Gallium Nitride on Silicon Carbide (SiC) for Research & Production

university wafer substrates

Get Your GaN on SiC Quote FAST!

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We also have the following

GaN on Sapphire

GaN on Silicon

Bulk GaN

1. Do custom GaN wafers upon request from 2'' ~ 8''
2. P/E : Single side polished,SSP
3. P/P : Both sides polished,DSP
4. TBD by qty.: Pricing According to the quantity
5. Wafer Grade: Prime grade
6. Template thickness uniformity: < 10%
7. Pricing of GaN on Si & GaN on SiC pls contact our sales engineer,Due to the only indicated with the range of the epi thickness

 

Gallium Nitride on Silicon Carbide (SiC) Benefits

Scientists state that there is no other currently used wafer that compares in effciency, reliability and performace of GaN on SiC wafers.

GaN on Silicon Carbide Switching Losses are 50% less than silicon alone.

sic vs si based power devices

SiC switching loss is 50% less than Si wen an Si Diode is replaced with a Schottky diode.  Go with SiC devices when you need FAST switching!

Below are just some of the GaN on SiC Substrates that we have available. Please send us your specs and quantity for us to quote.

GaN-on-Silicon Carbide (SiC)Wafer Series Prime grade

Diameter Orient. Substrate Thickness Surface Finish GaN Template Thickness Conduction Type Dopant Quantity
2" <0001> 350/500+/-25um  DSP 100~3000nm N/S.I-type Si/Fe  </=25
4" <0001> 350/500+/-25um  DSP 100~3000nm N/S.I-type Si/Fe  </=25
6" <0001> 350/500+/-25um  DSP 100~3000nm N/S.I-type Si/Fe  </=25