Substrates for Optoelectronics Devices 

Optoelectronics Overview

Optoelectronic devices convert between electrical signals and light. Their performance depends strongly on the substrate: lattice match for low-defect epitaxy, optical loss for waveguides, and thermal/mechanical stability for packaging. UniversityWafer supplies epi-ready and optical-grade wafers for LEDs, laser diodes, photodetectors, optical modulators, and integrated photonics, covering III–V, II–VI, Si/SOI, LiNbO₃, and sapphire platforms.

Emitter Platforms (LEDs & Lasers)

• GaN family (on sapphire/SiC/Si): blue–UV LEDs & LDs; high thermal stability and mature MOCVD flows.
• GaAs family (AlGaAs/InGaAsP): 630–980 nm LEDs/LDs, VCSELs, pump diodes, and photonic integration.
• InP family (InGaAsP/InAlGaAs): 1.3–1.55 µm datacom/telecom lasers, DFB/DBR, tunable and coherent sources.
• II–VI (ZnSe/ZnS/ZnTe): nonlinear/THz generation, specialty mid-IR emitters and optics.

Choosing the right substrate minimizes misfit dislocations, improves lifetime, and enables precise band engineering for quantum wells and superlattices.

Detector Platforms

• InGaAs on InP: 0.9–1.7 µm high-speed photodiodes/APDs for LiDAR and fiber links.
• GaAs/AlGaAs: visible/near-IR PINs, avalanche photodiodes, and time-of-flight sensors.
• II–VI (CdS/CdSe/ZnSe): mid-IR/VIS detection, acousto-optic devices, and windows.
• Si/SOI: visible photodiodes, CMOS imagers, integrated Ge-on-Si for extended response.

Low-dark-current junctions rely on defect-suppressed epitaxy, optimized doping, and smooth, contamination-controlled surfaces.

Waveguides, Modulators & Photonics

• SOI Photonics: low-loss Si waveguides for datacom, sensing, and PICs; supports grating couplers and MZI meshes.
• LiNbO₃: electro-optic modulators (x/z-cut), thin-film LNOI for ultra-low-V_π and wide bandwidth.
• GaAs/InP PICs: monolithic integration of lasers, SOAs, modulators, and detectors.
• Sapphire & Quartz: low-loss, high-damage-threshold optics and RF/EO hybrids.

Substrate choice sets index contrast, EO response, propagation loss, and thermal handling—key to compact, high-yield photonic circuits.

Available Specifications

• Diameters: 2″–6″ typical (Si/SOI up to 8″); custom sizes on request.
• Orientations: (100)/(111) for Si/GaAs; (100) for InP; c-/a-/r-/m-plane for sapphire; x-/z-cut for LiNbO₃.
• Doping: n/p/undoped; target resistivity and epi layer stacks per spec.
• Finish: SSP/DSP, epi-ready polish, flats/notch per SEMI; bow/warp/roughness controlled.

Epi-ready wafers are delivered cleanroom-sealed, particle-screened, and compatible with MBE/MOCVD/CVD flows.

Surface Preparation & Coatings

• Epi-ready: low-RMS roughness for uniform nucleation and high-yield heterostructures.
• Optical: AR/HR/dielectric stacks for target bands (VIS, NIR, SWIR, MWIR, LWIR).
• Metallization: adhesion/barrier options (Ti/Pt/Au, TiW, Ni/Au) and lift-off/etch compatibility.

Optional miscut angles are available to promote step-flow growth and suppress hillocks in demanding epitaxy.

Integration & Packaging Considerations

• Thermal: choose substrates with suitable conductivity/CTE for high-power emitters and modulators.
• Electrical: optimize sheet/contact resistance with substrate doping and metal stacks.
• Optical: manage mode size, coupling interfaces, and coating durability for target wavelengths.

Early substrate selection reduces downstream rework and accelerates device qualification and yield ramp.

Ordering Checklist

• Material platform and orientation (GaN/GaAs/InP/Si/SOI/LiNbO₃/sapphire/II–VI).
• Diameter, thickness, flats/notch, and bow/warp limits.
• Doping type/resistivity and any required epi stacks or buffer templates.
• Surface finish (SSP/DSP, epi-ready) and coating/metal needs.
• Quantity, packaging, and inspection standard (CoC, metrology reports).

Get a Fast Quote

Tell us your wavelength band, device type, and process flow. We’ll recommend a substrate and finish that balance loss, lattice match, thermal handling, and cost. Request a Quote →