Thin Film Electronic Devices on Silicon Dioxide

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University Silicon Wafer for Production

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Wafers Used to Deposit Thin Film Electronic Devices

Our clients use Dry Thermal Oxide for making thin-film electronic devices.


"We are making thin-film electronic devices on the surface of the silicon dioxide, and using the silicon and a electric field back-gate. With the wet thermal oxide, we find that the oxide leaks significantly, leading to an unusable device. Thus we need dry oxide."

The spec used for this:

100mm P(100) 0.001-0.005 ohm-cm SSP 500um with 300nm of Dry Oxide on Polished Side Only

Please let us know what spec we can quote for you.