Request a Quote for Silicon on Sapphire (SOS) Wafers
UniversityWafer supplies high-quality Silicon on Sapphire (SOS) wafers for RF electronics, MEMS, photonics, CMOS, aerospace, and radiation-hardened semiconductor applications. We can manufacture custom SOS substrates with your required sapphire orientation, silicon epitaxial layer thickness, resistivity, wafer diameter, and surface finish.
Whether you need prototype quantities or volume production, simply provide your specifications below for a fast quotation. Most quote requests receive a prompt response from our technical sales team.
Need sapphire substrates? Buy sapphire wafers online or contact us for custom specifications and bulk pricing.
Sapphire Wafers Also Available
Looking for sapphire wafers instead of Silicon on Sapphire? UniversityWafer stocks a large inventory of monocrystalline sapphire substrates in diameters up to 200 mm and thicknesses as thin as 100 µm. Sapphire wafers are commonly used for LED manufacturing, GaN epitaxy, optics, photonics, RF devices, and semiconductor research.
Silicon on Sapphire (SOS) Wafers
Silicon on Sapphire (SOS) wafers combine a high-quality silicon epitaxial layer with a monocrystalline sapphire substrate to provide excellent electrical isolation, high-frequency performance, and thermal stability. SOS technology is widely used for RF integrated circuits, CMOS devices, MEMS, radiation-hardened electronics, aerospace systems, photonics, and high-speed communication devices.
UniversityWafer supplies custom silicon on sapphire substrates manufactured to your specifications. Whether you require prototype quantities or production volumes, we can provide custom wafer diameters, sapphire orientations, silicon epitaxial thicknesses, resistivities, and polishing options.
Typical SOS Wafer Specifications
Sapphire Substrate
- Material: 99.996% high-purity monocrystalline Al2O3
- Orientation: R-Plane (1-102)
- Off-Cut: ±0.5°
- Diameter: 100 ±0.1 mm
- Thickness: 460 ±20 µm
- Primary Flat: 32.5 ±2.5 mm at 45° from C on R
- Front Surface: EPI-ready polish (Ra ≤0.3 nm)
- Back Surface: Lapped finish (Ra 0.6 ±0.2 µm)
- Bow: ≤20 µm
- TTV: ≤15 µm
- Warp: ≤20 µm
- Flatness (TIR): ≤12 µm
- Edge Exclusion: 3 mm
- Laser Marking: None
- Packaging: Argon vacuum packed in a Class 100 cleanroom
- Metallic Contamination: <5 × 1010 atoms/cm² (Ca, Na, K, Cr, Zn, Fe, Cu, Ni)
- LPD: ≤40 particles ≥0.2 µm
Silicon Epitaxial Layer
- Crystal Orientation: Silicon (100)
- Epitaxial Thickness: 600 ±60 nm
- Resistivity: ≥100 Ω-cm (Undoped)
- Crystal Quality: SEMI M4 compliant
- Particle Density: <2 particles/cm² (>2 µm)
Typical Applications
- RF and microwave integrated circuits
- Radiation-hardened electronics
- MEMS sensors and actuators
- CMOS integrated circuits
- Photonics and optoelectronics
- High-speed communication devices
- Aerospace and defense electronics
- Research and semiconductor process development
Need a different wafer size or silicon epitaxial thickness? UniversityWafer can provide custom silicon on sapphire wafers to match your exact device requirements. Contact us today for pricing and availability.