Indium Arsenide (InAs) Substrates

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We have a large selection of InAs wafers in stock and ready to ship.

Below is just a short list of the InAs that we have in stock. Please let us know if you can use or if you would like us to quote you on another spec.

Qty in	Material	Orient.	Diam	Thck	Surf.	Source	Resistivity	Nc	Mobil	EPD	Comment
Stock	Material	Orient.	(mm)	(μm)	Surf.	Source	Ωcm	a/cm3	cm2/Vs	/cm2	Comment
2	undoped InAs:--	[100]	3"	500	P/E	ITME	n--type 0.0125	2.30E+16	>21,000	<3,500	EJ Flats; Epi Ready
1	undoped InAs:--	[100]	2"	400	P/E	ITME	n--type 0.00627	1.80E+16	54,000	<1,000	Epi Ready, (Ro, Nc and Mobility measured at 77ºK), TEST grade -- minor edge chips
4	n--type InAs:S	[111B] ±0.5°	2"	500	P/E	Xiamen		(1--30)E17	10,000--25,000	<15,000	2 Flats {PF @ <110>, SF 120° from PF; Epi Ready
19	p--type InAs:Zn	[100]	2"	500	P/E	Xiamen		(1--3)E18	100--130	<10,000	EJ Flats; Epi Ready
7	undoped InAs:--	[100]	3"	500	P/E	ITME aro 5 wks	n--type ~0.0125	2.30E+16	>21,000	<3,500	EJ Flats; Epi Ready
2	undoped InAs:--	[100]	2"	400	P/E	ITME aro 1 wks	n--type 0.00627	1.80E+16	54,000	<1,000	Epi Ready, (Ro, Nc and Mobility measured at 77K), TEST grade -- minor edge chips
4	undoped InAs:--	[100]	2"	350	P/E	ITME aro 1 wks	n--type 0.010	2.00E+16	>23,000	<5,000	EJ Flats; Epi Ready
50	undoped InAs:--	[100]	2"	500	P/E	ITME aro 6 wks	n--type 0.0110--0.0125	(2.3--2.7)E16	21,320--21,850		EJ Flats; Epi Ready
4	undoped InAs:--	[100]	2"	500	P/E	ITME aro 1 wks	n--type 0.0110--0.0125	(2.3--2.7)E16	21,320--21,850		EJ Flats; Epi Ready -- TEST grade -- Edge Chips on S Flat
3	p--type InAs:Zn	[100]	2"	450	P/E	ITME aro 3 wks	0.0048--0.0113	(1.1--3.6)E19	116--152	<1,000	Epi Ready, Low EPD, small Flat 180° from PF