Silicon Wafer
| Stock of SiC Epitaxial Wafer | |||||||
| Item No. | Wafer Number | Substrate | Size | Buffer Layer thickness （um） |
Concerntration of buffer layer （cm-3） |
Epilayer thickness （um） |
Concerntration of epilayer（cm-3） |
| 1 | PAM-L82A6-01 | 4H,n type, MPD<5/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 9.809 | 6.37E+14 |
| 2 | PAM-L82A6-02 | 4H,n type, MPD<5/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 9.743 | 4.30E+14 |
| 3 | PAM-L82A6-03 | 4H,n type, MPD<5/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 32.489 | 2.02E+15 |
| 4 | PAM-L82A6-04 | 4H,n type, MPD<5/cm2,Dsp | 4" | 3.000 | 1.00E+18 | 100.000 | 9.09E+15 |
| 5 | PAM-L82A6-05 | 4H,n type, MPD<1/cm2,Dsp | 4" | 3.000 | 1.00E+18 | 100.000 | 1.05E+16 |
| 6 | PAM-L82A6-06 | 4H,n type, MPD<1/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 17.965 | 5.66E+15 |
| 7 | PAM-L82A6-07 | 4H,n type, MPD<1/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 16.084 | 5.45E+15 |
| 8 | PAM-L82A6-08 | 4H,n type, MPD<1/cm2,Dsp | 4" | 3.000 | 1.00E+18 | 100.000 | 2.82E+15 |
| 9 | PAM-L82A6-09 | 4H,n type, MPD<1/cm2,Dsp | 4" | 3.000 | 1.00E+18 | 100.000 | 3.71E+15 |
| 10 | PAM-L82A6-10 | 4H,n type, MPD<1/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 5.280 | 9.84E+15 |
| 11 | PAM-L82A6-11 | 4H,n type, MPD<1/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 5.798 | 9.93E+15 |
| 12 | PAM-L82A6-12 | 4H,n type, MPD<1/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 5.636 | 9.29E+15 |
| 13 | PAM-L82A6-13 | 4H,n type, MPD<1/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 5.488 | 9.95E+15 |
| 14 | PAM-L82A6-14 | 4H,n type, MPD<1/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 13.241 | 1.22E+16 |
| 15 | PAM-L82A6-15 | 4H,n type, MPD<1/cm2,Dsp | 4" | 0.500 | 1.00E+18 | 6.660 | 5.46E+15 |