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Both 4h and 6h Silicon Carbide (SiC) substrates used when power semiconductors are needed can suffer from micropipe defect density. The greater the defect, the greater the negative affect on the wafer's performace caused by the defect breakdown the voltage, changing thermal conductivity of solid state electronic circuits.
A micropipe is a sustrate surfce flaw that can be found in all substrates. Micropes flaws are hexagonal in shape. This cavity starts on the surface and burrows into the wafer like a pothole. The surface damage caused by micropipes can short circuit an electronic device and or chip causing the device to fail.
Thus, low micropipe denisity results in higher device/chip yields.