GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide

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High Electron Mobility Transistors (HEMT) grown on Silicon Carbide (SiC) Wafers

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HEMT on SiC
Substrate SiC

Thickness of GaN buffer(um)
1.8± 0.25μm
AlGaN compostion(%Al) 20, 23 or 26± 1.25%
AlGaN thickness (nm) 21±1nm
AlN thickness 1±0.5nm
Sheet resistivity (ohms/sq) <420 ohms/sq
Mobility (cm2/V-sec) >1200 cm2/V-sec
Sheet concentration (/cm3) >1e13/cm3
Bow <60um
Buffer layer resistivity (ohms/sq) >1e5ohms/sq
Substrate resistivity (ohms/sq) >10000ohms/sq
particulates or other defects 90.00%


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