The Czochralski Method
The Czochralski method of growing silicon crystals is the cheapest and most common way of making silicon wafers. However, it tends to produce impurities in the silicon, which have a negative effect on the efficiency of solar panels. For higher purity Float Zone (FZ) wafers are used.
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Czochralsk (CZ) and Float Zone (FZ) Grown Silicon Ingots
| CZ and FZ Ingots in Stock |
|---|
| FZ NTD 3"Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI, 1Flat, made by PHTS |
| FZ 8"Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm) NO Flats, made by SilChm |
| FZ 6"Ø As-Grown ingot, 153.6mmØ×180mm, P/B[100]±2.0°, (122-127)Ohmcm, MCC Lifetime>8,025μs, made by SilChm |
| FZ 6"Ø ingot P/B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, NO Flats, made by SilChm |
| FZ 6"Ø ingot P/B[100] ±2.0°, Ro: 600-900 Ohmcm, Ground, (1 ingot: 74mm) SEMI, 1Flat (57.5mm), made by Xiamen |
| FZ 6"Ø ingot P/B[100] ±2.0°, Ro: 2,736-3,206 Ohmcm, (1 ingot: 36mm) SEMI, 1Flat (57.5mm), made by SilChm |
| FZ 6"Ø ingot n-type Si:P[100] ±2°, Ro: 25.70-26.29 Ohmcm, MCC Lifetime>2,218μs, (1 ingot: 163mm) NO Flats, made by SilChm |
| FZ 6"Ø×275mm ground ingot, n-type Si:P[100], (0.307-0.313)Ohmcm, NO Flats, made by SilChm |
| FZ 6"Ø×101mm ground ingot, n-type Si:P[100], (0.350-0.353)Ohmcm, NO Flats, made by SilChem |
| FZ 6"Ø×124mm n-type Si:P[100], (0.556-0.600)Ohmcm, Ground, NO Flats, made by SilChm |
| FZ 6"Ø×52mm ground ingot, n-type Si:P[100], (23.86-25.05)Ohmcm, MCC Lifetime=16,352μs, NO Flats, made by SilChm |
| FZ 6"Ø ingot n-type Si:P[100], Ro: 3,605-8,162 Ohmcm, (1 ingot: 30mm) NO Flats, made by SilChm |
| FZ 6"Ø ingot n-type Si:P[100] ±2.0°, Ro: 40-70 Ohmcm, Ground, NO Flats, made by SilChm due 6/1/2020 |
| FZ 6"Ø ingot n-type Si:P[100] ±2°, Ro: 4.65-5.11 Ohmcm, MCC Lifetime>2,000μs, (1 ingot: 22.5mm) 1Flat, made by SilChm |
| FZ 6"Ø×248mm ground ingot, n-type Si:P[100], (0.557-0.565)Ohmcm, NO Flats, made by SilChm |
| FZ 6"Ø ingot n-type Si:P[111] ±2°, Ro: 5,000-10,000 Ohmcm, MCC Lifetime>1,000μs, Ground, (1 ingot: 34.5mm) JEIDA, made by PHTS |
| FZ 6"Ø ingot Intrinsic Si:-[100] ±2.0°, Ro: >65,000 Ohmcm, MCC Lifetime>1400μs, Ground, (1 ingot: 94mm) NO Flats, made by Xiamen |
| FZ 5"Ø ingot P/B[100] ±2.0°, Ro: 2,879-3,258 Ohmcm, As-Grown, (1 ingot: 172mm) SEMI, 1Flat, made by SilChm |
| FZ 5"Ø ingot n-type Si:P[111] ±2°, Ro: 70-110 Ohmcm, Ground, (1 ingot: 115mm) SEMI, 1Flat, made by Topsil |
| FZ 5"Ø×59mm ground ingot, n-type Si:P[111], (5,400-7,200)Ohmcm, MCC Lifetime>1,200μs, 1 SEMI Flat, made by PHTS |
| FZ 4"Ø ingot P/B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm) NO Flats, made by ATC |
| FZ 4"Ø×14mm P/B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000μs, 1 SEMI Flat, made by PHTS |
| FZ 4"Ø ingot P/B[110] ±2°, Ro: 2,600-3,800 Ohmcm, (1 ingot: 99mm) NO Flats, made by SilChm |
| FZ 4"Ø ingot P/B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1000μs, (1 ingot: 132mm) 1Flat, made by ATC |
| FZ 4"Ø ingot P/B[100] ±2.0°, Ro: 2.200-2.221 Ohmcm, As-Grown, (1 ingot: 350mm) NO Flats, made by SilChm |
| FZ 4"Ø×55mm P/B[100], (1,000-2,000)Ohmcm, MCC Lifetime>700μs, 1 SEMI Flat, made by PHTS |
| FZ 4"Ø ingot P/B[100] ±2°, Ro: 1,900-2,300 {1,953-2,265} Ohmcm, Ground, (1 ingot: 97mm) 1Flat, made by Gener |
| FZ 4"Ø ingot P/B[110] ±2°, Ro: 1,900-3,600 Ohmcm, (1 ingot: 100mm) NO Flats, made by SilChm |
| FZ 4"Ø×210mm P/B[100] (500-1,000)Ohmcm, MCC Lifetime=700μs, Ground, NO Flats, made by PHTS |
| FZ 4"Ø ingot P/B[110] ±2°, Ro: 1-10 Ohmcm, Ground, (1 ingot: 41mm) 1Flat, made by Gener |
| FZ 4"Ø ingot P/B[111] ±0.5°, Ro: 8,220-12,252 Ohmcm, (1 ingot: 237mm) NO Flats, made by SilChm |
| FZ 4"Ø ingot n-type Si:P[100] ±2.0°, Ro: 10.069-10.255 Ohmcm, As-Grown, (1 ingot: 65mm) 1Flat, made by SilChm |
| FZ 4"Ø ingot n-type Si:P[110] ±2°, Ro:>1 Ohmcm, Ground, 1Flat, made by Gener |
| FZ 4"Ø ingot n-type Si:P[100] ±2°, Ro: 50-100 Ohmcm, 1Flat, made by SPC |
| FZ 4"Ø ingot n-type Si:P[100] ±2.0°, Ro: 346.0-366.8 Ohmcm, , made by SilChm due 5/19/2020 |
| FZ 4"Ø ingot n-type Si:P[100] ±2.0°, Ro: 0.94-0.96 Ohmcm, MCC Lifetime>1000μs, (2 ingots: 244mm, 43mm) 1Flat, made by ATC |
| FZ 4"Ø×38mm ground ingot, n-type Si:P[100] (0.8-2.5) {0.91-2.29}Ohmcm, Lifetime >300μs, Ox<1E16/cc, C<1E16/cc, NO Flats, made by Pluto |
| FZ 4"Ø ingot n-type Si:P[100] ±2.0°, Ro: >1,000 Ohmcm, (1 ingot: 28mm) 1Flat |
| FZ 4"Ø ingot n-type Si:P[110] ±2°, Ro:>4,800Ohmcm, Ground, SEMI, 1Flat (47.5mm), T>1,000μs, made by PHTS |
| FZ 4"Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670μs, NO Flats, made by SilChm |
| FZ 4"Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866μs, NO Flats, made by SilChm |
| FZ 4"Ø ingot n-type Si:P[111] ±2.0°, Ro: 0.0116-0.0121 Ohmcm, (1 ingot: 90mm) NO Flats, made by SilChm |
| FZ 4"Ø ingot n-type Si:P[111] ±2.0°, Ro: 2,000-4,000 Ohmcm, (1 ingot: 292mm) NO Flats, made by Xiamen |
| FZ 4"Ø×40mm ground ingot, n-type Si:P[111], (5,000-13,000)Ohmcm, MCC Lifetime>1,100μs, NO Flats, made by PHTS |
| FZ 4"Ø ingot n-type Si:P[111] ±2°, Ro: 6,100-7,800 Ohmcm, MCC Lifetime>1300μs, (1 ingot: 38mm) 1Flat, made by PHTS |
| FZ 4"Ø ingot n-type Si:P[111] ±0.5°, Ro: >1,000 Ohmcm, Ground, SEMI, 2Flats, made by Gener |
| FZ 4"Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm, NO Flats, made by SilChm |
| FZ 4"Ø ingot Intrinsic Si:-[100], Ro:>150,000 Ohmcm, MCC Lifetime>1,700μs, Ground, (1 ingot: 60mm) NO Flats, made by DX |
| FZ 4"Ø ingot Intrinsic Si:-[100], Ro:>90,000 Ohmcm, MCC Lifetime>1,600μs, Ground, (1 ingot: 140mm) NO Flats, made by DX |
| FZ 4"Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, MCC Lifetime>1000μs, Ground, (3 ingots: 146mm, 120mm, 120mm) NO Flats, made by DX |
| FZ 4"Ø ingot Intrinsic Si:-[111] ±0.5°, Ro: >20,000 Ohmcm, MCC Lifetime>1,000μs, Ground, (1 ingot: 41mm) NO Flats, made by DX |
| FZ 4"Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >25,000 Ohmcm, Ground, (2 ingots: 61mm, 72mm) NO Flats, made by DX |
| FZ 3"Ø×102mm ingot P/B[111] ±2°, (4,400-4,600)Ohmcm, Ground, SEMI, 1Flat, made by SPC |
| FZ 3"Ø ingot P/B[111] ±0.5°, Ro: 1,000-2,000 Ohmcm, Ground, NO Flats, made by Pluto |
| FZ Ingot 3"Ø×(112+265)mm, P/B[111] ±2°, (1,800-3,000)Ohmcm, Lifetime>1,000μs, SEMI, NO Flats, made by PHTS |
| FZ 3"Ø ingot n-type Si:P[100] ±2°, Ro: 4.65-5.11 Ohmcm, MCC Lifetime>2000μs, (1 ingot: 99mm) 1Flat, made by SilChm |
| FZ 3"Ø×(129+131+147)mm ground ingot, n-type Si:P[100] ±2°, (40-60)Ohmcm, NO Flats, made by Pluto |
| FZ 3"Ø×(117+135)mm ground ingot, n-type Si:P[100] ±2°, Ro>5,000 Ohmcm, MCC Lifetime>1,000μs, NO Flats, made by Pluto |
| FZ 3"Ø ingot n-type Si:P[111] ±2.0°, Ro: 5,750-6,850 Ohmcm, MCC Lifetime>6000μs, As-Grown, (3 ingots: 81mm, 124mm, 18mm) 1Flat, made by SilChm |
| FZ 3"Ø ingot n-type Si:P[111] ±2°, Ro: 2,000-6,000 Ohmcm, (1 ingot: 90mm) NO Flats, made by PHTS |
| FZ 3"Ø×188mm ground ingot, n-type Si:P[111] ±0.5°, Ro:>2,000 {2.330-3,300}Ohmcm, MCC Lifetime>1,640μs, NO Flats, made by PHTS |
| FZ 3"Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, Ground, (7 ingots: 69mm, 139mm, 146mm, 148mm, 143mm, 148mm, 215mm) NO Flats, made by DX |
| FZ 3"Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >20,000 Ohmcm, MCC Lifetime>1000μs, (2 ingots: 177mm, 172mm) NO Flats, made by Pluto |
| FZ 2"Ø ingot P/B[100] ±2.0°, Ro: 1-2 {1.29-1.32} Ohmcm, MCC Lifetime>1777μs, (2 ingots: 58mm, 84mm) NO Flats, made by SilChm |
| FZ 2"Ø×(132+124+124+123+115+107+100+99)mm ingots, P/B[100] ±2°, (1,000-3,000)Ohmcm, 1 SEMI Flat, made by Pluto |
| FZ 2"Ø×64.5mm ingot P/B[100]±2°, (2,879-3,258)Ohmcm, NO Flats, made by CSW |
| FZ 2"Ø×38mm ingot, P/B[100]±2°, Ro:~2,900Ohmcm, 1 SEMI Flat, made by SPC |
| FZ 2"Ø×(392+342+304+263+250+128)mm ingots, P/B[111]±2°, (2,000-5,000)Ohmcm, 1 SEMI Flat, made by SiT |
| FZ 2"Ø×(100+87+86+85+85+84)mm ingots, n-type Si:P[111], (2,000-4,000) {2,166-3,835} Ohmcm, NO Flats, made by Pluto |
| FZ 2"Ø×26mm ground ingot, n-type Si:P[111]±2°, (5,000-13,000)Ohmcm, MCC Lifetime>1,100μs, NO Flats, made by PHTS |
| FZ 2"Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, MCC Lifetime>1,000μs, Ground, (9 ingots: 85mm, 84mm, 68mm, 84mm, 85mm, 70mm, 131mm, 131mm, 129mm) NO Flats, made by DX |
| FZ 2"Ø ingot Intrinsic Si:-[111] ±0.5°, Ro: >20,000 Ohmcm, Ground, NO Flats, made by DX |
| FZ 1.75"Ø ingot n-type Si:P[100] ±2.0°, Ro: 6,345-7,698 Ohmcm, (1 ingot: 0.28Kg, 75mm, $300 for the piece) MCC Lifetime>7500μs, NO Flats, made by SilChm |
| FZ 1.5"Ø ingot n-type Si:P[100] ±2.0°, Ro: 6,345-7,698 Ohmcm,(2 ingots: 0.20Kg, 75mm, $250 for each piece) MCC Lifetime>7500μs, NO Flats, made by SilChm |
| FZ 1"Ø ingot P/B[100] ±2°, Ro:1-3 Ohmcm, (5 ingots: 76mm, 80mm, 80mm, 82mm, 82mm) NO Flats, Lifetime=300μs. made by SPC |
| FZ P/B[100] ±2°, Ro:1-3Ohmcm, (1 ingot: 81mm total, of which 21mm is usable), Improperly cored (total cost = $90) |
| FZ 1"Ø ingot P/B[100], Ro: 2,652-2,743 Ohmcm, 7 pieces, each 0.17Kg and 145 long. $150/piece, made by SilChm |
| FZ 1"Ø ingot P/B[100] ±2°, Ro:3,400-4,100Ohmcm, Ground, (3 ingots: 75mm, 76mm, 77mm) SEMI, 1Flat, made by ITME |
| FZ 1"Ø ingot P/B[100] ±2.0°, Ro: 120-130 Ohmcm, MCC Lifetime>8025μs, 6 pieces, each 0.06Kg and 50mm long. $150/piece NO Flats, made by SilChm |
| FZ 1"Ø ingot P/B[100] ±2.0°, Ro: 2,879-3,258 Ohmcm, (1 ingot: 31mm, 0.05Kg, $200 for the piece) NO Flats, made by CSW |
| FZ 1"Ø ingot n-type Si:P[100] ±2°, Ro: ~2.7 Ohmcm, Ground, (5 ingots: 38mm, 37mm, 38mm, 37mm, 38mm), made by CSW, 5 pieces, each 0.05Kg and 37cmm long. $100/piece |
| FZ 1"Ø ingot n-type Si:P[100] ±2.0°, Ro: 6,345-7,698 Ohmcm, (3 ingots: 0.09Kg, 75mm, $200 for each piece) MCC Lifetime>7500μs, NO Flats, made by SilChm |
| FZ 1Ø×60mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm, NO Flats, made by SilChm |
| FZ Silicon Ingot, 48mmØx217mm, n-type Si:P[111], Ro=~300 Ohmcm, (p-type Ro>3,000 Ohmcm), NO Flats, made in TARNOW, Poland |
| FZ 1"Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, NO Flats, Each piece is 98mm long and $500 total |
| FZ 1"Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >17,500 Ohmcm, (2 ingots: 34.5mm, 29mm, $500 for each piece) NO Flats, made by CSW |
| FZ 6.35mmØ ingot Intrinsic Si:-[111], Ro: >10,000 Ohmcm, (1 lot of 8 rods, each 51mm long) made by CSW |
| FZ 6.35mmØ ingot Intrinsic Si:-[111], Ro: >10,000 Ohmcm, (1 lot of 11 rods, each ranging from 15mm to 49mm long) made by CSW |
| FZ 0.5"Ø×110mm ingot, n-type Si:P[100], Ro: 5,497-10,293 Ohmcm, MCC Lifetime>6,500μs. made by SilChm, 10 pieces, each piece is 0.5"Ø, 0.029Kg and 100mm long ($200.00 each). |
| FZ SCRAP material p-type, Ro: 1,000-10,000 Ohmcm |
| FZ SCRAP material p-type, Ro: 1-1,000 Ohmcm |
| FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm |
| FZ SCRAP material n-type, Ro: 1-1,000 Ohmcm |
| FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm |
| 6"Ø ingot P/B[100] ±2.0°, Ro: 0.001-0.005 Ohmcm, Ground, (1 ingot: 40mm) NO Flats, made by Prolog |
| 6"Ø ingot P/B[100], Ro: 10-35 Ohmcm, Ground, (1 ingot: 62mm) 1Flat, made by Prolog |
| 6"Ø ingot P/B[100], Ro: 10-15 Ohmcm, Ground, (1 ingot: 140mm) 1Flat, made by Prolog |
| 6"Ø ingot P/B[100], Ro: 0.01-0.02 Ohmcm, Ground, (1 ingot: 184mm) 1Flat, made by Prolog |
| 6"Ø ingot P/B[110], Ro: 18.5-23.5 Ohmcm, on Graphite rail 165° from flat,(1 ingot: 137mm) 1 SEMI Flat, made by Prolog |
| 6"Ø ingot P/B[100], Ro: 1-10 Ohmcm, (1 ingot: 21mm) NO Flats, made by Antek |
| 6"Ø ingot P/B[100], Ro: 0.829-0.925 Ohmcm, (1 ingot: 187mm) 2Flats, made by Prolog |
| 6"Ø ingot P/B[100], Ro: 0.555-0.601 Ohmcm, (1 ingot: 104mm) 1Flat, made by Prolog |
| 6"Ø ingot P/B[110], Ro: >10 Ohmcm, (1 ingot: 183mm) NO Flats, made by Prolog |
| 6"Ø ingot P/B[111] ±2.0°, Ro: 0.010-0.025 Ohmcm, (1 ingot: 265mm) NO Flats, made by Prolog |
| 6"Ø ingot n-type Si:Sb[100] ±2.0°, Ro: 0.01-0.02 Ohmcm, (1 ingot: 250mm) NO Flats, made by Prolog |
| 6"Ø×318mm ingot n-type Si:As[100], Ro=(0.0037-0.0052)Ohmcm, SEMI Flat (1), made by Crysteco #6450-1182 |
| 6"Ø×12mm ingot, n-type Si:P[100], (6.76-10.28)Ohmcm, NO Flats, made by Prolog |
| 6"Ø ingot n-type Si:P[100], Ro: 10-35 Ohmcm, Ground, (4 ingots: 135mm, 336mm, 101mm, 428mm) NO Flats, made by Prolog |
| 6"Ø×140mm ingot n-type Si:As[100], Ro=(0.0048-0.0055)Ohmcm, SEMI Flats (2), made by Crysteco #1450-1017, Note: Secondary Flat 135° from Primary |
| 6"Ø×330mm ingot n-type Si:As[100], Ro=(0.0040-0.0054)Ohmcm, SEMI Flat (1), made by Crysteco #6450-186A |
| 6"Øx254mm ingot n-type Si:As[100], Ro=(0.0038-0.0049)Ohmcm, SEMI Flat (1), made by Crysteco #4899-10 |
| 6"Ø×(20+300)mm, n-type Si:As[100], Ground, made by Crysteco#6450 (2 ing: 28a(NoF), 28c(135°F)) |
| 6"Ø ingot n-type Si:P[100], Ro: 10-35 Ohmcm, Ground, (1 ingot: 360mm) NO Flats, made by Prolog |
| 6"Øx50mm ingot n-type Si:As[100], Ro=(0.0033-0.0037)Ohmcm, SEMI Flat (1), made by Crysteco #7001-1B |
| 6"Øx114mm ingot n-type Si:As[100], Ro=~0.0025Ohmcm, SEMI Flats (2), made by Crysteco #9035-56, Note: Secondary Flat 135° from Primary |
| 6"Ø ingot n-type Si:P[111] ±2°, Ro: 20-30 Ohmcm, (1 ingot: 50mm) 1Flat, made by Prolog |
| 6"Ø ingot n-type Si:P[111] ±2.0°, Ro: 0.001-0.002 Ohmcm, Ground, (6 ingots: 295mm, 230mm, 229mm, 273mm, 247mm, 162mm) SEMI, 2Flats, made by Topsil |
| 6"Ø ingot n-type Si:P[111] ±2°, Ro: 20-30 Ohmcm, (1 ingot: 257mm) NO Flats, made by Prolog |
| 5"Ø×273mm ingot n-type Si:As[100], Ro=(0.0024-0.0040)Ohmcm, As-Grown, made by Crysteco #C991/59 |
| 5"Ø×546mm ingot n-type Si:As[100], Ro=(0.0032-0.0058)Ohmcm, As-Grown, made by Crysteco #4761-3305 |
| 5"Ø×340mm ingot n-type Si:As[100], Ro=(0.0032-0.0044)Ohmcm, As-Grown, made by Crysteco #C991/56 |
| 5"Ø×388mm ingot n-type Si:As[100], Ro=(0.0029-0.0044)Ohmcm, As-Grown, made by Crysteco #.C991/64 |
| 5"Ø×380mm ingot n-type Si:As[100], Ro=(0.0025-0.0043)Ohmcm, SEMI Flat (1), made by Crysteco #C991/32 |
| 5"Ø×305mm ingot n-type Si:As[100], Ro=(0.0025-0.0043)Ohmcm, SEMI Flat (1), made by Crysteco #4761-2218 |
| 5"Ø×330mm ingot n-type Si:As[100], Ro=(0.0022-0.0040)Ohmcm, As-Grown, made by Crysteco #C991/58 |
| 5"Ø×375mm ingot n-type Si:As[100], Ro=(0.0021-0.0039)Ohmcm, As-Grown, made by Crysteco #C991-31 |
| 5"Ø (5 ingots: 540mm, 254mm, 607mm, 644mm, 201mm), n-type Si:As[100], (0.001-0.007)Ohmcm, As-Grown, made by Crysteco |
| 5"Ø×290mm ingot n-type Si:As[100], Ro=(0.0032-0.0051)Ohmcm, As-Grown, made byCrysteco #C991/57 |
| 5"Ø×420mm n-type Si:As[100], Ro=(0.0032-0.0034)Ohmcm, As-Grown, made by Crysteco #C991-25 |
| 5"Ø×416mm ingot n-type Si:As[100], Ro=(0.0024-0.0029)Ohmcm, As-Grown, made by Crysteco #C991/55 |
| 5"Ø×51mm ingot n-type Si:Sb[111], Ro=(0.0135-0.0142)Ohmcm, SEMI Flats (2), made by Crysteco |
| 5"Ø ingot n-type Si:P[111] ±2°, Ro: 0.089-1.500 Ohmcm, Ground, (1 ingot: 215.9mm) NO Flats, made by Cryst |
| 5"Ø×200mm ingot n-type Si:As[111], (0.001-0.005)Ohmcm, SEMI, 2Flats, made by Crysteco |
| 5"Ø×364mm ingot n-type Si:As[111] ±2°, Ro=(0.0016-0.0021)Ohmcm, SEMI Flats (2), made by Crysteco #C991-63 |
| 4"Ø ingot P/B[100] ±2°, Ro: 0.001-0.005 Ohmcm, Ground, (1 ingot: 126mm) 1Flat, made by Prolog |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 0.015-0.020 Ohmcm, As-Grown, (1 ingot: 83mm) 1Flat, made by Prolog |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 0.001-0.003 Ohmcm, Ground, NO Flats, Visible Striation marks(2 ingots: 108mm, 150mm) NO Flats, made by Prolog |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 0.5-0.6 Ohmcm, (1 ingot: 112mm) 1Flat, made by Prolog |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 0.5-0.6 Ohmcm, (1 ingot: 250mm) NO Flats, made by Prolog |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 0.1-0.2 Ohmcm, (2 ingots: 60mm, 106mm) NO Flats, made by Prolog |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 0.1-0.5 Ohmcm, Ground, (1 ingot: 434mm) NO Flats, made by Prolog |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 0.001-0.003 Ohmcm, Ground, (1 ingot: 220mm) SEMI, 1Flat, made by Xiamen |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 1-100 Ohmcm, Ground, (1 ingot: 319mm) SEMI, 1Flat, made by Topsil |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 5-10 Ohmcm, Ground, (1 ingot: 196mm) NO Flats, made by Prolog |
| 4"Ø ingot P/B[100] ±2°, Ro: 0.001-0.005 Ohmcm, Ground, (1 ingot: 19mm) 1Flat, made by Gener |
| 4"Ø×219mm P/B[110]±1.5°, (59-67)Ohmcm, RRV<2.4%, One SEMI Flat, Diameter=(100.6-100.8) mm, C<3E16/cc, O2<9E17/cc; made in Russia |
| 4"Ø ingot P/B[110] ±2°, Ro: 0.001-0.010 Ohmcm, Ground, SEMI, 1Flat, |
| 4"Ø ingot P/B[110] ±2.0°, Ro: 1-5 Ohmcm, Ground, (1 ingot: 69mm) 1Flat, made by Prolog |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 0.025-0.035 Ohmcm, Ground, (1 ingot: 194mm) 1Flat, made by Prolog |
| 4"Ø ingot P/B[110] ±2.0°, Ro: 1-5 Ohmcm, Ground, (1 ingot: 41mm) 1Flat, made by Prolog |
| 4"Ø ingot P/B[100] ±2.0°, Ro: 30-80 Ohmcm, Ground, (2 ingots: 50mm, 182mm) NO Flats, made by Prolog |
| 4"Ø ingot P/B[111] ±2.0°, Ro: 0.001-0.005 Ohmcm, Ground, (2 ingots: 32mm, 90mm) 1Flat, made by Prolog |
| 4"Ø×(504+504+523+147+144)mm, P/B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F)) |
| 4"Ø ingot P/B[111], Ro: 0.010-0.015 Ohmcm, (1 ingot: 159mm) , made by GenerR |
| 4"Ø ingot n-type Si:P[100], Ro: 4-6 Ohmcm, Ground, (2 ingots: 18mm, 115mm) NO Flats, made by Prolog |
| 4"Ø ingot n-type Si:P[100] ±3°, Ro: 0.05-0.15 {0.130-0.145} Ohmcm, (4 ingots: 234mm, 231mm, 167mm, 294mm) NO Flats, made by Prolog |
| 4"Ø ingot n-type Si:P[100] ±3°, Ro: 4-6 Ohmcm, Ground, (1 ingot: 25mm) SEMI, 1Flat, made by Prolog |
| 4"Ø ingot n-type Si:P[111] ±2.0°, Ro: 3-9 Ohmcm, Ground, NO Flats, made by Prolog |
| 4"Ø ingot n-type Si:Sb[100], Ro: 0.010-0.023 Ohmcm, (1 ingot: 38.1mm) , made by CSW |
| 4"Ø ingot n-type Si:Sb[111] ±2.0°, Ro: 0.01-0.02 Ohmcm, Ground, (3 ingots: 398mm, 342mm, 348mm) SEMI, 2Flats, made by Topsil |
| 4"Ø×(453+147+135)mm ingots, n-type Si:Sb[111] (0.050-0.090)Ohmcm, SEMI Flats(2), made by Motorola |
| 4"Ø ingot n-type Si:P[111] ±3°, Ro: 10-30 Ohmcm, MCC Lifetime>0μs, (1 ingot: 28mm) 1Flat, made by Prolog |
| 4"Ø ingot n-type Si:P[111], Ro: 0.15-0.55 Ohmcm, (2 ingots: 73mm, 80mm) 2Flats, made by Motoro |
| 4"Ø ingot n-type Si:Sb[111] ±2°, Ro: 0.01-0.02 Ohmcm, Ground, (2 ingots: 31mm, 143mm) NO Flats, made by Prolog |
| 4"Ø×227mm, n-type Si:As[111], Ingot As-Grown, made by Crysteco#7227 (13b) |
| 3"Ø×194mm ingot, P/B[100]±3°, Ro:>20 Ohmcm, SEMI Flat(one), made by Prolog |
| 3"Ø×174mm p-type Si:Ga[100] (1.77-2.13)Ωcm, Ingot "As-Grown", (82-85)mmØ, RRV=8%, Oxygen=6.2E17/cc; Made by ITME |
| 3"Ø ingot P/B[211] ±2°, Ro: 1-10 Ohmcm, Ground, (1 ingot: 36mm) 1Flat, made by CSW |
| 3"Ø ingot P/B[111] ±0.5°, Ro: 1-10 Ohmcm, As-Grown, (3 ingots: 217mm, 32mm, 169mm) 2Flats, made by ITME |
| 3"Ø ingot P/B[112], Ro: 0.001-0.005 Ohmcm, (1 ingot: 76mm) 1Flat, made by Umicor |
| 3"Ø ingot P/B[112], Ro: 0.001-0.005 Ohmcm, (1 ingot: 76mm) 1Flat, made by Umicor |
| 3"Ø ingot n-type Si:P[100] ±2°, Ro: 1.25-2.50 Ohmcm, Ground, (3 ingots: 57mm, 144mm, 370mm) SEMI, 1Flat, made by Prolog |
| 3"Ø ingot n-type Si:As[111] ±2.0°, Ro: 0.002-0.004 Ohmcm, Ground, (6 ingots: 246mm, 178mm, 194mm, 241mm, 397mm, 260mm) SEMI, 2Flats, made by Topsil |
| 3"Ø ingot n-type Si:Sb[100], Ro: 0.01-0.02 Ohmcm, (1 ingot: 280mm) 2Flats (2nd flat is 140° from primary) |
| 2.5"Ø ingot P/B[111], Ro: >1 Ohmcm, (1 ingot: 83mm) NO Flats, made by USA |
| 2"Ø ingot n-type Si:P[100] ±2°, Ro: 10-35 Ohmcm, (4 ingots: 22.5mm, 20.2mm, 19.2mm, 19.8mm) NO Flats, made by CSW |
| 2"Ø ingot P/B[100], Ro: 0.0150-0.0165 Ohmcm, Ground, (2 ingots: 72mm, 72mm) SEMI, 2Flats, made by Cryst |
| 2"Ø ingot P/B[110] ±2.0°, Ro: 10-20 Ohmcm, (1 ingot: 36mm) NO Flats, made by Prolog |
| 2"Ø ingot P/B[111] ±2°, Ro: 1-10 Ohmcm, Ground, (1 ingot: 45mm) NO Flats, made by CSW |
| 2"Ø ingot n-type Si:P[100], Ro: <20 Ohmcm, Ground, SEMI, 1Flat, made by SPC |
| 2"Ø ingot n-type Si:P[111] ±2°, Ro: 20-30 Ohmcm, (2 ingots: 50mm, 50mm) NO Flats, made by Prolog |
| 2"Ø ingot Si[100] ±2°, Ro: Ohmcm, As-Grown, made by SPC |
| 1"Ø ingot P/B[100] ±2°, Ro: 5-35 Ohmcm, Ground, 3 pieces, each 0.08Kg and 66mm long. $150/piece NO Flats NO Flats, made by Prolog |
| 1"Ø ingot P/B[100], Ro: 0.0150-0.0165 Ohmcm, Ground, (Each piece is ~0.09Kg and costs $150 for the piece, 4 ingots: 72mm, 72mm, 67mm, 67mm) SEMI, 2Flats, made by CSW |
| 1"Ø ingot P/B[110] ±2.0°, Ro: 1-5 Ohmcm, 5 pieces, each 0.12Kg and 99mm long. $150/piece NO Flats |
| 1"Ø ingot P/B[111], Ro: 0.04-0.06 Ohmcm, Ground, (1 ingot: 102mm) NO Flats, made by Matpur |
| 1"Ø ingot n-type Si:As[110] ±0.5°, Ro: 0.001-0.005 Ohmcm, (3 ingots: 119mm, 117mm, 127mm) SEMI, 1Flat, Empak cst, made by CSW, 3 Ingots, each 0.15Kg, 117mm and $200 |
| 25.4Ø ingot n-type Si:As[100] ±2.0°, Ro: 0.001-0.005 Ohmcm, NO Flats, made by CSW, Each piece is 100±1mm long, 0.12Kg and costs $250 each |
| 1"Ø ingot n-type Si:Sb[100] ±2°, Ro: 0.0176-0.0180 Ohmcm, Ground, NO Flats, made by CSW, (b)2 Pieces available, each 0.14Kg, $200 and more than 76mm long(/b) |
| 1"Ø ingot n-type Si:Sb[100], Ro: 0.0118-0.0132 Ohmcm, Each ingot 0.06Kg, 52mm and $100 for piece(4 ingots: 52mm, 52mm, 52mm, 52mm) NO Flats, made by Prolog |
| 1"Ø ingot n-type Si:P[100] ±3°, Ro: 0.05-0.15 Ohmcm, NO Flats, made by CSW, 5 pieces, each 0.06Kg and 52mm long. $150/piece |
| 1"Ø ingot n-type Si:Sb[111], Ro: 0.05-0.09 Ohmcm, (1 ingot: 136mm) SEMI, 2Flats, |
| 1"Ø ingot n-type Si:P[111] ±2°, Ro: 20-30 Ohmcm, 3 pieces, 0.06Kg and 50 long. $100/piece) No Flats, made by Prolog |
| 1"Ø ingot n-type Si:P[111], Ro: 15-22 Ohmcm, NO Flats, 3 pieces each 0.09Kg, 77.5mm long, $200/piece, made by CSW |
| 1"Ø ingot n-type Si:Sb[111], Ro: 0.05-0.09 Ohmcm, (3 ingots, each 1"Ø, 0.071Kg, 59mm long and costs $150, made by Motorola |
| CZ SCRAP material p-type, Ro: 1-1,000 Ohmcm |
| CZ SCRAP material n-type, Ro: 1-1,000 Ohmcm |
| CZ SCRAP material CZ mix of n-type and p-type, Ro<1 Ohmcm |
| 1"Ø ingot n-type Si:Sb[100], Ro: 0.010-0.023 Ohmcm, (7 ingots: 108mm, $200 total for each 108mm piece), aro 1-2 wks , made |
Important Czochralski Terms
Below are some imporant terms related to the Czochralski ingot growth method.
- crystallized silicon
- silicon crystals
- crystal growth
- silicon wafers
- silicon boules
- molten silicon
- crystallographic Oris
- silicon melt
- semiconductor materials
- quartz crucibles
- crystal quality
- crystal boules
- czochralski crystal
- polycrystalline silicon
- #semiconductor manufacturing
What is the Czochralski (CZ) Process?
The Czochralski (CZ) process is the most widely used method for producing single-crystal silicon wafers used throughout the semiconductor industry. During crystal growth, a small seed crystal is dipped into molten silicon and slowly pulled upward while rotating. As the crystal grows, it forms a large cylindrical silicon ingot that can later be sliced into wafers.
How CZ Silicon Wafers Are Manufactured
The process begins with ultra-high-purity polysilicon loaded into a quartz crucible. The silicon is melted at approximately 1,414°C and dopants may be added to achieve specific electrical properties. A seed crystal is introduced into the melt and carefully pulled upward while rotating.
The pulling speed, temperature, and rotation rate are tightly controlled to produce a uniform crystal diameter and crystal orientation. The resulting silicon ingot is then ground, sliced, lapped, etched, polished, and inspected to create semiconductor-grade wafers.
Advantages of CZ Silicon Wafers
- Available in diameters from 1 inch to 300 mm and larger.
- Lower manufacturing cost than Float Zone silicon.
- Excellent crystal uniformity.
- Suitable for high-volume semiconductor production.
- Widely used for solar cells, MEMS, sensors, and integrated circuits.
- Available with multiple orientations including <100>, <111>, and <110>.
CZ Silicon vs Float Zone (FZ) Silicon
Researchers frequently compare Float Zone (FZ) silicon wafers with CZ-grown wafers. While CZ silicon is more economical and widely available, Float Zone silicon offers significantly lower oxygen content and higher resistivity.
| Property | CZ Silicon | Float Zone Silicon |
|---|---|---|
| Cost | Lower | Higher |
| Oxygen Content | Higher | Very Low |
| Maximum Resistivity | Moderate | Very High |
| Wafer Availability | Excellent | More Limited |
| Solar Cells | Excellent | Limited |
| Power Devices | Common | Specialized |
| Particle Detectors | Limited | Preferred |
Applications of Czochralski Silicon Wafers
CZ silicon wafers are used in a wide variety of semiconductor and research applications:
- Integrated circuits (ICs)
- MEMS devices
- Power electronics
- CMOS image sensors
- Solar cells
- Microelectronics research
- Photonic devices
- Semiconductor manufacturing
- Wafer bonding and epitaxy
Silicon Ingot Specifications Available
UniversityWafer, Inc. supplies CZ-grown silicon wafers and silicon ingots with a variety of specifications including:
- Diameters from 1" to 12"
- P-type and N-type doping
- Undoped high-resistivity silicon
- <100>, <111>, and <110> crystal orientations
- Single-side polished (SSP)
- Double-side polished (DSP)
- Prime, test, and research grades
Why Researchers Choose CZ Silicon
Because of its excellent availability, lower cost, and well-established manufacturing process, CZ-grown silicon remains the dominant substrate material used by semiconductor manufacturers, universities, national laboratories, and research organizations worldwide. It provides a reliable foundation for device fabrication, MEMS development, solar energy research, and advanced microelectronics applications.