Float Zone Silicon To Fabricate Power Electronics
A postdoc requested a quote for the following.
We are university researchers. We
need 4 inch high-resistivity silicon wafers in our power electronics
device R&D. The reqirements are: 4 inch N type 100 orientation FZ
> silicon wafers with about 550 ohm-cm and 90-110 ohm-cm resistivity. Please<
provide 100-N FZ wafer spec and price ASAP.
From your Silicon wafer data sheet we can
see that the lowest resistivity 4" 100N FZ wafer you can provide is >1000
(1720-2120)ohm-cm which item# F774. There are only 9 pieces wafers in
stock now. We will discuss if we can use these wafers for our research.
Please also inform us how to submit PO, how to pay to your company and how
long should it take to deliver them.
Reference #123270 for specs and pricing.
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Silicon Wafers Used To Fabricate Power Electronics Module
A automotive power electronics researcher requested a quote for the following.
I am interested in Si wafers in the thickness range of 200 to 350 um with a
backside metallization of Ti/Ni/Ag or Al/Ti/Ni/Ag. I would also like the quote to
include your dicing service to cut the wafers into 10x10mm square samples. I
would need sufficient wafers of an appropriate diameter to yield 100 10x10mm
samples, but I think one 8" silicon diameter or larger wafer would be large enough. I am
performing an assessment of various attach materials that would be used to bond IGBTs and diodes to a power electronics module, but I am requesting a quote to
see if it is cheaper to make "dummy" diodes instead of purchasing working
components. I am not concerned about orientation, resistivity, or dopant.
Reference #125182 for specs and pricing.
Substrates Used To Fabricate RF and Power Electronics
A senior engineer requested a quote for the following.
I work as a R&D senior engineer a SME specializing in electrical characterization of substrates for RF (5G and beyond) and power electronics. We are conducting a benchmarking study to compare the RF figures of merits/performance of various wafers widely available on the market. I went through the product page of your website and I would be interested in purchasing a few wafers: -SiC wafer (4H or 6H epi-ready) -GaN/Si -GaN/Sapphire (un-dopted) -Bulk GaN Could you please provide us a quotation for these substrates. We just need 1 wafer of each kind. We do not need specific thickness and 2 inch wafers would be large enough for us. Do not hesitate to reach out if you need more details.
Reference #262627 for specs and pricing.
Applicability Ranges of Semiconductor Materials In Power Electronics Based on Voltage and Frequency
What's the Difference Between 6H and 4H? Silicon Carbide (SiC) Substrates for Power Electronics
A PhD candidate requested help with the following.
What is the difference between 4H and 6H SiC Wafers?
UniversityWafer, Inc. Answered:
-
6H-SiC wafers (N-type) are widely used for fabricating high-brightness LEDs, and for other research interest such as optical window
- 4H-SiC wafer (N-type) are used for wide application in the field of power electronics, such as rectifier and switch devices.
- Semi-insulating (4H or 6H) SiC wafers are used for the fabrication of RF (radio frequency) and microwave device.
Reference #96190 for more specs and pricing.
Gallium Nitride Epi for High Power Electronic Devices
An associate professor studing power electronics requested a quote for the following.
We are seeking a GaN epi provider as a business partner for the purpose of high power electronics (specifically GaN-on-SiC). Could you please provide us with the possible solutions from your product list and specifications?
We potentially need 5wafers/month (3”) for next 4 years. We are looking for industrial grade HEMT structures on SiC for the purpose of high power applications. I would like to start with some generic test wafers with AlGaN/GaN system having around ns>1*10^13cm-2, mobility around 1500cm2/Vs. Could you able to get me a quote for GaN HEMT epi on SiC templates as you did for sapphire substrate version? Thank you very much.
Reference #142478 for specs and pricing.
Cadmium Telluride Used To Fabricate Advanced Power Electronics
A corporate scientist requested a quote for the following.
We are looking for CdTe panels at ther moment in overall power around 1kW to bulit an university located demonstrator of this,k not so popular in Poland, PV technology. As the project involved concerns EU-wide pre-commericalization of the solution comprising of post EV battery pack, advanced power electronics and PV harvesting we hope to bulit some advantage based on this technology over the silicon widespreaded here.
Reference #268340 for specs and pricing.
