Silicon on Sapphire (SoS) Wafers

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

Companies that Use Silicon Sapphire (SOS) Wafers

The subtrates benefits have been attacted companies, including Apple, Google, Microsoft, Samsung and Samsung Electronics.

Typical Silicon-on-Sapphire (SoS) Packaging for One Wafer

Silicon on Sapphire Wafers

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Pre-cut 4'' Silicon-on-Sapphire (SOS) Wafer

We can pre-cut SoS wafers into diced pieces.

Sapphire thickness 460+/-25um,we have 400nm SOS based on 460um DSP R-sapphire,if need SSP SOS,we have it with >/=600nm Si on 460+/-25um SSP Sapphire.

diced silicon on sapphire wafers

Wafers for Metasurfaces Research

600nm thick Silicon deposited on on sapphire wafers have been used from research clients for their academic research metasurfaces.

Our Research Client States:

We will use e-beam lithography to fabricate designed silicon
nanostructures on the sapphire wafer, which is called as

Metasurfaces can be used to manipulate the wavefront,
propagation direction, or focusing of light.

Silicon-on-Sapphire Refractive Index

A researcher asks:

I am interested in Si on Sapphire Wafer(SOS) for some experiments. And I have a few questions. 1. I want to know the refractive index of Si for the light with wavelength of 850nm. Is it okay to think that your Si on wafer has the same refractive index as bulk crystalline silicon whose refractive index for 850nm is n=3.673 and k=0.005? If it is not correct, would it be possible to know the refractive index? 2. Does your company have an agency in Japan which I can buy through? I look forward to hearing from you soon.

UniversityWafer replied:

The refractive index shoud be the same, because the si film on sapphire was the same single crystal silicon <100>.

Silicon on Sapphire (SoS)

The advantage of sapphire is that it is an excellent electrical insulator, preventing stray currents caused by radiation from spreading to nearby circuit elements.

Buy SoS wafers Online!

Analog-to-Digital Converters

Analog to Digital Converters

Monolithic Digital Isolation Buffers

Monolithic Digital Isolation Buffers

SOS-CMOS image sensor arrays

silicon on insulator cmos image sensor arrays

Patch-Clamp Amplifiers

Silicon on Sapphire patch clamp amplifiers

Energy Harvesting Devices

Silicon-on-Sapphire Energy Harvesting Devices

Three-Dimensional (3D) Integration with no Galvanic Connections

Silicon on Sapphire three diminsional integration without galvanic connections

Charge Pumps

Silicon-on-Sapphire (SoS) Charge Pumps

Temperature Sensors

Silicon-on-Sapphire (SoS) Temperature Sensors

Below are just some of the Silicon-on-Sapphire Wafers that we have in stock!

Size (") Orientation Thick(μm) Pol Qty Grade Si Film Thickness
4 R-plane+/-0.5° 460+/-20 SSP 50 Prime 0.6um <100> Si
4 R-plane+/-0.5° 460+/-20 SSP 2 Prime 0.6um <100> Si
4 R-plane+/-0.5° 460+/-20 DSP 10 Prime 0.6um <100> Si
4 R-plane+/-0.5° 530+/-20 DSP 4 Prime 100+/-10nm <100> Si
4 R-plane+/-0.2° 530+/-20 DSP 4 Prime 230+/-10nm <100> Si
4 R-plane+/-0.2° 530+/-20 DSP 4 Prime 1.5+/-0.15um <100> Si
4 R-plane+/-0.5° 460+/-20 SSP 4 Dummy  
6 R-plane+/-1° 600+/-20 SSP 1    
8 R-plane+/-2° 725+/-20 SSP 1    

SoS wafers to Fabricate Dielectric Resonantors

A new dielectric sensor fabricated from Silicon-on-Silicon (SOS) is attracting great interest as an integrated optical device for use in smartphones and tablets.

Scientists are reseaching fabricating dielectric resonator capable of maximising the maximum power of the sensor and its optical properties in the form of an optical sensor using SoS.

What are Silicon-on-Sapphire Wafers Used For?

Researchers have used the following SoS wafer specs to fabricate photonic crystal structures using e-beam lithography.

1 item of Pre-cut 4" Silicon on Sapphire Wafer, DSP, 100nm of Si film layer.

Qty. one wafer
dicing into 10x10mm chips.
Silicon orientation is 100

We use these substrates to fabricate photonic crystal structures using e-beam lithography. Before we ordered Si on Insulator substrates with 70 nm film of Si from you and they worked pretty well for fabrication of photonic crystals which operate in visible wavelength range. However, the presence of BOX in SOI substrates gives rise to Fabry Perot modes which overlay with our photonic modes, which worsens the contrast. That's why we need to switch to the substrate without an intermediate layer, like SOS substrate. A while ago we ordered SOS wafer from you, but with 230 nm of Si film. This thickness is too large for our project in visible range, so we are trying to reduce it somehow. We are not very experienced in that, we have tried the plasma etching of Si, but it leads to not very good quality of surface. We think also to try chemical etching of Si. Maybe you can suggest any good solution for this problem? Of course, other option for us is to buy SOS substrate with the thinnest Si film, but it appears too pricy for us, especially because we are not very large research group and we do not need the whole 4" wafer for this one specific project. Hopefully, I answered you questions. I will appreciate any suggestions from your side.