|GaN Materials Specs||Dia 150mm|
|Wafer Warp (um)||<50|
|AFM RM (nm)||<0.5|
|(002) FWHM (arcsec)||<600|
|(102) FWHM (arcsec)||<1200|
|Hall Sheet Resistiance (w-2)||<500|
|Hall Sheet Carrier Density, N8 (Cm2)||>1E+13|
|Hall Mobility, u (cm2/V-s)||>1500|
Blue LED on Silicon wafer epi structure, Green LED epi structure are similar as it.
The surface morphology or layer quality are epitaxial growth finished for process LED chip as industrial standard.
We have a large selection Gallium Nitride on Silicon wafers available diameters 100mm-200mm. Small quantities acccepted.
IGSS GaN 150mm DesiGaN Power/RF HEMT Series of Gallium Nitride on Silicon (GaN-on-Si) is an AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon(111) substrate targeting high voltage Power & RF applications.