Gallium Nitride on Silicon Epitaxy Wafer

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Standard GaN-on-Si Standard Epi-Wafer Characteristics

GaN-on-Si FEATURES

  • High uniformity
  • Low leakage current
  • Higher operating temperatures
  • Excellent 2DEG characteristic
  • High breakdown voltage (600V-1200V)*
  • Lower ON-resistance*
  • Higher switching frequencies*
  • Higher operating frequencies (upto 18GHz)**

Typical Application

  • *Power HEMT
  • *RF HEMT
  • *GaN Diode
GaN Materials Specs  Dia 150mm
Wafer Warp (um) <50
AFM RM  (nm) <0.5
(002) FWHM (arcsec) <600
(102) FWHM (arcsec) <1200
Hall Sheet Resistiance (w-2) <500
Hall Sheet Carrier Density, N8 (Cm2) >1E+13
Hall Mobility, u (cm2/V-s) >1500

Typical GaN-on-Si Wafer

gan-on-si substrate

Could you give me more information on Blue/Green LED on Si?

Blue LED on Silicon wafer epi structure, Green LED epi structure are similar as it.

The surface morphology or layer quality are epitaxial growth finished for process LED chip as industrial standard.

silicon based light emitting diode gallium nitride epitaxial structure

We also have:

GaN on Sapphire

GaN on Silicon Carbide

Bulk GaN

150mm DesiGaN Power/RF HEMT Series

We have a large selection Gallium Nitride on Silicon wafers available diameters 100mm-200mm. Small quantities acccepted.

IGSS GaN 150mm DesiGaN Power/RF HEMT Series of Gallium Nitride on Silicon (GaN-on-Si) is an AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon(111) substrate targeting high voltage Power & RF applications.

See below for Inventory.

Standard GaN-on-Si Standard Epi-Wafer Characteristics

GaN-on-Si FEATURES

  • High uniformity
  • Low leakage current
  • Higher operating temperatures
  • Excellent 2DEG characteristic
  • High breakdown voltage (600V-1200V)*
  • Lower ON-resistance*
  • Higher switching frequencies*
  • Higher operating frequencies (upto 18GHz)**

Typical Application

  • *Power HEMT
  • *RF HEMT
  • *GaN Diode

GaN Cap 1-2 nanometers

AlGaN (24-28% Al / typ. 10-20nm)

GaN Channel (Typical 100-200nm)

UID GAN (2,000-4,000nm)

AlGaN Transition Layer

AlN Nucleation Layer

Si Substrate (111)

typical wafer warp of gan on silicon

Typical GaN-on-Silicon Wafer Warp (Total Wafer Warp = 23.3 µm [Max. local warp = 15.2µm; Min. local warp = -8.1µm] )

 

gallium nitride on silicon sheet resistance

Typical GaN-on-Silicon Sheet Resistance (Rsh = 437.9 W-2)

gallium nitride on silicon roughness

Typical GaN-on-Silicon Roughness (AFM RMS ~0.25nm (5x5um2)

Gallium Nitride on Silicon Inventory

We carry the following in stock. Please send us the specs and quantity you would like su to quote.

GaN-on-Silicon Wafer Series Prime grade

Diameter Orient. Substrate Thickness Surface Finish GaN Template Thickness Conduction Type Dopant Quantity
2 <111> 1000+/-25um SSP 100~5000nm N-type Un-doped </=25
4 <111> 525~1000+/-25um SSP 100~5000nm N-type Un-doped </=25
6 <111> 675~1000+/-25um SSP 100~5000nm N-type Un-doped </=25
8 <111> 725~1000+/-25um SSP 100~5000nm N-type Un-doped </=25
2~8 <111> 500~1000+/-25um SSP HEMT Structure GaN N/S.I-type S.I-doped </=25
4~6 <111> 500~1000+/-25um SSP Blue/Green LED GaN on Si N/P-type N/P-doped </=25
2~8 <111> 500~1000+/-25um SSP 100~500nm AlN S.I-type Un-doped </=25