Thermal Oxide Silicon Wafers 

Thermal oxide silicon wafers feature a precisely grown layer of silicon dioxide (SiO2) that provides excellent electrical insulation, surface passivation, and dielectric performance. UniversityWafer supplies wet and dry thermal oxide wafers with custom oxide thicknesses, wafer diameters, crystal orientations, and dopant options for MEMS, CMOS, photolithography, wafer bonding, and advanced semiconductor research.

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UniversityWafer supplies high-quality thermal oxide silicon wafers for semiconductor fabrication, MEMS, photonics, microelectronics, and advanced materials research. Whether you require wet thermal oxide, dry thermal oxide, or a custom silicon dioxide (SiO2) layer, our engineers can help you select the right wafer for your application.

We offer thermal oxide wafers in a wide range of diameters, crystal orientations, oxide thicknesses, dopant types, resistivities, and surface finishes. Standard inventory and custom specifications are available for both prototype and production quantities.

Recent Research Inquiry

"Our research group is fabricating MEMS pressure sensors and requires 100 mm silicon wafers with a 1 µm dry thermal oxide layer, (100) orientation, single-side polished, and low particle density. Could you provide pricing, availability, and lead time for an initial prototype order?"

Custom Thermal Oxide Wafer Options

  • Wet and dry thermal oxide growth
  • Custom SiO2 thicknesses from thin gate oxides to thick dielectric layers
  • 2", 3", 4", 6", 8", and 12" wafer diameters
  • (100), (111), and custom crystal orientations
  • N-type, P-type, and intrinsic silicon substrates
  • Prime, test, and research grades
  • Single-side polished (SSP) and double-side polished (DSP)
  • Prototype through high-volume production quantities

Complete the quote request form with your desired wafer diameter, oxide thickness, crystal orientation, resistivity, polish, and quantity. Our technical team will respond quickly with pricing and recommendations for your thermal oxide wafer project.

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What Are Thermal Oxide Silicon Wafers?

Thermal oxide silicon wafers are silicon substrates coated with a layer of high-quality silicon dioxide (SiO2) grown through thermal oxidation. This process produces an electrically insulating oxide with excellent interface quality, making thermal oxide wafers an essential material for semiconductor manufacturing, MEMS devices, microelectronics, photonics, biosensors, and advanced materials research.

Depending on the application, the oxide layer can be grown using either dry oxidation or wet oxidation, each offering distinct advantages in oxide quality, growth rate, and electrical performance.

Thermal oxide silicon wafer showing silicon dioxide layer and semiconductor applications

Wet vs. Dry Thermal Oxide

Process Characteristics Typical Applications
Dry Thermal Oxide Dense, high-quality SiO2 with excellent electrical properties and precise thickness control. Gate oxides, MOS devices, CMOS fabrication, dielectric layers.
Wet Thermal Oxide Faster oxide growth for thicker films with excellent insulation properties. MEMS, field oxides, diffusion masking, surface passivation.

Applications of Thermal Oxide Wafers

Because thermal oxide provides outstanding electrical insulation and chemical stability, these wafers are widely used throughout the semiconductor industry and research laboratories.

  • CMOS and MOSFET fabrication
  • MEMS sensors and actuators
  • Photolithography masking layers
  • Wafer bonding processes
  • Microfluidic and biosensor devices
  • Thin-film deposition substrates
  • Graphene and other 2D material research
  • Photonic integrated circuits
  • Dielectric isolation layers
  • University and government laboratory research

Available Thermal Oxide Wafer Specifications

UniversityWafer supplies thermal oxide silicon wafers with customizable specifications to support both research and commercial manufacturing. Standard and custom options include:

  • 2", 3", 4", 6", 8", and 12" wafer diameters
  • Custom oxide thicknesses from thin gate oxides to thick dielectric layers
  • (100), (111), and custom crystal orientations
  • N-type, P-type, and intrinsic silicon substrates
  • Prime, test, and research grades
  • Single-side polished (SSP) and double-side polished (DSP)
  • Low particle, low TTV, and high-flatness options
  • Prototype through production quantities

Custom Thermal Oxide Solutions

Whether you require ultra-thin gate oxides for advanced semiconductor devices or thick oxide layers for MEMS fabrication and dielectric isolation, UniversityWafer can provide custom thermal oxide wafers manufactured to your exact specifications. Our engineering team supports universities, research institutes, and semiconductor manufacturers with high-quality wafers designed to meet demanding process and performance requirements.

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