The researcher needed a basic InGaAs wafer for experimental thermophotovoltaic research. The proposed system used a separate absorber-emitter structure to convert an incoming heat source into near-infrared radiation for conversion by the photovoltaic device.
InGaAs Wafers and Substrates for Research
UniversityWafer supplies Indium Gallium Arsenide (InGaAs) wafers, substrates, epitaxial materials, films, and wafer pieces for semiconductor, photonics, infrared, and materials-science research. InGaAs is a III-V compound semiconductor whose electronic and optical properties can be tailored by adjusting the indium and gallium composition.
Researchers use InGaAs materials for applications including photodetectors, infrared imaging, spectroscopy, optical communications, photonics, high-speed electronics, photovoltaics, and material characterization. Available material requirements may include specific alloy compositions, substrate materials, doping levels, epitaxial structures, layer thicknesses, and sample dimensions.
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InGaAs for Thermophotovoltaic Research
The tunable bandgap of InGaAs makes the material useful for photovoltaic and thermophotovoltaic (TPV) research. In a TPV system, thermal radiation can be converted into photons within a wavelength range that can be absorbed by a photovoltaic cell and converted into electrical power.
Researchers can investigate different InGaAs compositions and device structures to match the absorber response to the spectral output of an emitter.
A solar-cell researcher requested the following InGaAs material:
Reference #263615 for specifications and pricing.
InGaAs for Photoluminescence Measurements
InGaAs is also useful for photoluminescence (PL) characterization, where researchers study optical emission to investigate semiconductor band structure, composition, material quality, strain, and temperature-dependent behavior.
Because the bandgap of InGaAs changes with alloy composition, samples with known indium and gallium concentrations can be useful for experiments comparing optical properties across different compositions and temperatures.
A senior applications scientist requested:
Small III-V semiconductor wafer pieces with a bandgap near 0.8 eV for temperature-dependent photoluminescence measurements from room temperature down to approximately 10 K.
The researcher wanted two or three materials with slightly different but known compositions and identified standard and strained InGaAs as possible materials. Broken wafer pieces or research samples were acceptable as long as the composition was known.
Reference #91295 for specifications and pricing.
InGaAs Films and Heterogeneous Integration
Researchers may also investigate InGaAs films integrated with other semiconductor substrates. Combining III-V materials with silicon is of interest for advanced photonics, optoelectronics, detectors, and heterogeneous semiconductor integration.
Material selection for these experiments depends on the required composition, target bandgap, film thickness, substrate, interface quality, and intended characterization or device process.
A corporate scientist requested:
InGaAs material or an InGaAs film on silicon for calibration of a photoluminescence spectrometer. The researcher was interested in a test sample with a target bandgap near 0.6 eV and noted that a small sample rather than a complete wafer could be suitable.
Reference #223119 for specifications and pricing.
What InGaAs Specifications Should You Provide?
InGaAs requirements can vary significantly between experiments. When requesting material, provide as much information as possible about your intended application and desired specifications.
- Alloy composition: desired indium and gallium fraction, if known.
- Substrate: InP, silicon, or another required substrate material.
- Sample size: full wafer, diced sample, or small research piece.
- Layer thickness: required InGaAs or epitaxial-layer thickness.
- Doping: N-type, P-type, undoped, or required carrier concentration.
- Crystal orientation: specify the required orientation when applicable.
- Bandgap or wavelength: provide the target optical response if relevant.
- Layer structure: describe any InGaAs/InP or other heterostructure requirements.
- Quantity: number of wafers, pieces, or samples required.
If you are unsure which specifications are appropriate, describe your experiment, fabrication process, or target device when requesting a quote. This information can help identify an appropriate InGaAs wafer or substrate for your research.
What Is Indium Gallium Arsenide (InGaAs)?
Indium Gallium Arsenide (InGaAs) is a ternary III-V compound semiconductor composed of indium, gallium, and arsenic. Its composition is commonly written as InxGa1-xAs, where the relative amount of indium and gallium can be adjusted to tune important electronic and optical properties.
InGaAs is valued for its direct bandgap, high electron mobility, and strong response to near-infrared light. These properties make it useful in photodetectors, high-speed electronics, optical communication systems, spectroscopy, imaging, and advanced semiconductor research.
UniversityWafer supplies InGaAs wafers, substrates, epitaxial structures, films, and research materials for device development, university laboratories, and semiconductor R&D.
Why Is InGaAs Important?
One of the key advantages of InGaAs is that its properties can be engineered by changing its alloy composition. Adjusting the indium-to-gallium ratio changes properties such as the bandgap and lattice constant, allowing researchers to optimize the material for specific electronic and optoelectronic devices.
- Direct bandgap: supports efficient absorption and emission of light.
- High electron mobility: useful for high-speed and high-frequency electronic devices.
- Near-infrared response: important for detectors, cameras, spectroscopy, and communications.
- Composition tunability: allows the optical and electronic properties to be engineered.
- III-V compatibility: supports heterostructures with materials such as InP and InGaAsP.
InGaAs Bandgap and Alloy Composition
The bandgap of InGaAs depends on alloy composition. Increasing the indium fraction generally decreases the bandgap, while increasing the gallium fraction increases it. This tunability makes InGaAs useful for applications that require specific wavelength response or electronic characteristics.
Because InGaAs has a direct bandgap, photons can be absorbed efficiently without requiring an additional change in crystal momentum. This is one reason InGaAs is widely used in photodetectors, optical receivers, imaging systems, and other optoelectronic devices. Learn more about semiconductor bandgap properties.
InGaAs Lattice Matched to InP
A widely used InGaAs composition is approximately In0.53Ga0.47As, which is closely lattice matched to indium phosphide (InP). Lattice matching helps minimize strain and crystal defects when an InGaAs epitaxial layer is grown on an InP substrate.
InGaAs/InP heterostructures are commonly investigated for photodetectors, optical communication devices, high-speed transistors, laser structures, and integrated photonics.
InGaAs Applications
InGaAs is used in a wide range of electronic and photonic technologies because of its optical response, electronic transport properties, and compatibility with other III-V semiconductor materials.
- Infrared photodetectors for near-infrared and short-wave infrared sensing.
- Optical communications for receiving signals used in fiber-optic networks.
- SWIR and NIR imaging for scientific, industrial, and inspection systems.
- Spectroscopy for chemical, material, and optical analysis.
- High-speed transistors and advanced III-V electronic devices.
- Photovoltaic and thermophotovoltaic research.
- Integrated photonics and optical waveguide structures.
- Laser and optoelectronic research.
InGaAs Photodetectors, Sensors and Cameras
InGaAs is commonly used as the active semiconductor material in photodiodes, detector arrays, sensors, and infrared cameras. These devices are particularly useful when silicon detectors have insufficient sensitivity at longer near-infrared wavelengths.
Standard InGaAs detector systems are often designed for a spectral region of approximately 0.9 to 1.7 µm, although the exact wavelength response depends on material composition, epitaxial structure, detector design, and fabrication process.
Common applications include fiber-optic communications, spectroscopy, laser monitoring, machine vision, semiconductor inspection, remote sensing, scientific imaging, and materials characterization.
InGaAs for High-Speed Electronics
The high electron mobility of InGaAs makes it attractive for electronic devices requiring rapid carrier transport. InGaAs can be incorporated into advanced transistor structures and III-V heterostructures for research involving high-frequency electronics, RF devices, high-speed switching, and low-voltage device architectures.
InGaAs for Optical Communications and Photonics
InGaAs is especially important in optical communication systems because InGaAs-based photodetectors can operate at wavelengths commonly used in fiber-optic networks. The material is also used in photonic research involving waveguides, optical receivers, modulators, photodiodes, and heterostructures.
Researchers often combine InGaAs with InP or InGaAsP to engineer optical confinement, electrical contacts, absorption layers, and active regions for advanced photonic devices.
What Specifications Matter When Selecting InGaAs?
The correct InGaAs material depends on the intended device or experiment. When requesting a quote, researchers should provide as many of the following specifications as possible:
- InGaAs composition or indium fraction
- Wafer or substrate diameter
- Substrate material, such as InP
- Epitaxial layer thickness
- Doping type and concentration
- Crystal orientation
- Surface finish
- Layer structure or heterostructure requirements
- Target optical wavelength or device application
- Quantity required
If you do not know every specification, UniversityWafer can review your research or device requirements and help identify suitable InGaAs wafers and substrates.
InGaAs Optical Waveguide Research
InGaAs and related III-V materials are frequently investigated in optical waveguide structures. For example, researchers may use lattice-matched InP/InGaAsP structures with InGaAs contact layers to balance optical confinement, electrical performance, absorption, and contact resistance.
A researcher requested InP/InGaAsP wafers for an optical waveguide structure with InP cladding layers and an InGaAsP core. The project compared different cap-layer designs for active devices while considering optical absorption and electrical contact resistance.
Reference #162325 for specifications and pricing.
Buy InGaAs Wafers and Substrates
UniversityWafer supplies InGaAs materials for photonics, infrared detection, semiconductor devices, spectroscopy, high-speed electronics, and university research. Available specifications depend on composition, substrate, layer structure, dimensions, doping, and quantity.
Related InGaAs & III-V Semiconductor Resources
- Indium Gallium Arsenide (InGaAs) – Explore additional information about InGaAs materials, properties, and semiconductor research applications.
- InGaAs Wafers – View InGaAs wafer specifications and material options for research and device development.
- Indium Phosphide (InP) Substrates – Learn about InP substrates commonly used for lattice-matched InGaAs epitaxial structures.
- III-V Semiconductor Materials – Explore compound semiconductor materials used in photonics, electronics, sensing, and optoelectronic devices.
- Compound Semiconductors – Learn about compound semiconductor materials and their electronic and optical applications.
- Semiconductor Bandgap – Understand semiconductor bandgaps and how bandgap energy influences optical and electronic properties.
- Integrated Photonics – Explore substrates and semiconductor materials used in integrated photonic devices and research.
- Solar Cell Research – Learn about semiconductor substrates used for photovoltaic and advanced solar-cell research.