Wafer origin : Japan
N-type Bulk GaN wafer 4''
4'' Bulk GaN substrate wafer,HVPE Method
Orientation: C-Plane(0001) ±1.0 deg
Primary flat orientation :M-plane(10-10) ±0.5deg
Primary flat length: 32.0±1.0mm
Secondary flat orientation :A-plane(11-20) ±0.5deg
Secondary flat length: 16.0±1.0mm
Front surface finish: Epi-polished
Back surface finish: Polished
Dislocation density: <(1~6)E6/cm2
Conduction type: N-type
Resistivity: ≤ 0.5 Ohm.cm
Laser Marking : Back side or None
Packaging: Clean room,indicidual fluoroware wafer vacuum sealed
Please let us know if you can use!
We also have:
We have a large selection of Bulk GaN wafers in stock.
Our Bulk GaN including N-type and Semi insulating type from 2" to 4", as well as small pieces of customized dimensions,also different of crystal orientations,pls see attachment for our general wafer spec.
Besides Bulk GaN wafer, we also do well on GaN-on-Silicon/SiC/Sapphire Based HEMT wafer,of which very popular GaN wafer in recently years,vand will come being main stream on Power and RF applications.
Please let us know if you have an interest.
Please let us know which spec you can use or send us the specs and quantity that you would like us to quote!
Bulk Gallium Nitride Substrates
|Diameter||Orient.||Substrate Thickness||Surface Finish||GaN Template Thickness||Conduction Type||Dopant||Quantity|
|2||<0001>||400+/-30um||SSP / DSP||Bulk GaN Wafer||N/S.I||N/S.I||</=25|
|4||<0001>||600+/-30um||SSP / DSP||Bulk GaN Wafer||N/S.I||N/S.I||</=25|
|2||<0001>||400+/-30um||SSP / DSP||GaN Epi on GaN Substrate||N/S.I||N/S.I||</=25|