Silicon has 14 protons in its nucleus.
The atomic number of an element represents the number of protons in its nucleus, and for silicon, the atomic number is 14. This is one of the fundamental identifying characteristics of silicon as an element.
These 14 protons, combined with 14 neutrons in the most common isotope (silicon-28), make up the nucleus, around which the 14 electrons orbit in the three shells shown in the animation (2 in the first shell, 8 in the second shell, and 4 in the third shell).
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Silicon atoms are at the forefront of cutting-edge semiconductor research, especially in areas like single-atom transistors, atomic layer etching, and quantum computing. Here's an overview of the latest advancements:
Researchers have achieved the remarkable feat of creating transistors from individual atoms embedded in silicon lattices. For instance, scientists at the University of New South Wales (UNSW) precisely placed a single phosphorus atom within a silicon crystal to function as a transistor, marking a significant step toward atomic-scale logic circuits.
Similarly, the National Institute of Standards and Technology (NIST) developed a method to fabricate single-atom transistors using a step-by-step recipe, aiming to make these atomic-scale devices more reproducible.
Atomic Layer Etching (ALE) is a technique that allows for the removal of material one atomic layer at a time, offering unparalleled precision in semiconductor fabrication. Recent studies have explored ALE processes using chlorine and hydrogen bromide plasmas to etch silicon with high selectivity and control.
Moreover, advancements in ALE have led to the development of novel radical generation modules, enhancing the efficiency and reproducibility of the etching process.
In the realm of quantum computing, silicon atoms are being utilized to create qubits—the fundamental units of quantum information. Researchers are leveraging the spin states of electrons or nuclei in silicon to develop qubits with long coherence times and compatibility with existing semiconductor technologies.
Notably, a team at UNSW has demonstrated the use of single phosphorus atoms in silicon to create stable qubits, paving the way for scalable quantum processors.
University of New South Wales (UNSW): Pioneering work in single-atom transistors and silicon-based qubits.
National Institute of Standards and Technology (NIST): Developed reproducible methods for fabricating atomic-scale devices.
Imperial College London: Researching single-atom silicon quantum electronics compatible with large-scale manufacturing.
University of Rochester: Focusing on optimizing silicon materials for quantum computing applications.
If you're interested in more detailed information, such as recent publications, patents, or visual diagrams of atomic placement in silicon lattices, feel free to ask!
There is extensive semiconductor research specifically focused on silicon atoms, as silicon is the foundational element of modern electronics. Here’s a breakdown of how research at the atomic level of silicon plays a crucial role in semiconductors:
Researchers are working to place individual silicon atoms to act as qubits (in quantum computing) or even transistors.
Notable example: Michelle Simmons’ lab in Australia created a single-atom transistor by precisely placing a phosphorus atom into a silicon lattice using a scanning tunneling microscope (STM).
Manipulating the surface atoms of silicon wafers (especially Si(100) and Si(111)) is critical for:
Chemical passivation
Molecular electronics
Surface dangling bonds and hydrogen passivation are hot topics, especially in 2D material integration and quantum dot fabrication.
Silicon atoms doped with phosphorus or other atoms are being studied to serve as qubits due to their long coherence times.
Isotopically pure 28Si wafers reduce nuclear spin noise, which is ideal for qubit stability.
Research on atomic precision etching (ALE) focuses on removing silicon atoms one at a time to make sub-5nm devices.
Similarly, atomic layer deposition techniques focus on adding material atom by atom on silicon substrates.
Studies often zoom in on how individual silicon atoms vacate or shift under high-energy ion implantation or radiation.
These defects are mapped and manipulated to improve device reliability, especially in space and high-radiation environments.
Quantum mechanical and molecular dynamics simulations are used to predict how silicon atoms behave in different doping conditions, strain states, or temperature ranges.
MIT, Stanford, IBM Research, UC Berkeley, and UNSW Sydney are heavily involved.
Fields: Quantum computing, nanofabrication, spintronics, and next-gen transistors (FinFET, GAAFET, etc.)
Semiconductor devices (microchips, transistors), solar cells, glass manufacturing, ceramics, optical fibers
Note: This is a simplified representation. In reality, electrons don't orbit in circles but exist as probability clouds (orbitals).