resistivity maps, lifetime (µ-PCD/PL), defect maps (micropipes, dislocations, BPDs).

Applications & Typical Choices

EV powertrain (traction, OBC, DC-DC): SiC preferred for efficiency, power density, and cooling reduction.
Renewables & grid (PV, wind, UPS): SiC shines at higher voltage and frequency; Si still fine for lower-power stages.
Industrial drives & robotics: SiC for compact, efficient variable-speed drives; Si for cost-sensitive, moderate specs.
RF/microwave & harsh environments: SiC excels in high-temp and high-power RF front-ends; Si covers low-power RF and mixed-signal control.
CMOS/logic/memory, consumer ICs: Silicon remains the universal platform.

How to Decide (Design Checklist)

Voltage class & power density: If ≥650–1200 V stages or severe thermal constraints → consider SiC.
Thermal budget: If heatsinks/fans are limiting, SiC’s thermal advantages can shrink cooling.
Switching frequency: If you want higher fsw to shrink magnetics, SiC’s lower switching losses help.
Cost vs lifetime/efficiency: Balance wafer/device cost against energy savings, size/weight, and service life.
Supply chain & fab fit: Confirm wafer sizes (100/150/200 mm), epi readiness, carriers/FOUP compatibility.

When to Choose Silicon

Low-to-moderate voltage and temperature requirements
High-volume CMOS/logic, analog, sensors, standard PV
Projects where lowest BOM cost dominates

When to Choose Silicon Carbide

High voltage (650–1700 V+) and high power density
Thermally constrained or space/weight-critical systems
Targets: peak efficiency, smaller passives, reduced cooling

Bottom Line

Use Silicon when cost and mature processing lead, and operating conditions are moderate. Choose Silicon Carbide when efficiency, voltage, temperature, and power density drive your design—especially for EV, renewable, and industrial power. If you’re unsure, we’ll match wafers to your toolset and target device.

Request a quote or tell us your specs (diameter, thickness, dopant, resistivity, off-axis, epi) and we’ll recommend stock that fits your flow.

Silicon Carbide vs Silicon Wafer Performance/Price