Five N-type silicon wafers, five degenerately doped N-type wafers, five P-type wafers, and five undoped silicon substrates with diameters between 3cm and 5cm for comparative device research.
100mm Undoped Silicon Wafers In Stock
We currently have over 1,000 undoped silicon wafers available for immediate shipment.
100mm Undoped (100) >20,000 Ω-cm SSP 500µm Prime Grade
Purchase as few as one wafer or request volume pricing for your research project.
Undoped Silicon Wafers for Research and Development
Undoped silicon wafers, also known as intrinsic silicon wafers, are widely used in semiconductor research, photonics, MEMS fabrication, materials science, and advanced device development. Their extremely low impurity levels make them ideal for experiments that require high resistivity, long carrier lifetimes, and precise electrical characterization.
A Ph.D. researcher requested the following substrate specifications:
Reference #247557 for specifications and pricing.
UniversityWafer, Inc. maintains a large inventory of undoped silicon wafers available in multiple diameters, orientations, resistivities, thicknesses, and surface finishes.
Applications of Undoped Silicon Wafers
Intrinsic silicon substrates are used across a broad range of scientific and industrial applications:
- Solar Cell Research: Undoped silicon serves as a starting material for photovoltaic device development and solar energy research. ```
- Semiconductor Manufacturing: Silicon wafers are used to fabricate integrated circuits, sensors, transistors, and microelectronic devices.
- MEMS and NEMS Devices: High-quality silicon substrates are widely used for microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS).
- Photonics and Optoelectronics: Intrinsic silicon is used in optical experiments, photonic devices, waveguides, and detector development.
- Research and Development: Universities, government laboratories, and industrial R&D facilities use undoped silicon wafers for material characterization, process development, and proof-of-concept devices. ```
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Undoped Silicon for Positron Annihilation Lifetime Spectroscopy (PALS)
Researchers studying crystal defects, vacancy concentrations, and semiconductor material quality often use Positron Annihilation Lifetime Spectroscopy (PALS). For these experiments, high-purity intrinsic silicon wafers with low defect densities and high resistivity are preferred.
One research group utilized the following diced wafer specification:
- 10mm × 10mm diced pieces
- 525µm thickness
- <100> orientation
- Single-side polished (SSP)
- Undoped silicon
- >10,000 Ω-cm resistivity
Custom diced pieces, wafer fragments, and full-diameter undoped silicon wafers are available based on your experimental requirements.
Undoped Float Zone Silicon Wafers for Advanced Research
Undoped silicon wafers, also known as intrinsic silicon substrates, are widely used in semiconductor research, optical systems, MEMS fabrication, photonics, and materials characterization. Researchers often select Float Zone (FZ) silicon wafers because they contain significantly lower oxygen and carbon concentrations than conventional Czochralski-grown silicon, making them ideal for high-purity applications.
UniversityWafer, Inc. supplies high-resistivity undoped silicon wafers in a variety of diameters, thicknesses, orientations, and surface finishes for research laboratories, universities, government facilities, and commercial semiconductor development programs.
Quality Analysis of Float Zone Silicon
Researchers frequently request testing services to evaluate the quality of intrinsic silicon ingots and wafers. Important characterization methods include:
- Carbon concentration analysis
- Oxygen concentration analysis
- Resistivity measurements
- Crystallographic orientation verification
- Etch Pit Density (EPD) testing
- Minority carrier lifetime measurements
- Charge carrier mobility analysis
These measurements help determine whether a silicon substrate is suitable for high-performance semiconductor devices, photonic structures, detectors, and advanced electronic applications.
FTIR Analysis for Carbon and Oxygen Content
Fourier Transform Infrared Spectroscopy (FTIR) is one of the most widely used methods for detecting trace levels of oxygen and carbon in silicon crystals. While room-temperature FTIR measurements are commonly used for oxygen monitoring in Czochralski silicon, cryogenic FTIR measurements performed at liquid helium temperatures can provide significantly greater sensitivity for Float Zone silicon.
Low impurity concentrations are critical for applications requiring ultra-high resistivity, long carrier lifetimes, low defect densities, and superior optical performance. Researchers developing next-generation photonic devices, detectors, and quantum technologies often specify Float Zone silicon for these reasons.
Undoped Silicon for Optical Measurements
Intrinsic silicon wafers are frequently used for optical measurements because they exhibit low impurity levels and excellent material uniformity. Researchers working with infrared systems, nonlinear optics, spectroscopy, and laser-based experiments often require double-side polished silicon wafers to maximize optical performance.
One researcher used undoped DSP silicon as a beam combiner in a nonlinear optical setup where visible and infrared beams needed to remain perfectly aligned. In these applications, surface quality, wafer flatness, crystal orientation, and low contamination levels are essential.
Undoped Silicon with Thermal Oxide Layers
Many research projects require thermal oxide-coated silicon wafers. Silicon dioxide layers can provide electrical insulation, surface passivation, and device isolation while maintaining the excellent mechanical properties of the silicon substrate.
Researchers often request oxide thicknesses ranging from several hundred nanometers to multiple microns depending on their MEMS, photonics, semiconductor, and sensor fabrication requirements.
Applications for Undoped Silicon Wafers
- Semiconductor device development
- MEMS and NEMS fabrication
- Photonic device research
- Infrared optical systems
- Beam combiners and nonlinear optics
- Spectroscopy experiments
- Solar cell research
- Quantum device development
- Sensor fabrication
- Materials characterization studies
Why Choose Float Zone Silicon?
Compared to conventional silicon substrates, Float Zone silicon offers lower oxygen content, lower carbon contamination, higher carrier lifetimes, improved resistivity uniformity, and superior crystal quality. These advantages make it the preferred substrate for many advanced research and development projects.
UniversityWafer, Inc. stocks a large inventory of undoped Float Zone silicon wafers with resistivities exceeding 10,000 Ω-cm and 20,000 Ω-cm, available in SSP and DSP finishes with custom thicknesses and orientations.
Available Undoped Silicon Wafer Specifications
Researchers can select from a variety of intrinsic silicon wafer configurations including:
- <100>, <111>, and custom orientations
- Single-side polished (SSP)
- Double-side polished (DSP)
- Prime, test, and mechanical grades
- Diameters from 25.4mm to 300mm
- High-resistivity Float Zone silicon
- Thermal oxide-coated silicon wafers