6H Silicon Carbide Wafers

When you refer to “6H Silicon Caribe,” I assume you meant 6H-Silicon Carbide (6H-SiC) substrates (i.e. the 6H polytype of SiC). Below is a summary of the applications and device domains that employ 6H-SiC substrates (or more generally, hexagonal SiC substrates), plus caveats and comparison with other polytypes (e.g. 4H-SiC).

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Why 6H-SiC (and SiC in general) is attractive

Before listing applications, it's useful to recall what makes SiC (and 6H in particular) desirable:

• Wide bandgap: allows operation at higher temperature, higher voltage, lower leakage. Emerald+3PMC+3ScienceDirect+3

• High thermal conductivity: aiding heat removal in power devices. arXiv+2ScienceDirect+2

• High breakdown electric field: supports high-voltage operation. PMC+3ScienceDirect+3Zadient+3

• Tolerance to harsh environments: high temperature, radiation, etc. Zadient+2NASA Technical Reports Server+2

• Compatibility with epitaxial growth of other materials (e.g. graphene, GaN) in some cases. Wikipedia+2arXiv+2

However, not all polytypes are equally used. In more recent years, 4H-SiC has often been preferred for many commercial high-power and high-frequency devices because of better electron mobility and more mature fabrication support. But 6H-SiC still finds use in some niche or legacy applications.

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Applications that use (or have used) 6H-SiC substrates

From the literature and industry sources, the following application domains have employed or considered 6H-SiC substrates:

Beyond these, more general system-level applications enabled by SiC-based power electronics include:

• Inverters and converters for wind, solar, and other renewable systems Coherent Inc

• Electric vehicle power electronics (on-board chargers, DC–DC converters, traction inverters) Coherent Inc

• Industrial motor drives, smart grids, power switching infrastructure Coherent Inc

• Radar systems, 5G / communication infrastructure (for RF front-end, power amplifiers) Coherent Inc+1

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Caveats, trade-offs, and shifts in preference

• Mobility / carrier transport: 4H-SiC generally offers better electron mobility than 6H in many orientations, which is one reason 4H has become more dominant in high-performance power devices.

• Defect density & crystal quality: The performance is sensitive to defects (dislocations, micropipes). The cost and difficulty of producing very high quality 6H substrates can limit their widespread adoption.

• Material maturity and ecosystem: Over time, the semiconductor ecosystem (tooling, epitaxy, processing) has converged more toward 4H-SiC, giving it advantages in cost, yield, and integration.

• Use in niche roles: Because of the above, 6H may remain more common in niche / legacy / research applications rather than mass-market power conversion.

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If you like, I can provide a comparison of when one would choose 6H vs 4H for particular applications, or a current market survey of which devices still use 6H substrates. Do you want me to go into that?