GaN HEMT Wafers on Silicon for Power and RF Research

GaN HEMT wafers (high electron mobility transistor wafers) are used to study high-voltage power devices, RF amplifiers and fast-switching electronics. UniversityWafer supplies AlGaN/GaN HEMT substrates, including dummy-grade GaN-on-silicon wafers for materials characterization, defect inspection and process development. Explore the 150 mm epitaxial layer structure and request specifications for your experiment.

AlGaN/GaN HEMT Epitaxial Wafers for Power Electronics

Gallium nitride (GaN) is a wide-bandgap semiconductor that has become one of the most important materials for high-power and high-frequency electronics. Researchers developing High Electron Mobility Transistors (HEMTs) use GaN because of its high electron mobility, high breakdown voltage, and excellent thermal performance.

Compared with conventional silicon-based transistors, GaN HEMT devices can operate at higher voltages and switching frequencies while reducing power losses. These advantages make HEMT technology attractive for power conversion, RF devices, communications systems, radar, and next-generation power electronics.

UniversityWafer, Inc. supplies dummy grade HEMT GaN wafers for defect analysis, process development, and device fabrication. Researchers often use lower-cost wafers and rejects for crystal defect studies, characterization, and prototype development.

Researcher Request for HEMT GaN Wafers

"I'm looking for wafers used in power, HEMT, and photonics applications, starting with GaN. I don't necessarily need whole wafers and could use rejects since I'll be hunting for crystal defects. My budget is only a few hundred dollars."

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Dummy-grade versus device-grade: dummy or reject wafers can be useful for defect inspection, training and process trials, but may not meet the uniformity or electrical performance needed for functional transistor fabrication. Request available defect information, wafer condition and measured parameters before ordering.

For high electron mobility transistor (HEMT) substrate research, the underlying material matters. GaN wafer options include structures grown on sapphire and silicon, while silicon carbide (SiC) substrates are relevant to high-power and RF device research. Substrate selection depends on epitaxial stack, intended measurements, thermal requirements and process compatibility.

Choosing a GaN HEMT Substrate for Research

Typical HEMT GaN Wafer Specification

UniversityWafer, Inc. commonly supplies AlGaN/GaN HEMT epitaxial wafers grown on silicon substrates. Many in-stock wafers are based on 150 mm (6-inch) silicon wafers.

Dummy Grade HEMT GaN Wafer for Power Applications:

  • Substrate: Silicon (111), 1000 μm thickness
  • Wafer Diameter: 150 mm (6 inch)
  • Epitaxial Layer Thickness: ≥ 4.0 μm
  • AlGaN Barrier Thickness: 25 nm
  • AlN Spacer Layer: 1 nm
  • GaN Channel Thickness: 300 nm
  • Surface Roughness: RMS < 0.5 nm (5 × 5 μm²)
  • Wafer Bow: < 50 μm
  • 2DEG Sheet Density: ≥ 1.0 × 1013 cm-2
  • Electron Mobility: ≥ 1600 cm²/V·s
  • Sheet Resistance: > 360 Ω/sq
  • Buffer Resistivity: > 105 Ω·cm
  • Vertical Breakdown Voltage: > 600 V

Typical Delivery: Approximately 1 week.

What Is a GaN High Electron Mobility Transistor Wafer?

A HEMT GaN wafer is a semiconductor wafer designed for high electron mobility transistor research and power device fabrication. HEMT stands for High Electron Mobility Transistor, a device structure that uses materials such as GaN and AlGaN/GaN to support fast electron transport, high breakdown voltage, and efficient switching performance. HEMT GaN wafer fabrication for power electronics

Gallium nitride HEMT wafers are widely used in power electronics, RF devices, high-frequency circuits, photonics research, and next-generation transistor development. Compared with traditional silicon devices, GaN-based HEMTs can operate at higher voltages, higher temperatures, and higher switching speeds, making them useful for advanced electronic and energy-efficient device applications.

HEMT GaN Wafer Structure

A typical AlGaN/GaN HEMT wafer may include a silicon substrate, GaN buffer layer, GaN channel, AlN spacer, and AlGaN barrier layer. This layered structure helps create a two-dimensional electron gas, also called 2DEG, which allows electrons to move quickly through the device channel.

For power applications, researchers often look for key specifications such as wafer diameter, substrate orientation, epi-layer thickness, sheet resistance, electron mobility, wafer bow, surface roughness, and vertical breakdown voltage. These properties help determine whether the wafer is suitable for HEMT device fabrication, defect analysis, and power transistor testing.

Applications for HEMT GaN Wafers

HEMT GaN wafers are used in a wide range of research and manufacturing projects, including:

HEMT GaN wafer applications in power electronics, RF devices and semiconductor research

GaN on Silicon for HEMT Research

Many HEMT GaN wafers are grown on silicon substrates because silicon offers larger wafer diameters, lower substrate cost, and compatibility with established semiconductor processing. Silicon (111) is commonly used for GaN epitaxy because its crystal orientation can support the growth of GaN-based device layers.

UniversityWafer, Inc. supplies dummy grade HEMT GaN wafers, GaN-based research wafers, and related semiconductor substrates for universities, laboratories, and device developers. Researchers may use these wafers for process testing, defect hunting, device characterization, and power electronics experiments.

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