When you need a solution to your power performance, the following SiC has very high crystal quality and low defect densities. These SiC substrates optimize targeted performance, reduce costs for next generation power electronic devices,
and total cost of ownership for next generation power electronics devices.
For our current SiC specials we have:
• 100 mm and 150 mm SiC epitaxial wafers
• 150 mm and
• SiC ingots
100mm Test / Mechanical
- Tune equipment
-650v to 1700v Diode
- Tune equipment
Mechanical grade with better shape (bow / warp)
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Our grading structure allows power device designers to more
confidently pinpoint the Silicon Carbide wafers that optimizes the performance and cost of their next generation device design. This SiC substrate grading structure sets a higher standard for specifying tolerances. At the highest quality tier, materials feature defect densities as low as MPD ≤ 0.1 cm-2,
TSD ≤ 500 cm-2 and BPD ≤ 1,000 cm-2.
|Guaranteed MPD tolerances. Balances performance and cost for electronic components with low to medium current ratings.
|Schottky and junction barrier
|More stringent tolerances for MPD current ratings and TSD.
Allows for manufacturing with mid-range current ratings.
|Pin Diodes and Switches
|Extremely low MPD, TSD and BPD tolerances and tightened
wafer resistivity. Ensures product quality and improves cost
efficiency in manufacturing high current devices.
|High current and voltage
MOSFETs, JFETs, IGBTs, BJTs,
and pin diodes with large die
Below are the specs of the inventory we have for sale. See below for 150mm SiC.
4H-1440 n+ Silicon Carbide Wafer
100mm, 4 deg off-axis