Silicon Carbide (SiC) Wafers for Power Electronics and RF Applications
Silicon carbide (SiC) wafers are widely used in next-generation power electronics, high-frequency RF devices, electric vehicles (EVs), renewable energy systems, aerospace electronics, and advanced semiconductor research. Compared to traditional silicon, SiC offers higher breakdown voltage, superior thermal conductivity, faster switching speeds, and improved efficiency in high-temperature environments.
UniversityWafer, Inc. supplies 4H-SiC, 6H-SiC, and semi-insulating silicon carbide substrates for research, prototyping, and production applications. Available options include epi-ready surfaces, custom diameters, various dopants, and low micropipe density specifications.
Get Your Silicon Carbide Wafer Quote FAST! Or, Buy Online and Start Researching Today!
4H Silicon Carbide Wafer Applications
4H-SiC is the most widely used silicon carbide polytype for power semiconductor devices due to its excellent electrical properties and high electron mobility.
- Power MOSFETs and Schottky Diodes
- Electric Vehicle (EV) Power Modules
- Solar Inverters and Renewable Energy Systems
- Power Factor Correction Circuits
- Industrial Motor Drives
- High-Voltage Switching Devices
- High-Temperature Electronics
- Smart Grid Infrastructure
4H-HPSI Silicon Carbide Applications
High Purity Semi-Insulating (HPSI) 4H-SiC substrates are commonly used for RF, photonic, and advanced research applications where low parasitic conductivity is critical.
- High-Power RF Amplifiers
- 5G and Wireless Communication Devices
- Graphene Growth Substrates
- Terahertz (THz) Devices
- Microwave Electronics
- Optoelectronic Components
- Quantum Technology Research
- III-Nitride Epitaxy
Silicon Carbide Substrates and SiC Epitaxy
Buy Silicon Carbide Wafers Online and Save!
UniversityWafer, Inc. supplies silicon carbide wafers and SiC epitaxy substrates for power electronics, RF devices, high-temperature electronics, graphene research, terahertz applications, optoelectronics, sensors, and semiconductor research. Available materials include 4H-SiC, 6H-SiC, N-type silicon carbide, and semi-insulating SiC wafers in multiple diameters and quality grades.
Epi-ready SiC substrates are available with controlled micropipe density, low surface roughness, and polished Si-face surfaces for epitaxial growth. Typical options include MPD-free wafers and grades with micropipe density specifications such as <5/cm2, <10/cm2, <30/cm2, and <100/cm2.
SiC Epitaxy Specifications
- Wafer Types: 4H-N, 4H-SI, 6H-N, 6H-SI
- Dopants: Nitrogen-doped and Vanadium-doped options
- Conductivity: N-type and semi-insulating silicon carbide
- Diameters: <25.4mm, 25.4mm, 50.8mm, 76.2mm, 100mm and custom sizes
- Polish: Single-side polished or double-side polished
- Surface: Si-face epi-ready CMP finish
- Surface Roughness: <0.5nm available
- Epi Thickness Uniformity: Wafer-to-wafer thickness uniformity around 2%
- Epi Doping Uniformity: Wafer-to-wafer doping uniformity around 4%
Popular Silicon Carbide Wafer Inventory
Current inventory includes a variety of 2-inch, 3-inch, and 4-inch SiC wafers. Please send your required diameter, polytype, orientation, dopant, resistivity, thickness, polish, micropipe density, and quantity so we can quote the best available stock or custom specification.
| Wafer Type | Diameter | Dopant / Conductivity | Orientation | Thickness | Grade / MPD | Resistivity | Polish / Surface |
|---|---|---|---|---|---|---|---|
| 6H-N | 2" / 50.8mm | N / Nitrogen | <0001> ±0.5° | 330 ±25µm | D Grade / MPD ≤100 cm-2 | 0.02-0.2 Ω·cm | SSP, Si-face epi-ready CMP, Ra <0.5nm |
| 6H-N | 2" / 50.8mm | N / Nitrogen | <0001> ±0.5° | 330 ±25µm | B Grade / MPD ≤30 cm-2 | 0.02-0.2 Ω·cm | SSP, Si-face epi-ready CMP, Ra <0.5nm |
| 4H-N | 2" / 50.8mm | N / Nitrogen | <0001> ±0.5° | 330 ±25µm | D Grade / MPD ≤100 cm-2 | 0.01-0.1 Ω·cm | SSP, Si-face epi-ready CMP, Ra <0.5nm |
| 4H-N | 2" / 50.8mm | N / Nitrogen | <0001> ±0.5° | 330 ±25µm | B Grade / MPD ≤30 cm-2 | 0.01-0.1 Ω·cm | SSP, Si-face epi-ready CMP, Ra <0.5nm |
| 4H-N | 3" / 76.2mm | N / Nitrogen | 4° ±0.5° | 350 ±25µm | D Grade / MPD ≤100 cm-2 | 0.01-0.1 Ω·cm | DSP, Si-face epi-ready CMP, Ra <0.5nm |
| 4H-N | 3" / 76.2mm | N / Nitrogen | 4° ±0.5° | 350 ±25µm | B Grade / MPD ≤30 cm-2 | 0.01-0.1 Ω·cm | DSP, Si-face epi-ready CMP, Ra <0.5nm |
| 4H-SI | 3" / 76.2mm | Semi-insulating / V | <0001> ±0.5° | 350 ±25µm | D Grade / MPD ≤100 cm-2 | 70% ≥1E5 Ω·cm | DSP, Si-face epi-ready CMP, Ra <0.5nm |
| 4H-SI | 3" / 76.2mm | Semi-insulating / V | <0001> ±0.5° | 350 ±25µm | B Grade / MPD ≤30 cm-2 | 80% ≥1E5 Ω·cm | DSP, Si-face epi-ready CMP, Ra <0.5nm |
| 6H-SI | 2" / 50.8mm | Semi-insulating / V | <0001> ±0.5° | 330 ±25µm | D Grade / MPD ≤100 cm-2 | 70% ≥1E5 Ω·cm | SSP, Si-face epi-ready CMP, Ra <0.5nm |
| 6H-SI | 2" / 50.8mm | Semi-insulating / V | <0001> ±0.5° | 330 ±25µm | B Grade / MPD ≤30 cm-2 | 85% ≥1E5 Ω·cm | SSP, Si-face epi-ready CMP, Ra <0.5nm |
| 4H-N | 4" / 100mm ±0.38mm | N / Nitrogen | 4.0° ±0.5° | 350 ±25µm | D Grade / MPD ≤100 cm-2 | 0.01-0.1 Ω·cm | TTV / Bow / Warp <45µm |
Buy as few as one SiC wafer!