Metallurgical Grade Silicon (MG-Si) for Research & Production

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

Metallurgical Grade Silicon (MG-Si)

MG-Si is the result of purifying silicon using heat and reducing agent. The silicon may be 99% purse. Additional processing is completed until ultrapure electronic grade silicon (EG-Si) is obtained.

Please let us know if you have specs that you would like us to quote for you.


Get Your Quote FAST!


Metallurgical Grade Silicon Wafers

Silicon process test discs are one of the most important components in the manufacturing process of semiconductor equipment. By using silicon test wafers as automation hardware, plant manufacturers can simulate the performance of silicon wafers used by fab and end-user manufacturers. [Sources: 14]

In view of the above advantages, silicon wafers can be used as substrates for silicon thin-film epitaxy and for inexpensive silicon solar cells. Upgrading to metallurgical silicon has several advantages, such as lower costs, higher performance and higher efficiency. If there is a cost-effective way to improve the fulfilment of all these goals, it will reduce the manufacturing costs of this process. It can also reduce manufacturing costs by being more efficient in the production of high-performance silicon cells and other semiconductor products. [Sources: 3, 7, 8]

Although a lot of effort is required to produce high purity silicon wafers, the cost of a standard silicon module is about 50% of the silicon on a wafer. This is not an easy task, as it is a complex and expensive process, especially in the case of the silicon thin-film epitaxy. [Sources: 0, 3]

The process of unloading, cooling and solidifying the silicon into the oven is called Metallurgical Grade Silicone (MGS). The process begins by charging it with quartzite and carbon in an arc furnace and then with carbon dioxide (CO2) in a gas chamber. [Sources: 6, 12]

There are also a number of options to improve metallurgical silicon and obtain upgrades. For example, you can work with a highly cleaned version of MGS or even a high-quality version with a stainless steel alloy. [Sources: 5, 7]

As mentioned above, metallurgical silicon can be obtained industrially by a variety of methods such as melting, solidification, melting and crystallization in the form of multicrystalline ingots. It is then loaded into a pebble crucible and placed in a melting or solidifying furnace. [Sources: 8]

After they become the starting material for the wafer manufacturing process, individual silicon wafers are sawn out of the silicon ingots, polished, packaged and shipped to manufacturers of integrated circuits. Native silicon wafer is different from Reclaimed Silicon wafer, which is processed by removing the previously deposited material film. [Sources: 12, 14]

Silicon of metallurgical quality usually contains at least 98% of the silicon and contains the last part in the form of a thin layer of less than 2 mm thickness. Metallurgical-grade silicon discs generally contain the smallest amount of silicon, but also the thickest in a film. [Sources: 7, 8]

Since 1997, the photovoltaic industry has been producing high-purity silicon for use in solar cells, which is processed by metallurgical instead of chemical cleaning processes. The material flow of 1997 was relatively simple to meet the demand for crystalline silicon in the solar cell, but the high purity of the silicon was converted into electronic applications. To produce electronic silicon wafers, they must be kept round for at least 10 years before they are upgraded to high-quality alloys such as copper, nickel, copper oxide or stainless steel. [Sources: 1, 4, 10, 13]

The inventor also discovered that the use of metallurgical silicon is possible by reducing the amount of energy required to release hydrogen into the hydrogenated nanopowders. Finally, he has also found a way to improve the ratio of metal to metal in solar cells by improving the quality and silicon metallurgy and reducing it to about 200 micrometers, which is about 10 times less than the current purity of crystalline silicon. The inventor has also discovered that it is also possible to reduce the number of nanometers in the surface of a wafer and the amount of energy required to contain hydrogen in the nano - powders that are produced from the quality or content of this silicon without hydrogen being released. [Sources: 3, 7]

Of course, the steps described to improve metallurgical silicon etching can be applied to all etchings with processed methallic alloys such as gold, silver, copper or other metals and can also be applied to other types of silicon wafers. Referring to Figure 2, which illustrates the process of producing silicon-based nanoparticles using the nanoparticles obtained from the nanoscale nanowders of a wafer etched with an improved meetallurgy silicon substrate (MG-Si) and the temperature range suitable for purchasing high quality silicon substrates. Such "doping steps," described in the article "Doping steps for improved metal-to-metal ratio of solar cells," can apply not only to metalurgical silicon, but also to a wide range of other types of nanomaterials. [Sources: 7, 8, 9]

Similar to ceramic kitchen tiles, nanoscale nanowders are sintered by nanomaterials such as ceramics and shaped into carrier substrates. [Sources: 2]

The silicon is then treated to remove impurities such as calcium and aluminum, leaving behind what is known as metallurgical silicon. The metal chloride is evaporated at high temperatures and the chlorine gas therefore reacts to a high degree with the silicon and other metals in the substrate and with other materials. [Sources: 3, 11]

The carrier gas is used to remove the metal chloride, and this provides a way to clean the porous structure of the silicon and other metals in the substrate, such as calcium and aluminum. It is etched at high temperature and pressure, removing pores and structures from silicon, and provides a solution for cleaning the surface of metallic silicon wafers and other substrates. [Sources: 3]