GaN High Mobility Electron Transistor (HEMT) on Silicon

university wafer substrates

HEMT Substrates for RF Devices

A postdoc requsted a quote for their Radio Frequency Device research:

I work on Gallium Nitride-based RF devices. Could you please provide me with the quotation for the following:

  1. 4 inch 2 nos. AlGaN/GaN HEMT on undoped Sapphire (with Specifications like Sheet resistance, stack details, etc.)
  2. 6-inch 2nos. AlGaN/GaN HEMT on undoped Sapphire (with Specifications like Sheet resistance, stack details, etc.)
  3. 6inch 2nos. Undoped Sapphire Wafer (with specifications, thickness, resistivity, etc...) 

Reference #272024 for specs and pricing.

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Why HEMTs on Silicon wafers?

One word, cost! Silicon is a ubiquitous material used for all semiconductor purposes and easy to work with.

HEMT Structure on Silicon Wafer

high-electron mobility transistor(HEMT)  structure on silicon wafer

Specification of HEMT on Si

Parameter Nominal value
Thickness of GaN Cap Layer 3 nm
AlGaN compostion(%Al) 26%
AlGaN thickness (nm) 25 nm
AlN thickness 1 nm
Thickness of GaN (um) 2 um
Thickness of buffer layer (um) ~ 1 um
Thickness of Si(111) substrate (um) 700 um or 1500 um (for 2inch Si substrate)

Sheet resistivity (ohms/sq)
Mobility (cm2/V-sec) >1300 for Si substrate
Sheet concentration (/cm³) ~ 1 e 13
Bow <60um



GaN High-Electron Mobility Transistors (HEMT) on Silicon

Below is just one example of what we carry.


Silicon High Electron Mobility Transistor Research

An interdisciplinary group of lecturers at the IISc has developed a new high-performance electronic transport system, the performance of which is comparable to the best reports to date. An interdisciplinary research team from the University of California, San Francisco (UCSF) and the Institute of Electrical and Computer Engineers (IECE) has developed an advanced electronic transport system for which no comparable good report has been published - on performance. [Sources: 1, 5]

To improve the electrostatic control of the driven current, the researchers based in Switzerland and China produced fluorinated GaN metal oxides, a type of high-performance silicon high-electron mobility transport system (HEMTS). [Sources: 4, 8]

GaN substrates were grown in a high-pressure, high-pressure, low-pressure environment. [Sources: 4, 12, 13]

The high-mobility transistors are based on the Lombardi mobility model, which is used in the construction of high-mobility semiconductors such as silicon high-electrons and semiconductor silicon gallium nitride. [Sources: 4, 13]

The current collapse phenomenon is caused by dropping - the induced capture of high-power semiconductors in the semiconductor silicon gallium nitride (SGN). [Sources: 4, 13]

Compact MMIC components are made from pseudomorphic semiconductors, in which the semiconductor silicon gallium nitride (SGN) is mounted in a niche. During the current collapse, the gates and recesses are riddled with a small number of pseudomorphs growing on the surface of the gate - recesses in the form of a thin layer of silicon germanium oxide. [Sources: 12, 14, 15]

The team at IISc has developed a powerful, low-noise, fast and compact MMIC that operates at 600 V. The hard work over two years has paid off and they have successfully developed an ultra-powerful and low-noise microphone that can operate at up to 600V with a power consumption of less than 10 watts. [Sources: 1, 5]

The CMPA601C025D is a GIN-1 EMT-based integrated circuit with 0.5 nm high electron mobility transistors and a metal T-gate that can be used for high-speed trains (see FIG). The semiconductor device (400 nm) belongs to a group of semiconductors consisting of high-power transistors (HemT) that form the basis for an energy-saving, low-power, low-noise microphone. [Sources: 9, 15]

The High Electron Mobility Transistor (HEMT) has two conductive channels with two connectors, known as source and outlet, and a third, the gate. The power channel is controlled by the gate and the current flowing through the gate is controlled by a metallic T-gate and a high-power transistor. High electron mobility transistors, HemT has a duct and two drain channels, a source channel and a gate channel. The current in both channels is controlled by a gate called the "gate" which controls the voltage in the second channel and the current flow through the third channel. [Sources: 1, 5]

In certain cases, the High-Electron-Mobility-Transistor (HEMT) is also called a field effect transistor, which is doped by modulation by the field effect of the transistor. The Silvaco Atlas Sentauraus SDevice is used to model the performance of transistors because it is robust. In particular, AlGaN - based electron mobility transistors and power amplifiers based on Al GaN and High HemT - have become the basis for the development of high-frequency microwave and low-power transistors. In very demanding high-frequency microwave applications where power is crucial, such as high power and very low power, H EMT itself is often used as a power amplifier. [Sources: 6, 7, 10, 11]

This strategy was developed by Takashi Mimura in collaboration with colleagues from the University of California, Berkeley, who developed the gallium transistors for high electron mobility, for which the Kyoto Prize was awarded in 2017. In addition to his research in the Silvaco Atlas Sentauraus SDevice, Mimuras is also involved in high-electron mobility transistor technology. [Sources: 3, 16]

Compared to silicon power transistors, gallium nitride (Hemt) is characterized by high electron mobility and high energy efficiency, as required in the field of microwave communication (RF). In addition, GaN can withstand electric fields up to fifteen times stronger than silicon, and electrons can move much faster than in silicon - allowing for faster switching. Transistors have evolved and are urgently evolving, especially in areas such as microwave communications and RF technology, where high-speed, low-power, high-speed, electron and mobility technologies are needed. [Sources: 0, 2, 16]

The induced transistors of high electron mobility offer a coordinated different electron density by means of HEMT - doped modulation - by inducing charge carriers in the 2deg plane and producing doping around them. The embodiment is based on the fact that the electron density of a high-electron mobility transistor can be adjusted depending on a number of factors, such as charge - carrier density, frequency of modulation and voltage. [Sources: 6, 16]