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III-V Semiconductor Substrates Guide
What Are III-V Semiconductors?
III-V semiconductors are compounds formed by elements from Group III (e.g., Gallium, Indium, Aluminum) and Group V (e.g., Arsenic, Phosphorus, Nitrogen) of the periodic table. They are widely used in high-speed, high-frequency, and optoelectronic applications due to their direct bandgaps, high electron mobility, and tailorable properties.
Common III-V Semiconductor Substrates
| Substrate | Chemical Formula | Bandgap (eV) | Lattice Constant (Å) | Applications |
|---|---|---|---|---|
| Gallium Arsenide (GaAs) | GaAs | 1.42 (direct) | 5.653 | RF devices, LEDs, lasers, solar cells |
| Indium Phosphide (InP) | InP | 1.34 (direct) | 5.869 | High-speed photonics, telecom lasers |
| Gallium Nitride (GaN) | GaN | 3.4 (direct) | 3.189 (a), 5.185 (c) | Power electronics, LEDs, radar |
| Aluminum Gallium Arsenide (AlGaAs) | AlₓGa₁₋ₓAs | 1.42–2.16 | ~5.66 | Heterostructures, diode lasers |
| Indium Gallium Arsenide (InGaAs) | InₓGa₁₋ₓAs | 0.36–1.42 | 5.653–6.058 | Detectors, high-speed transistors |
| Gallium Antimonide (GaSb) | GaSb | 0.726 (direct) | 6.095 | Infrared detectors, thermophotovoltaics |
| Indium Arsenide (InAs) | InAs | 0.36 (direct) | 6.058 | IR detectors, quantum dots, Hall sensors |
| Aluminum Nitride (AlN) | AlN | 6.2 (direct) | 3.112 (a), 4.982 (c) | UV LEDs, RF filters, high temp devices |
Key Properties of III-V Substrates
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Direct Bandgap: Ideal for efficient light emission and absorption.
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High Electron Mobility: Excellent for RF and microwave applications.
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Tailored Lattice Matching: Enables heterostructure epitaxy with minimal defects.
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Thermal Conductivity: Varies widely (e.g., GaN is high, InAs is low).
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Substrate Availability: Limited wafer sizes, especially for GaN and InSb.
Applications of III-V Substrates
Challenges
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Cost: Higher than silicon due to crystal complexity and lower yield.
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Wafer Size: Often limited (2”–4”) compared to Si (up to 12”).
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Thermal Mismatch: Limits integration with Si-based systems.
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Toxicity: Arsenic- and antimony-based compounds require special handling.
Buying Guide: What to Look For
When purchasing III-V substrates, consider:
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Doping Type: n-type or p-type
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Orientation: Commonly (100) or (111)
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Polish: Single or double-side polished
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Thickness & TTV: Tailored to epitaxial needs
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Resistivity & Dislocation Density: Impacts device performance
Conclusion
III-V substrates are foundational to modern high-speed and optoelectronic technologies. From GaAs for RF devices to InP for telecom photonics, these materials offer performance advantages where silicon falls short.