BaF2 is used in nuclear reactors to control the rate of the nuclear reaction. It is also used as a neutron absorber in nuclear reactors. Barium fluoride is used in infrared detectors, lasers, and other optical equipment. It can be used as a window material for IR spectroscopy. It can be also used to make windows for X-ray and gamma ray detectors. It is also used to detect certain types of radioactive materials. In the medical field, it is used as a contrast agent in X-ray imaging of the gastrointestinal tract.
Researcher: Ultrathin BaF2 films
" I had to explain to him that a thin film of barium fluorides with different thicknesses was deposited on GaAs substrate by electron beam evaporation. The aim of the work was to identify the best growth conditions for the production of coatings with a low work function suitable for the anode of hybrid thermionic-photovoltaic (TIPV) devices. The chemical composition and work function ϕ of the films with different thicknesses were investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The lowest value of ϕ = 2.1 eV was obtained for the film with a thickness of ~2 nm. In the valence band spectra of the films at low kinetic energy, near the cutoff, a characteristic peak of negative electron affinity was present. This effect contributed to a further reduction of the film's work function. In 2007, I was involved in a project to develop a new type of solar cell based on nanostructured barium strontium titanate (BST) thin films deposited on Si substrates by pulsed laser deposition (PLD)."
Electron Beam Evaporation was used to analyze the deposition of ultra-thin Barium Fluoride (BaF2) films on gallium arsenide wafers. Film thickness and chemical composition on the work function of the resulting heterostructure. X-ray photoemission spectroscopy combined with ultraviolet photoemission spectroscopy measurements reveals that films of 2 nm nominal thickness and Ba/F = 1.0 stoichiometry ratio induce the achievement of a significantly low work function of 2.1 eV to the BaFx/GaAs heterostructure. The significant reduction of the work function at least down to 3.0 eV is confirmed by a test thermionic converter operating at a cathode temperature of 1385 °C, where the heterostructure was applied as anode. The low work function, together with a negligible optical absorption, makes feasible the practical application of barium fluoride coatings on GaAs within hybrid thermionic-thermophotovoltaic devices.
Below are just some of the BaF2 substrates that we have in stock:
BaF2 thin films are sputtered on aluminum, silicon and glass solid substrates using electron beam evaporation (EBE) technique in vacuum (6 to 10 mbar) and at room temperature. The thickness of the barium fluoride deposited thin layer on the substrates mentioned above is nearly 20nm with a deposition rate of 0.4 to 0.5 nm per second. In the sputtering process, all substrates are precisely cleaned before depositing the BaF2. A quartz crystal is applied to monitor the thickness. After the deposition, the surface structure is characterized by Glancing Angle X-ray Diffraction (GAXRD) diffractometer. Atomic force microscopy is used to study the morphology of the thin film. According to the characterization data by XRD peaks, the crystallites size on silicon substrate appears to be remarkably smaller than aluminum and glass substrates. The thin film prepared in this way has numerous physical and chemical specifications so qualified enough to be applied in manufacturing high-tech microprocessors.