Metals Deposition for Research & Production

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Sputtered Films and E-Beam Evaporation Services

The metals commonly used for sputtered films include:

  1. Aluminum (Al): Al is commonly used in the production of semiconductor devices as a conductive material for interconnects and contacts.

  2. Gold (Au): Au is used in various applications, including decorative coatings, electrical contacts, and as a material for optical coatings due to its high reflectivity.

  3. Copper (Cu): Cu is commonly used in the production of semiconductor devices as a conductive material for interconnects and contacts.

  4. Silver (Ag): Ag is used in various applications, including decorative coatings, electrical contacts, and as a material for optical coatings due to its high reflectivity.

  5. Platinum (Pt): Pt is used as a material for catalytic coatings and in microelectronics for metal interconnects and contacts due to its high conductivity.

  6. Titanium (Ti): Ti is used as a material for barrier layers in microelectronics to prevent metal diffusion between layers and to improve adhesion between metal layers and dielectric materials.

  7. Tungsten (W): W is commonly used in the production of semiconductor devices as a conductive material for interconnects and contacts due to its high melting point and low resistivity.

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In sputtering, a plasma is used to eject atoms or ions from a target material, which then condense onto the substrate to form a thin film. The process is performed under a vacuum to prevent contamination and ensure uniform deposition. The deposited metal layer can be used for various applications, including semiconductor devices, decorative coatings, and optical coatings. The specific application of each metal depends on its properties, such as conductivity, reflectivity, and catalytic activity.

The metals commonly used for e-beam evaporation include:

  1. Aluminum (Al): Al is used as a material for reflective coatings and in microelectronics for metal interconnects and contacts.

  2. Gold (Au): Au is used in various applications, including decorative coatings, electrical contacts, and as a material for optical coatings due to its high reflectivity.

  3. Copper (Cu): Cu is used as a material for conductive coatings and in microelectronics for metal interconnects and contacts.

  4. Silver (Ag): Ag is used in various applications, including decorative coatings, electrical contacts, and as a material for optical coatings due to its high reflectivity.

  5. Platinum (Pt): Pt is used as a material for catalytic coatings and in microelectronics for metal interconnects and contacts due to its high conductivity.

  6. Titanium (Ti): Ti is used as a material for barrier layers in microelectronics to prevent metal diffusion between layers and to improve adhesion between metal layers and dielectric materials.

  7. Tungsten (W): W is used as a material for conductive coatings and in microelectronics for metal interconnects and contacts due to its high melting point and low resistivity.

In e-beam evaporation, the metal is heated by an electron beam to a high temperature, causing it to vaporize and condense onto the substrate. The process is performed under a vacuum to prevent contamination and ensure uniform deposition. The deposited metal layer can be used for various applications, including decorative coatings, electrical contacts, and in microelectronics for metal interconnects and contacts. The specific application of each metal depends on its properties, such as conductivity, reflectivity, and catalytic activity.

Sputtered Films and E-Beam Evaporation Services

The metals commonly used for sputtered films include:

  1. Aluminum (Al): Al is commonly used in the production of semiconductor devices as a conductive material for interconnects and contacts.

  2. Gold (Au): Au is used in various applications, including decorative coatings, electrical contacts, and as a material for optical coatings due to its high reflectivity.

  3. Copper (Cu): Cu is commonly used in the production of semiconductor devices as a conductive material for interconnects and contacts.

  4. Silver (Ag): Ag is used in various applications, including decorative coatings, electrical contacts, and as a material for optical coatings due to its high reflectivity.

  5. Platinum (Pt): Pt is used as a material for catalytic coatings and in microelectronics for metal interconnects and contacts due to its high conductivity.

  6. Titanium (Ti): Ti is used as a material for barrier layers in microelectronics to prevent metal diffusion between layers and to improve adhesion between metal layers and dielectric materials.

  7. Tungsten (W): W is commonly used in the production of semiconductor devices as a conductive material for interconnects and contacts due to its high melting point and low resistivity.

In sputtering, a plasma is used to eject atoms or ions from a target material, which then condense onto the substrate to form a thin film. The process is performed under a vacuum to prevent contamination and ensure uniform deposition. The deposited metal layer can be used for various applications, including semiconductor devices, decorative coatings, and optical coatings. The specific application of each metal depends on its properties, such as conductivity, reflectivity, and catalytic activity.

The metals commonly used for e-beam evaporation include:

  1. Aluminum (Al): Al is used as a material for reflective coatings and in microelectronics for metal interconnects and contacts.

  2. Gold (Au): Au is used in various applications, including decorative coatings, electrical contacts, and as a material for optical coatings due to its high reflectivity.

  3. Copper (Cu): Cu is used as a material for conductive coatings and in microelectronics for metal interconnects and contacts.

  4. Silver (Ag): Ag is used in various applications, including decorative coatings, electrical contacts, and as a material for optical coatings due to its high reflectivity.

  5. Platinum (Pt): Pt is used as a material for catalytic coatings and in microelectronics for metal interconnects and contacts due to its high conductivity.

  6. Titanium (Ti): Ti is used as a material for barrier layers in microelectronics to prevent metal diffusion between layers and to improve adhesion between metal layers and dielectric materials.

  7. Tungsten (W): W is used as a material for conductive coatings and in microelectronics for metal interconnects and contacts due to its high melting point and low resistivity.

In e-beam evaporation, the metal is heated by an electron beam to a high temperature, causing it to vaporize and condense onto the substrate. The process is performed under a vacuum to prevent contamination and ensure uniform deposition. The deposited metal layer can be used for various applications, including decorative coatings, electrical contacts, and in microelectronics for metal interconnects and contacts. The specific application of each metal depends on its properties, such as conductivity, reflectivity, and catalytic activity.