Request Your Indium Arsenide (InAs) Wafers Today
UniversityWafer provides Indium Arsenide (InAs) wafers for infrared, quantum, and high-speed device fabrication. Choose from (100) or (111B) orientations, n- or p-type doping, and epi-ready surfaces prepared for MBE or MOCVD growth.
Need ultra-clean III–V wafers for your research?
Get Your InAs Substrate Quote FAST! Or, Buy Online and Start Researching Today!
Popular III–V Substrates
- InAs — High mobility, narrow bandgap, ideal for IR and quantum devices
- GaSb — Perfect for mid-infrared lasers and detectors
- InSb — Ultra-low bandgap for Hall sensors and IR imaging
- GaAs — General-purpose III–V platform, good lattice match to AlGaAs
When to Choose InAs
- Infrared photonics — mid-IR detectors, imaging arrays
- High-speed electronics — HEMTs, quantum tunneling devices
- Quantum R&D — topological materials and hybrid nanostructures
- Heteroepitaxy — template for GaSb, InSb, or AlSb systems
Recommended Surface Options
- Epi-ready SSP — single-side polish for MBE/MOCVD
- DSP — double-side polish for optical studies
- Miscut wafers — improve step-flow epitaxy
Handling & Safety
- Handle only with gloves and cleanroom tools
- Avoid mechanical stress on polished surfaces
- Dispose of III–V waste following EHS guidelines
Understanding Indium Arsenide (InAs) Wafers
Indium Arsenide (InAs) is a III–V compound semiconductor known for its narrow bandgap(~0.36 eV at 300 K) and very high electron mobility. These unique properties make it ideal for infrared detection, high-speed transistors, and quantum device research. InAs wafers are widely used in photodetectors, Hall sensors, and epitaxial templates for advanced III–V structures.
Material Properties
- Crystal Structure: Zinc blende (cubic)
- Lattice Constant: 6.0583 Å
- Electron Mobility: ≈ 33,000 cm²/V·s at 300 K
- Bandgap Energy: 0.36 eV (direct bandgap)
- Thermal Expansion Coefficient: 4.52 × 10⁻⁶ K⁻¹
The high mobility and narrow gap enable strong carrier confinement and efficient tunneling, making InAs a foundation for quantum wells, high-electron-mobility transistors (HEMTs), and mid-infrared optoelectronics.
Available Specifications
- Diameter: 2–3 inch standard, custom sizes on request
- Orientation: (100) and (111B)
- Doping: n-type (Si, Te, Sn), p-type (Zn, Be), or undoped
- Surface: Single- or Double-Side Polished (SSP/DSP)
- Grade: Research and device quality, epi-ready
All wafers are delivered epi-ready with low surface roughness and controlled contamination levels suitable for MBE or MOCVD epitaxy. Optional miscut angles improve step-flow growth in heterostructure stacks.
Applications
- Infrared detectors and focal plane arrays
- High-speed and low-noise electronic devices
- Quantum well and superlattice structures
- THz and mid-infrared optoelectronic devices
- Heteroepitaxy with GaSb, InSb, and AlSb
The (100) orientation is preferred for most epitaxial growth due to its predictable surface reconstructions, while (111B) offers arsenic-terminated planes advantageous for specific MBE conditions. Both are supplied with ultra-flat polish for high-yield layer deposition.
Surface Preparation & Handling
InAs wafers are supplied in cleanroom-sealed packaging and handled under controlled environments to maintain mirror-grade finishes. Edge rounding and beveling options reduce chipping risk.
- RMS Roughness: Typically below 0.5 nm
- Packaging: Vacuum-sealed or clean clamshell containers
- Storage: Keep in dry, inert conditions
Since InAs contains arsenic, wafers should be processed using standard semiconductor safety practices—wear gloves, avoid abrasive contact, and follow EHS disposal guidelines.
Comparison with Related III–V Substrates
| Material | Bandgap (eV) | Mobility (cm²/V·s) | Key Use |
|---|---|---|---|
| InAs | 0.36 | ~33,000 | IR, HEMTs, quantum devices |
| GaSb | 0.73 | ~8,500 | Mid-IR diodes and detectors |
| InSb | 0.17 | ~77,000 | Extreme IR, Hall sensors |
Ordering & Customization
UniversityWafer provides standard and custom InAs wafers for both R&D and production environments. When requesting a quote, include the following:
- Diameter and thickness
- Orientation and miscut angle (if any)
- Doping type and target resistivity
- Surface (SSP/DSP) and epi-ready polish
- Quantity and packaging requirements