Inductively Coupled Plasma - Reactive Ion Etching (ICP-RIE)

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Inductively Coupled Plasma - Reactive Ion Etching (ICP-RIE)


When you need to have high etch rates, then Inductively Coupled Plasma (ICP) etching is the go to method! It provides high selectivity and low damage processing. Plasma can be easily controlled at low pressures.

The following silicon wafer specs can be use for your ICP-RIE testing.

Click on the Item# link to order.

Item# Dia Type/Dop Ori Res ohm-cm Thick Polish More
2103 100mm P/B [100] 0-100 500um SSP with 1,000nm of Thermal Oxide
1922 100mm P/B [100] 0.0001-0.005 500um SSP with 100nm of Super Low Stress LPCVD
809 100mm N/Ph [100] 1-10 500um SSP

Please let us know if you can use or if you have other specs that you would like quoted.

Below are some Reactive Ion Etching (ICP-RIE) that we have for sale.

 

 

TEGAL 903

CASSETTE TO CASSETTE RIE, CONFIGURED FOR 4" WAFERS
INCLUDES FOMBLIN PREPPED DIRECT DRIVE VACUUM PUMP
DOES NOT INCLUDE FOMBLIN OIL

Plasma Sciences Reatctive Ion Etching

PLASMA SCIENCES R.I.E. 200W

TABLE TOP REACTIVE ION ETCHER
ONE  WAFER UP TO 6" DIAMETER PER CYCLE
TURBO PUMPED
MICROPROCESSOR CONTROLLED
REBUILT ROUGING PUMP

oxford 80 reactive ion etcher

OXFORD 80 REACTIVE ION ETCHER (R.I.E.) 

OPEN DESIGN ALLOWS FOR FAST LOADING
REBUILT 2 STAGE VACUUM  PUMP
4 MFC GAS CONTROL SYSTEM available
TURBO PUMP OPTION available

technics peiia plasma etcher

TECHNICS PEIIA PLASMA SYSTEM

3 GAS INPUTS (MANUAL CONTROLS)
(5) 4" WAFERS PER CYCLE OR MANY MORE 3" WAFERS
REBUILT 2 STAGE VACUUM PUMP
ADVANCED ENERGY P1000 POWER SUPPLY
NEW PLC CONTROL SYSTEM

plasma sciences reactive ion etching 600w

PLASMA SCIENCES RIE 600W FOR 12" WAFERS

600 WATT POWER SUPPLY
TURBO PUMP
MECHANICAL PUMP
MANUAL GAS VALVES
VIDEO DEMONSTRATION available