Silicon Carbide Wafers & SiC Epitaxy

university wafer substrates

Get Your Quote FAST!

Company:

4H Silicon Carbide Wafer Applications include

4H-N SiC Substrates/SiC Epitaxy

• Optoelectronics
• Power-factor correction
• Solar inverters
• Industrial motor drives


4H-HPSI SiC Substrates/III-Nitride Epitaxy

• High-power RF
• Graphene
• Terahertz

 

SiC Substrate and Epitaxy

Buy Online and SAVE! See bottom of page for some of our SiC inventory.

SiC substate (epi ready), N type and Semi-insulating,polytype 4H and 6H in different quality grades, Micropipe Density (MPD):Free, <5/cm2, <10/cm2, <30/cm2,<100/cm2

SiC Epitaxy:Wafer to wafer thickness uniformity: 2% ,Wafer to wafer doping uniformity: 4%.

silicon carbide wafers epitaxy

 

Current Inventory Includes, but not limited to the following. We also have < 25.4mm, 25.4mm, 76.mm, 100mm available.

<6H-N

<50.8mm N/Nitrogen <0001>+/0.5 deg 330um 0.02 ~ 0.2 Ω·cmSSP Epi Ready Roughness <0.5nm

<4H-N

<50.8mm N/Nitrogen <0001>+/-0.5 deg 330um 0.01-0.1 Ω·cm  SSP Epi Ready< Roughness : <0.5 nm

Please provide us with your specs or ask to see our inventory! Below are just some of the SiC wafers that we have in stock.

Buy as few as one SiC Wafer!

2" 6H N-Type
6H-N 2" dia,
Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
D Grade,MPDä100 cm-2 D Grade,RT:0.02-0.2 Ω·cm
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm


2" 6H N-Type
6H-N 2" dia, Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPDä30 cm-2 B Grade,RT 0.02 ~ 0.2 Ω·cm
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 

 

2" 4H N-Type
4H-N 2" dia, Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
D Grade,MPDä100 cm-2 D Grade:RT:0.01-0.1 Ω·cm D Grade,Bow/Warp/TTV<25um
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

 

2" 4H N-Type
4H-N 2" dia, Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPDä30 cm-2 B Grade:RT:0.01 - 0.1 Ω·cm B Grade,Bow/Warp/TTV<25um
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 


3" 4H N-Type
4H-N 3" dia, Type/ Dopant : N / Nitrogen
Orientation :4 degree+/-0.5 degree 
Thickness : 350 ± 25 um
D Grade,MPDä100 cm-2 D Grade,RT:0.01-0.1Ω·cm D Grade,Bow/Warp/TTV<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 

 

3" 4H N-Type
4H-N 3" dia, Type/ Dopant : N / Nitrogen
Orientation : 4 degree+/-0.5 degree 
Thickness : 350 ± 25 um
B Grade,MPDä30 cm-2 B Grade,RT:0.01 - 0.1Ω·cm B Grade,Bow/Warp/TTV<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

 

3" 4H SI
4H-SI 3" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
D Grade,MPDä100 cm-2 D Grade,RT:70 % ≥1E5 Ω·cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

 

3" 4H SI
4H-SI 3" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
B Grade,MPDä30 cm-2 B Grade,RT:80 % ≥1E5 Ω·cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 

 

2" 6H SI
6H-SI 2" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
D Grade,MPDä100 cm-2 D Grade,RT:70 % ≥1E5 Ω·cm
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

 

2" 6H SI
6H-SI 2" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPDä30 cm-2 B Grade,RT:85 % ≥1E5 Ω·cm
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 


4" 4H N-Type
4H-N 4"dia.(100mm±0.38mm),
Type/ Dopant : N / Nitrogen
Orientation : 4.0°±0.5°
Thickness : 350μm±25μm
D Grade,MPDä100 cm-2 D Grade,0.01~0.1Ω•cm D Grade,TTV/Bow /Warp<45um