“I am interested in these AlN on Sapphire wafers. As I searched, I did not find much about it. Could you give me some introduction about AlN, what it is exactly, and what kinds of applications AlN on sapphire has?”
How UniversityWafer Helps AlN Researchers
UniversityWafer supplies epitaxial aluminum nitride (AlN) templates on sapphire and silicon wafers for semiconductor research, UV optoelectronics, GaN epitaxy, HEMT devices, laser diodes, photodetectors, and high-power electronics.
A university researcher requested additional information about aluminum nitride templates on sapphire substrates.
UniversityWafer, Inc. Responded:
Aluminum nitride (AlN) is a wide bandgap semiconductor material with high thermal conductivity, strong electrical insulation, excellent UV transparency, and high breakdown voltage. AlN templates grown on C-plane sapphire wafers are widely used as buffer layers for GaN epitaxy and UV semiconductor devices.
UV-grade AlN templates are commonly available with nominal AlN thicknesses ranging from 25nm to 6µm and feature epi-ready polished surfaces for:
- UVA, UVB, and UVC LEDs
- GaN epitaxial growth
- HEMT transistor fabrication
- Laser diodes
- RF semiconductor devices
- Photodetectors
- Wide bandgap semiconductor research
AlN templates also help reduce lattice mismatch between sapphire substrates and gallium nitride (GaN) epitaxial layers, improving crystal quality and device performance.
Reference #246809 for specifications and pricing.
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Electronic Devices Using AlN-on-Sapphire Wafers
Aluminum nitride templates on sapphire are widely used in high-frequency electronics, optoelectronics, microwave devices, and semiconductor manufacturing because of their thermal stability, UV compatibility, and electrical performance.
HEMT Semiconductor Devices
High Electron Mobility Transistors (HEMTs) use AlN and GaN heterostructures to achieve high-frequency operation, excellent electron mobility, and high-power handling capabilities.
HEMT devices are commonly used in:
- Radar systems
- Satellite communications
- 5G RF electronics
- Cell phone base stations
- Microwave amplifiers
- High-power RF systems
Laser Diodes
AlN-on-sapphire templates are used to fabricate laser diodes for optical communication, biomedical imaging, data storage, and ultraviolet laser applications.
Photodetectors
Photodetectors fabricated using AlN and GaN semiconductor structures convert light into electrical signals for imaging systems, sensing devices, optical communication, and UV detection technologies.
High-Voltage Electronics
Because aluminum nitride has high dielectric strength and thermal conductivity, AlN templates are widely used in high-voltage semiconductor devices and power electronics requiring stable operation at elevated temperatures.
RF and Microwave Semiconductor Devices
AlN-on-sapphire wafers are also used for:
- RF filters
- Oscillators
- Microwave semiconductor devices
- Wide bandgap electronics
- UVC optoelectronics
- High-frequency amplifiers
Advantages of Aluminum Nitride Templates
- Wide bandgap semiconductor properties
- Excellent thermal conductivity
- High breakdown voltage
- Excellent UV transparency
- Low defect density epitaxy
- High electrical insulation
- Strong chemical stability
- Compatibility with GaN epitaxial growth
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Aluminum Nitride (AlN) Templates on Sapphire Wafers
Aluminum nitride (AlN) templates on sapphire wafers are widely used in semiconductor research, UV optoelectronics, RF electronics, GaN epitaxy, HEMT fabrication, and laser diode development because of their excellent thermal conductivity, wide bandgap properties, and high electrical insulation.
Researchers in materials science, electrical engineering, nanotechnology, and photonics commonly use AlN-on-sapphire substrates to develop high-frequency semiconductor devices, ultraviolet LEDs, photodetectors, and high-power electronic systems.
Aluminum nitride templates also serve as high-quality buffer layers between sapphire substrates and GaN epitaxial layers, helping reduce lattice mismatch and improve crystal quality in advanced semiconductor devices.
Epitaxial AlN Templates for Semiconductor Research
A PhD candidate from a major research university requested the following:
“Can you send me a quote for epitaxial AlN templates on 2" or 4" sapphire and silicon substrates? Please include the surface roughness and film quality in terms of omega scans of the (0002) reflection.”
UniversityWafer supplied high-quality epitaxial AlN templates with:
- Low surface roughness ≤ 0.5nm
- Relaxed epitaxial AlN films
- Prime-grade semiconductor substrates
- High crystal quality
- XRD rocking curve characterization
- UV-grade AlN template structures
The quoted materials included:
- 100nm epitaxial AlN template on 2" sapphire substrate
- 25nm epitaxial AlN template on 2" silicon substrate
Researchers also requested AlN XRD rocking curve measurements and omega scans of the (0002) reflection to evaluate crystal quality and epitaxial film uniformity.
Reference #256078 for scans and pricing.
In-Stock AlN-on-Sapphire Wafers
UniversityWafer supplies aluminum nitride templates on C-plane sapphire wafers in multiple diameters, AlN thicknesses, and polish configurations for UV, RF, and GaN semiconductor applications.
| Undoped SI Doped AlN-on-Sapphire Wafer Series UV Grade Aluminum Nitride on C-plane SSP Sapphire | ||||||
|---|---|---|---|---|---|---|
| Dia | Orientation | Wafer Thickness | Polish | AlN Thickness | Conduction Type | Grade |
| 2" | <0001> | 430 ± 25µm | SSP | 25nm | Un-doped, SI-type | Prime |
| 2" | (001)/<0001> | 430 ± 25µm | SSP | 100nm | Un-doped, SI-type | Prime |
| 2" | (001)/<0001> | 430 ± 25µm | DSP | 100nm | Un-doped, SI-type | Prime |
| 2" | (001)/<0001> | 430 ± 25µm | SSP | 350nm | Un-doped, SI-type | Prime |
| 2" | (001)/<0001> | 430 ± 25µm | SSP | 500nm | Un-doped, SI-type | Prime |
| 2" | (001)/<0001> | 430 ± 25µm | SSP | 1.0µm | Un-doped, SI-type | Prime |
| 2" | (001)/<0001> | 430 ± 25µm | SSP | 4–5µm | Un-doped, SI-type | Prime |
AlN Template Specifications
- Custom AlN wafers available from 2" to 6"
- Single-side polished (SSP) and double-side polished (DSP)
- Prime grade, epi-ready, or as-grown surfaces
- Template thickness uniformity <10%
- Template resistivity >10⁶ Ohm-cm
- Low defect density epitaxial layers
AlN-on-Silicon Wafers for HEMT Applications
AlN templates on silicon wafers are commonly used for HEMT (High Electron Mobility Transistor) structures, RF electronics, microwave devices, and high-power semiconductor applications.
The combination of aluminum nitride and silicon provides:
- Excellent thermal conductivity
- High electron mobility support
- Wide bandgap performance
- Improved heat dissipation
- High breakdown voltage
- Compatibility with GaN epitaxy
| AlN-on-Silicon Wafer Series Prime Grade / For HEMT | ||||||
|---|---|---|---|---|---|---|
| Diameter | Orientation | Thickness | Polish | AlN Thickness | Conduction Type | Grade |
| 2" | (001)/(111) | Std | SSP | 25nm | Un-doped, SI-type | Prime |
| 4" | (001)/(111) | Std | SSP | 25nm | Un-doped, SI-type | Prime |
| 6" | (001)/(111) | Std | SSP | 25nm | Un-doped, SI-type | Prime |
| 8" | (001)/(111) | Std | SSP | 25nm | Un-doped, SI-type | Prime |
| 6" | (001)/(111) | Std | SSP | 100nm | Un-doped, SI-type | Prime |
| 6" | (001)/(111) | Std | SSP | 150nm | Un-doped, SI-type | Prime |
| 6" | (001)/(111) | Std | SSP | 200nm | Un-doped, SI-type | Prime |
Applications of AlN-on-Sapphire and AlN-on-Silicon
- UV LEDs and UVC devices
- HEMT transistors
- GaN epitaxial growth
- Laser diodes
- Photodetectors
- RF electronics
- Microwave semiconductor devices
- High-power electronics
- Optoelectronic systems
- Wide bandgap semiconductor research