SiNx + Si + SiNx wafer stack with undoped silicon, 4" diameter, 200 µm silicon thickness, 50 nm SiNx thickness on each side, <100> orientation, polished/polished surface, and the highest resistivity possible.
SiNx Wafers for MEMS, Photonics and Semiconductor Research
MEMS researchers use silicon nitride coatings for suspended membranes, resonators, cantilevers and sensor structures. Appropriate stress control is important for thin membranes, including those used for microfluidics, nanopore research and microscopy. For layered processes, SOI wafers and silicon nitride on silicon may be evaluated as alternative substrate structures.
Need only one wafer for a prototype? Browse the UniversityWafer online store or request a quote for custom SiNx films and substrates.
A researcher requested a quote for the following SiNx wafer stack:
This example double-side silicon nitride coated wafer uses a SiNx/Si/SiNx structure. Similar designs are requested for MEMS membrane fabrication, microfluidic sensors, isolation layers and thin-film stress characterization. Film stress, uniformity and process compatibility should be checked before choosing the nitride deposition method.
Reference #271261 for specifications and pricing.
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What Are SiNx Wafers?
SiNx wafers are silicon wafers coated with silicon nitride, a dielectric film used in semiconductor passivation, diffusion barriers, microfabrication and optical structures. The notation SiNx covers different silicon-to-nitrogen compositions; stoichiometric silicon nitride is Si3N4. Common deposition methods include LPCVD (low-pressure chemical vapor deposition) and PECVD (plasma-enhanced chemical vapor deposition), selected for their different thermal budgets, film stress and dielectric characteristics.
Depending on film composition and deposition, silicon nitride can provide electrical insulation, chemical resistance and a mechanically robust surface. It is used for CMOS fabrication, MEMS sensors, photonic devices, and research involving thin-film deposition.
Applications of SiNx Wafers
- MEMS membranes, pressure sensors and microfabrication
- Semiconductor device passivation and dielectric isolation
- CMOS and integrated circuit fabrication
- Thin-film deposition and stress studies
- Microfluidic channels, biosensors and nanopore devices
- Silicon nitride photonic waveguides and optical resonators
- Solar cell antireflection and surface-passivation films
- Optical coatings, dielectric barriers and etch masks
Why Use Silicon Nitride (SiNx)?
Compared with silicon dioxide (SiO2), silicon nitride may offer greater resistance to moisture transport and certain chemicals and a mechanically strong dielectric layer. Actual properties vary with the SiNx composition, film thickness and deposition process, especially for low-stress or hydrogen-containing films.
Silicon nitride coatings also serve as oxidation masks and diffusion barriers in semiconductor processing. For membrane or photonic applications, specify refractive index, residual film stress, uniformity and surface roughness—not only the nominal SiNx thickness.
Typical SiNx Wafer Specifications
When requesting custom silicon nitride on silicon wafers, the following specifications help determine substrate compatibility and quotation details. See also stoichiometric silicon nitride wafers and PECVD silicon nitride coatings.
- Silicon wafer diameter (for example, 2, 4, 6, 8 or 12 inches, subject to availability)
- Silicon crystal orientation: <100> or <111>
- Undoped, P-type or N-type substrate and target resistivity
- LPCVD or PECVD SiNx film deposition
- Target nitride thickness, thickness tolerance and film uniformity
- Single-side or double-side SiNx coating (SiNx/Si/SiNx)
- Single-side polished (SSP) or double-side polished (DSP)
- Film stress, refractive index, surface roughness and wafer thickness
SiNx Wafers for MEMS and Sensor Research
Researchers frequently use SiNx wafers for pressure sensors, accelerometers, resonators, cantilevers, microfluidic devices, biosensors, and other MEMS structures because silicon nitride combines excellent mechanical strength with outstanding dielectric properties. Thin SiNx membranes are also widely used in electron microscopy, X-ray analysis, and nanopore sensing.
Silicon Nitride for Semiconductor Manufacturing
Silicon nitride dielectric films are used in integrated circuit processing for passivation, oxidation masks, etch stops and electrical isolation. PECVD silicon nitride offers a lower-temperature deposition route for some completed device stacks, while LPCVD films are commonly selected when dense coatings and suitable high-temperature process conditions are needed. Learn more about dielectric properties and thin-film processing.
LPCVD vs. PECVD SiNx Wafers: Which Should You Choose?
LPCVD silicon nitride is often selected for dense dielectric films, oxidation masks and membrane structures when the substrate can tolerate its higher processing temperatures. PECVD silicon nitride is useful when lower deposition temperatures or adjustable film properties are required. Compare film stress, composition, deposition temperature and optical properties before choosing a coating.
How to Order Custom SiNx Coated Silicon Wafers
For a quotation, provide the wafer diameter, substrate thickness, crystal orientation, doping/resistivity, silicon nitride thickness, LPCVD or PECVD method, single- or double-side coating, and required film stress. Mention whether the wafers will be used for MEMS membranes, dielectric passivation, photonics or another research process. Browse available wafers online or use the request form to describe custom specifications.
Related Silicon Nitride Resources
- Dielectric Constant of Semiconductor Materials
- MEMS Substrates
- PECVD Silicon Nitride Wafers
- Silicon Nitride on Silicon Wafers
- Silicon-on-Insulator (SOI) Wafers
- Silicon Wafers
- Stoichiometric Silicon Nitride Wafers
- Thermal Oxide Silicon Wafers
- Thin Film Deposition
- Wafer Bonding
- LPCVD vs PECVD SiNx Films