We need 2-inch Indium Antimonide wafers for the fabrication of high-performance semiconductor devices.
Specification:
InSb (100), 2" diameter × 0.5 mm thickness,
Undoped, N-Type, Single-Side Polished (SSP), Quantity: 10 wafers.
Indium Antimonide (InSb) Wafers for High-Performance Semiconductor Devices
Indium Antimonide (InSb) wafers are widely used in advanced semiconductor research, infrared detector development, Hall effect sensors, magnetoresistive devices, and high-speed electronic components. Thanks to their extremely high electron mobility and narrow bandgap, InSb substrates are ideal for applications requiring fast carrier transport and exceptional infrared sensitivity.
A PhD candidate recently contacted UniversityWafer regarding the following requirement:
UniversityWafer Quoted:
Item HR88b
Prime Grade Indium Antimonide Wafers
2" Diameter × 500 ±25 µm Thickness
n-Type Undoped InSb (100) ±0.5°
Carrier Concentration < 1 × 1015/cm³
Single-Side Polished (SSP)
Backside Matte Etched
Packaged Under Nitrogen in Individual Wafer Cassettes
Reference #274323 for pricing, availability, and custom specifications.
Epitaxy-Ready Indium Antimonide Wafers
UniversityWafer supplies epitaxy-ready InSb wafers grown using the Czochralski crystal growth process. High-purity single crystals are produced from zone-refined polycrystalline feedstock, resulting in exceptional crystal quality suitable for epitaxial growth, infrared detector fabrication, and semiconductor device research.
Our InSb substrates are available in multiple orientations, doping levels, thicknesses, and surface finishes to support university research, government laboratories, and commercial semiconductor development programs.
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Available Indium Antimonide Wafer Specifications
UniversityWafer maintains inventory of numerous Indium Antimonide wafer configurations including:
- InSb (100) Te-Doped N-Type SSP Wafers
- InSb (100) Ge-Doped P-Type SSP Wafers
- InSb (100) Undoped DSP Wafers
- InSb (100) Undoped SSP Wafers
- InSb (111) Te-Doped N-Type DSP Wafers
- InSb (111) Te-Doped N-Type SSP Wafers
- Epitaxy-Ready InSb Substrates
- Research-Grade and Prime-Grade InSb Wafers
Available wafer sizes include diced substrates, 5 mm × 5 mm samples, 10 mm × 10 mm samples, and full 2-inch diameter wafers. Custom specifications are available upon request.
Applications of Indium Antimonide Wafers
Because of their high electron mobility and excellent infrared response, InSb wafers are commonly used in:
- Mid-Wave Infrared (MWIR) Detectors
- Infrared Imaging Systems
- Thermal Cameras
- Hall Effect Sensors
- Magnetoresistive Sensors
- Terahertz Electronics
- Quantum Device Research
- High-Speed Semiconductor Devices
- Space and Defense Applications
- Optoelectronic Components
Indium Antimonide remains one of the most important semiconductor materials for infrared sensing and advanced electronic devices because it combines exceptional carrier mobility with outstanding infrared detection capabilities.
What Is an Indium Antimonide (InSb) Detector?
An Indium Antimonide (InSb) detector is a high-performance infrared detector manufactured from indium antimonide, a III-V compound semiconductor known for its exceptional electron mobility and sensitivity to mid-wave infrared (MWIR) radiation. InSb detectors are commonly used in thermal imaging systems, spectroscopy equipment, missile guidance systems, astronomy, environmental monitoring, and scientific research.
Due to its narrow bandgap of approximately 0.17 eV at room temperature, InSb efficiently detects infrared wavelengths between 1 µm and 5.5 µm, making it one of the most widely used materials for MWIR detector applications.
Key Characteristics of InSb Detectors
- Mid-Wave Infrared Sensitivity: Excellent detection performance within the 1–5.5 µm spectral range.
- High Electron Mobility: One of the highest electron mobilities among semiconductor materials, enabling fast response times.
- Low Noise Performance: Often operated at cryogenic temperatures to maximize signal-to-noise ratio.
- High Quantum Efficiency: Converts incoming infrared radiation into measurable electrical signals with excellent sensitivity.
- Fast Detection Speed: Ideal for high-speed imaging and tracking applications.
Applications of InSb Infrared Detectors
- Thermal imaging cameras
- Military targeting and missile guidance systems
- Gas sensing and environmental monitoring
- Fourier Transform Infrared Spectroscopy (FTIR)
- Astronomy and space-based imaging
- Medical diagnostic imaging
- Industrial process monitoring
What Is Indium Antimonide (InSb)?
Indium Antimonide (InSb) is a III-V compound semiconductor composed of indium and antimony. It is widely recognized for its extremely high electron mobility, low effective electron mass, and narrow bandgap, making it a preferred material for infrared detectors, Hall effect sensors, magnetoresistive devices, and high-speed electronic components.
Single-crystal InSb wafers are typically grown using advanced crystal-growth techniques such as the Czochralski process, producing high-quality substrates suitable for semiconductor research, epitaxial growth, and device fabrication.
Physical Properties of InSb
- Chemical Formula: InSb
- Crystal Structure: Zinc Blende
- Bandgap: Approximately 0.17 eV
- Electron Mobility: Up to 78,000 cm²/V·s at room temperature
- Infrared Response: 1–5.5 µm wavelength range
- Melting Point: Approximately 527°C
Why Researchers Use InSb Wafers
Researchers select Indium Antimonide wafers because they offer superior carrier transport properties compared to many conventional semiconductor materials. The combination of high electron mobility and narrow bandgap allows InSb-based devices to operate efficiently in applications requiring rapid signal processing and infrared sensitivity.
InSb substrates are frequently used for:
- Infrared focal plane arrays (FPAs)
- Hall effect sensors
- Magnetic field sensors
- Terahertz electronics
- Quantum computing research
- Nanowire and nanostructure development
- High-speed transistor research
Indium Antimonide in Advanced Semiconductor Devices
The exceptional electron mobility of InSb has attracted significant attention from semiconductor manufacturers developing next-generation electronic devices. Researchers continue investigating InSb for high-frequency transistors, quantum devices, spintronics, and advanced optoelectronic systems.
Because InSb supports extremely rapid electron transport, it remains one of the most promising semiconductor materials for future low-power, high-speed electronics and infrared sensing technologies.
Available InSb Wafer Configurations
UniversityWafer supplies Indium Antimonide wafers in a variety of orientations, diameters, doping levels, and surface finishes including:
- InSb (100) wafers
- InSb (111) wafers
- Undoped InSb substrates
- Tellurium-doped (N-type) InSb
- Germanium-doped (P-type) InSb
- Single-Side Polished (SSP)
- Double-Side Polished (DSP)
- Epitaxy-Ready InSb wafers
Custom specifications are available for semiconductor device fabrication, infrared detector development, and university research programs.