Our clients use Dry Thermal Oxide for making thin-film electronic devices.
"We are making thin-film electronic devices on the surface of the silicon dioxide, and using the silicon and a electric field back-gate. With the wet thermal oxide, we find that the oxide leaks significantly, leading to an unusable device. Thus we need dry oxide."
The spec used for this:
100mm P(100) 0.001-0.005 ohm-cm SSP 500um with 300nm of Dry Oxide on Polished Side Only
Please let us know what spec we can quote for you.