Request a Quote for Gallium Nitride (GaN) Wafers
UniversityWafer supplies Gallium Nitride (GaN) wafers and GaN epitaxial substrates for university, government, and industrial research. We offer GaN on sapphire, silicon carbide (SiC), and aluminum nitride (AlN) substrates for applications including RF electronics, HEMTs, LEDs, laser diodes, power electronics, optoelectronics, and photonics.
Custom wafer diameters, substrate materials, epitaxial layer thicknesses, doping types, orientations, and polishing options are available. Whether you need a single research wafer or production quantities, our technical team can help identify the best GaN substrate for your application.
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Custom GaN Wafer Solutions
We can supply GaN on Sapphire, GaN on SiC, GaN/AlN/SiC, and GaN/AlN/Sapphire epitaxial wafers with specifications tailored to your research or device development requirements. Contact us for custom configurations, pricing, and availability.
Gallium Nitride (GaN) Epitaxial Substrates
Gallium Nitride (GaN) wafers are widely used for high-power electronics, RF and microwave devices, LEDs, laser diodes, optoelectronics, and next-generation semiconductor research. UniversityWafer supplies a variety of GaN epitaxial wafers grown on sapphire, silicon carbide (SiC), and aluminum nitride (AlN) substrates to meet demanding research and development requirements.
GaN is a wide-bandgap semiconductor known for its high electron mobility, high breakdown voltage, excellent thermal stability, and outstanding power efficiency. These properties make GaN substrates ideal for RF amplifiers, 5G communications, electric vehicles, power conversion, photonics, UV LEDs, and aerospace electronics.
Available GaN Wafer Configurations
GaN on Silicon Carbide (GaN/SiC)
- Substrate: 6H Silicon Carbide (SiC)
- Diameter: 50 mm
- Orientation: On-axis
- Conductivity: N-Type
- GaN Thickness: Approximately 0.5 µm
GaN on Sapphire
- Substrate: Sapphire (Al₂O₃)
- Diameter: 50 mm
- Orientation: On-axis
- Conductivity: N-Type
- GaN Thickness: 0.5–10 µm
GaN/AlN on Silicon Carbide
- Structure: GaN / AlN / 6H-SiC
- Diameter: 50 mm
- Orientation: On-axis
- Conductivity: N-Type
- GaN Thickness: 0.5–0.8 µm
- AlN Thickness: Approximately 0.1 µm
GaN/AlN on Sapphire
- Structure: GaN / AlN / Sapphire
- Diameter: 50 mm
- Orientation: On-axis
- Conductivity: N-Type
- GaN Thickness: 0.5–0.8 µm
- AlN Thickness: Approximately 0.1 µm
Typical Applications
- RF and microwave electronics
- 5G and wireless communication devices
- HEMT transistor development
- High-power and high-voltage electronics
- LEDs and laser diodes
- Optoelectronic and photonic devices
- Power conversion and electric vehicle electronics
- University and government semiconductor research
UniversityWafer can supply GaN epitaxial wafers in a variety of substrate materials, diameters, orientations, doping types, and epitaxial thicknesses. Contact us with your required specifications for a fast quote on custom Gallium Nitride wafers.