Bulk Gallium on Nitride (GaN) for Research/Production

university wafer substrates

Freestanding Bulk Gallium Nitride Wafers

A corporate researcher requested a quote for the following:

We are interested in bulk freestanding gallium nitride substrates. Can you please provide a spec sheet and quote for 2inch (0001) substrates in your standard price break points? Can you also provide a quote for {20-21} substrates and what your typical piece sizes are?

For the quality, all of the HVPE grown suppliers have dislocation densities less than 5x10^6 and x-ray FWHM <100 arc.secs. The differences in the grades between suppliers comes from the macro scale holes and pits, with the lowest quality wafers suggesting less than 30 of these features that are smaller than 1500um^2 and the best quality wafers having less than 5 of these features. I hope that is helpful in your future sourcing of material. We haven’t yet ordered any material but we will be interested in the quality when we do receive it.

Reference # 264074 for specs and pricing.

Where Can You Purchase Bulk Gallium Nitride (GaN) and GaN Wafers?

We have a large selection of Bulk GaN wafers in stock.

Our Bulk GaN including N-type and Semi insulating type from 2" to 4", as well as small pieces of customized dimensions,also different of crystal orientations,pls see attachment for our general wafer spec.

Besides Bulk GaN wafer, we also do well on GaN-on-Silicon/SiC/Sapphire Based HEMT wafer,of which very popular GaN wafer in recently years,vand will come being main stream on Power and RF applications.

Please let us know if you have an interest.

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Bulk Gallium Nitride for Electronic Power Device

Bulk Gallium Nitride High voltage and high frequency power electronic devices created with Bulk GaN have fewer impurities thus improving performance over Gallium Nitride grown a substrate including

Few companies can grow Bulk, or Free Standing, Gallium Nitride.

But UniversityWafer, Inc. and our partners can!

Below are just some of our Free Standing and Bulk 100mm GaN substrates

Wafer origin : Japan
N-type Bulk GaN wafer 4''
4'' Bulk GaN substrate wafer,HVPE Method
Diameter: 100.0±0.5mm
Orientation: C-Plane(0001) ±1.0 deg
Primary flat orientation :M-plane(10-10) ±0.5deg
Primary flat length: 32.0±1.0mm
Secondary flat orientation :A-plane(11-20) ±0.5deg
Secondary flat length: 16.0±1.0mm
Thickness: 400±30um
TTV: </=35um
Micro-roughness: Ra</=0.2nm
Front surface finish: Epi-polished
Back surface finish: Polished
Micro-roughness: Ra</=1.0nm
Dislocation density: <(1~6)E6/cm2
Conduction type: N-type
Resistivity: ≤ 0.5 Ohm.cm
Laser Marking : Back side or None
Packaging: Clean room,indicidual fluoroware wafer vacuum sealed

Please let us know if you can use!

We also have:

GaN on Sapphire

GaN on Silicon

GaN on Silicon Carbide

What is Bulk Gallium Nitride?

Bulk gallium nitride (GaN) is a type of gallium nitride (GaN) material that is grown in a crystal form, as opposed to being grown on a substrate such as silicon or sapphire. The term "bulk" refers to the fact that the GaN material is not grown on a substrate and is instead free-standing.

Bulk GaN has a number of unique properties that make it suitable for a variety of applications. It has a wide bandgap, high electron mobility, and a high breakdown voltage, which make it ideal for use in high-power electronic devices such as power amplifiers, switches, and rectifiers. It is also used in the production of light-emitting diodes (LEDs) and radio frequency (RF) devices.

Bulk GaN is typically grown using a process called metalorganic chemical vapor deposition (MOCVD), in which a gas mixture containing gallium and nitrogen is introduced into a reactor chamber and deposited onto a substrate, forming a crystal lattice of GaN. The resulting material is then typically cut into thin wafers and processed into devices.

Overall, bulk GaN is a highly versatile material with a wide range of applications in a variety of industries.

Bulk GaN Inventory

Please let us know which spec you can use or send us the specs and quantity that you would like us to quote!

Bulk Gallium Nitride Substrates

Diameter Orient. Substrate Thickness Surface Finish GaN Template Thickness Conduction Type Dopant Quantity
2 <0001> 400+/-30um SSP / DSP Bulk GaN Wafer N/S.I N/S.I </=25
4 <0001> 600+/-30um SSP / DSP Bulk GaN Wafer N/S.I N/S.I </=25
2 <0001> 400+/-30um SSP / DSP GaN Epi on GaN Substrate N/S.I N/S.I </=25

What is Bulk Gallium Nitride Used For?

Bulk GaN is used to build many different types of high voltage and high frequency power electronics. It is used extensively in the construction of electric circuits. This material has many useful properties that make it ideal for these applications. It is highly conductive of electricity and so it is often used as a carrier in circuits. The material is also flexible, so it is easy to handle and shape.

When this metal is used as a carrier, it is often coated with a thin layer of an alloy that offers protection from friction and wears and tears. This helps to prevent the build up of stress cracks and dents caused by the movement of the metal. It also makes it much easier to place the plates and diodes in the correct positions. Without this coating the material would be too slippery.

Many devices that use bulk gallium nitride have a flat, smooth, high-quality surface finish. Some are polished and some have anodized finishes. Some carriers are textured so that they can have a rough surface finish. Because the metal is so smooth, its surface finish is normally more than 50% smoother than other metals. Because of this smooth surface it is used for many different kinds of applications including:

High frequency power electronics are devices that use a high frequency to transfer power between the input device and the output device. These devices are very popular in many different industries because they are extremely energy efficient and very fast. They transfer large amounts of power very fast, which is why they are very popular in various industries. One of the most common materials that are used for the surface top of these devices is bulk gallium nitride. This material serves as a protective coating that helps to reduce the friction and wear that occurs during the transfer of high frequency power.

One industry that makes use of this material is the medical industry. There are two parts to this device. One part is the device's body, which is made up of gallium nitride and another part is the contacts that are located on the surface of the device. The body of the device has several contacts that are used to transfer power from one part to another. Some of the devices are used in medical imaging where the surface material is used to form a picture of the internal organs that are being transferred by the device.

Another type of application for this material includes using it to make high frequency generators that are very useful for research in the fields of aerodynamics and engineering. These generators use the surface material to create the generators which use a large number of small gallium nitride crystals as their power source. These crystals send out high frequency vibrations that are similar to that of the sound that is created inside an aircraft.

The surface can also be used to create high frequency transmissions that can transmit through several communications cables without causing interference with one another. This is particularly useful in communication systems that have a number of antennas. Gallium nitride is also used to make thin layers that can be used in the nose cones of an airplane that are designed to reduce the drag that is caused by the air flow.

Materials that are needed to make a high frequency transmission device include an electrode, a carrier that is capable of transferring energy to the surface and a medium that allow the transference of the energy. The electrode is generally composed of several materials including gallium nitride, silver and silicon. Silicon is often used because it has the highest bandwidth of all of the materials. When the energy comes into contact with the surface material the electrons travel between the two objects in the circuit. The energy then converts the electrons into high frequency vibrations that are sent out by the carrier material. This process is repeated as long as the carrier device is in operation.