I am after DLC coated material. Do you currently stock any?
(search term DLC refers to your web page, but I am having a hard time actually finding material)
Diamond Like Carbon Coated Silicon Wafers
A PhD candidate requested a quote for the following.
UniversityWafer, Inc. Quoted:
Item Qty. Description
ID17b. 1 Substrate:
Silicon wafers, per SEMI Prime, P/P 4" (100.0±0.5mm)Ø×500±25µm,
Intrinsic (Undoped)
Si [100]±0.5°, Ro>20.000 Ohmcm,
Both-sides-polished, SEMI Flat (one),
Diamond coating:
- Coating structure: microcrystalline
- Coating thickness: approximately 200nm
- Undoped (residual boron: may be present from reactor history)
Reference #323541 for specs and pricing.
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FAQ: Diamond-Like Carbon (DLC)
What is Diamond-Like Carbon (DLC)?
How is DLC deposited on wafers?
What are the uses of DLC in semiconductor fabrication?
Is DLC conductive?
Diamond-Like Carbon (DLC) is a form of amorphous carbon (a-C) that contains a mixture of sp² (graphite-like) and sp³ (diamond-like) carbon bonds. It is not crystalline diamond, but it has many of diamond’s desirable properties, such as:
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High hardness (can approach diamond levels, depending on sp³ content)
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Chemical inertness (resistant to oxidation, corrosion, and chemical attack)
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Low friction and wear resistance
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High electrical resistivity (can be insulating or semiconducting depending on hydrogen content and doping)
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Wide optical transparency (in the infrared to visible range, depending on deposition method)
Because of these properties, DLC is widely used in protective coatings, optics, biomedical devices, and increasingly in semiconductor fabrication.
How DLC is Fabricated
DLC films are typically deposited as thin coatings (from a few nanometers to several microns thick) using plasma-based processes, such as:
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Plasma-Enhanced Chemical Vapor Deposition (PECVD): Common method using hydrocarbon gases (CH₄, C₂H₂, etc.) in plasma.
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Sputtering: Carbon target sputtered in argon plasma.
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Ion Beam Deposition: Direct carbon ion implantation for high sp³ bonding fraction.
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Cathodic Arc Evaporation: Produces dense, hard DLC films.
Hydrogenated DLC (a-C:H) is most common in microelectronics, as hydrogen helps reduce defects and stress in the film.
Uses of DLC in Semiconductor Fabrication
In semiconductor and micro/nanofabrication, DLC is valuable because it combines chemical resistance, mechanical durability, and tunable electrical properties:
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Etch Mask / Hardmask
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Low-k / Dielectric Layer
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Modified DLC (fluorinated DLC or doped DLC) can serve as an interlayer dielectric because of its relatively low dielectric constant compared to SiO₂.
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Can reduce RC delay in interconnects.
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Diffusion Barrier
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Acts as a barrier to metal diffusion (e.g., Cu into Si or dielectrics).
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Protects underlying layers from oxidation and contamination.
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Passivation / Protective Coatings
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Provides chemical and mechanical protection for MEMS devices and sensors.
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Used as an anti-stiction layer in NEMS/MEMS.
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Serves as an encapsulation layer for devices exposed to harsh environments.
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Masking Layer for Ion Implantation
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DLC films can withstand high doses of ion implantation without deformation, making them useful as masks for selective doping.
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Photomask and Lithography Applications
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In EUV lithography research, DLC has been investigated as an absorber material due to its stability and absorption properties.
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✅ Summary:
Diamond-Like Carbon (DLC) is an amorphous carbon film with diamond-like mechanical, chemical, and optical properties. In semiconductor fabrication, it is mainly used as an etch hardmask, diffusion barrier, low-k dielectric, and passivation layer. Its strength lies in its hardness, chemical inertness, and tunable electrical properties, making it increasingly important for advanced nodes, MEMS/NEMS, and protective layers in microelectronics.
| Property / Use Case | DLC | SiO₂ | Si₃N₄ | Photoresist |
|---|---|---|---|---|
| Structure | Amorphous sp²/sp³ carbon mix | Amorphous / crystalline | Amorphous / polycrystalline | Organic polymer |
| Hardness / Durability | Very high Close to diamond | Moderate | High | Very low |
| Etch Resistance | Excellent vs F/Cl plasmas | Moderate | Excellent (etch stop/oxidation) | Poor (degrades in plasma) |
| Dielectric Constant (k) | ~2.5–3.5 (tunable, low-k) | 3.9 | ~7.0 | >10 (not for interconnects) |
| Electrical Properties | Insulator → semiconducting (H/doping) | Strong insulator | Strong insulator | Insulator (unstable with heat) |
| Thermal Stability | Good to ~400–500 °C (a-C:H < a-C) | Very high (>1000 °C) | Very high (>1000 °C) | Poor (~150 °C) |
| Chemical Inertness | Excellent (resists acids/bases) | Good (etchable with HF) | Excellent (hot H₃PO₄ etch) | Poor (solvent sensitive) |
| Common Uses in Fabs | Etch hardmask; diffusion barrier; passivation; MEMS; low-k | Gate oxide; ILD; sacrificial layers | Barrier; etch-stop; mask | Lithography mask; temporary protection |
| Thickness Range | Few nm → several µm | 1 nm → several µm | 10 nm → several µm | 100 nm → few µm |
| Deposition / Apply | PECVD, sputter, ion beam | Thermal ox., CVD | LPCVD, PECVD | Spin coat |
| Cost & Complexity | Moderate (specialized tools) | Low (mature, cheap) | Moderate | Very low |