Get Your Quote FAST!
|Thickness of GaN buffer(um)||1.8± 0.25μm|
|AlGaN compostion(%Al)||20, 23 or 26± 1.25%|
|AlGaN thickness (nm)||21±1nm|
|Sheet resistivity (ohms/sq)||<420 ohms/sq|
|Mobility (cm2/V-sec)||>1200 cm2/V-sec|
|Sheet concentration (/cm3)||>1e13/cm3|
|Buffer layer resistivity (ohms/sq)||>1e5ohms/sq|
|Substrate resistivity (ohms/sq)||>10,000ohms/sq|
|particulates or other defects||90.00%|
Gallium Nitride HEMTs have high gain which are great as amplifiers for swiching at high speeds. HEMTs are field-effect transistors. The junction between two different band gap materials (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET).
HEMT transistors performance at higher frequency. They are able to operate at higher frequencies than traditional transistors.
Uses in high-frequency products inlcude: