Gallium Arsenide (GaAs) wafers are widely used in high-speed electronics, RF and microwave devices, photonics, laser diodes, LEDs, and high-efficiency solar cells. UniversityWafer supplies research and production-grade GaAs substrates in multiple diameters, orientations, doping types, and surface finishes, including epi-ready wafers for advanced semiconductor fabrication.
UniversityWafer supplies Gallium Arsenide (GaAs) wafers for research, prototyping, and commercial semiconductor manufacturing. Whether your project involves RF electronics, optoelectronics, photonics, or high-speed integrated circuits, our team can help you select the right GaAs substrate for your application.
Complete the form below with your desired wafer specifications, and one of our wafer specialists will quickly provide pricing, availability, and technical recommendations. We offer both standard inventory and custom-manufactured gallium arsenide substrates.
Recent Research Inquiry
"Our laboratory is developing high-frequency RF devices and requires semi-insulating GaAs wafers with a (100) orientation, epi-ready polish, and a thickness of approximately 625 µm. Can you provide pricing, lead time, and available diameters for research quantities?"
Please include your required diameter, orientation, doping type, surface finish, thickness, quantity, and any additional processing requirements in the request form. Our engineers will respond with a custom quote tailored to your project.
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Gallium Arsenide (GaAs) is a high-performance III-V semiconductor widely used in RF electronics, optoelectronics, photonics, and high-speed integrated circuits. Compared to silicon, GaAs provides significantly higher electron mobility and a direct bandgap, making it ideal for applications requiring fast switching speeds, high-frequency operation, and efficient light emission.
Researchers choose GaAs wafers because they combine excellent electrical and optical performance with reliable crystal quality. These substrates are commonly used for epitaxial growth by MBE and MOCVD and are available in semi-insulating, n-type, and p-type configurations for a variety of semiconductor devices.
| Property | Benefit |
|---|---|
| High Electron Mobility | Supports ultra-fast electronic devices |
| Direct Bandgap | Excellent for LEDs and laser diodes |
| High Frequency Performance | Ideal for RF and microwave applications |
| Low Noise Characteristics | Improves communication system performance |
| Epi-Ready Surfaces Available | Suitable for advanced epitaxial growth |
UniversityWafer supplies GaAs substrates in multiple diameters, orientations, thicknesses, and doping types to support both research and production. Prime, test, and epi-ready grades are available with single-side or double-side polished finishes. Custom specifications can be manufactured to meet the requirements of advanced semiconductor, photonic, and optoelectronic device fabrication.