Silicon Wafers Specifications for Plasma Test Method

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What Silicon Wafers are Used to Research and Develop Plasma Testing Methods?

Low-pressure plasma technology research and develop is an ongoing process. UniversityWafer, Inc. researcher clients have used the following silicon wafers to develop new plasma testing methods.

Si Item #857 - 150mm P/B <100> 0-10 ohm-cm 620um SSP Test Grade
Great for wafer processing studies.

Si Item #3148 - 200mm N/P <100> 20-40 ohm-cm 725um SSP Mechanical Grade

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How is Plasma Used to Clean Silicon Wafers?

Plasma is ued to protect substrates and electronic devices by removing impurties at the nanoometer level at an affordable price and timely manner.

Silicon Wafer Plasma Test Method

In this paper we describe a new approach to binding a silicon wafer for fusion, and in an article in the November 22, 1988 issue of Physical Review Letters we describe a method for etching silicon wafers with a plasma - a supported gas mixture consisting of CF-3 Br, xenon and krypton, as well as high, temperature and low pressure plasma. [Sources: 1, 7]

A workpiece is subjected to the first plasma etching process with the first etching gas in the plasma processing chamber. The workpieces are then briefly subjected to a second plasma etching process, in which second gases and channels are worked in a plasma processing chamber. A third plasma etching process removes all unwanted residues present on the device and uses third et chants and gases from the plasma processing chamber and exposes the workpieces to a third plasma etching process. After the third plasma etching process, the workpieces are exposed to another plasma etching process with third etching gases in another plasma process chamber and finally one workpiece is exposed again, this time for a longer period. [Sources: 6]

The plasma etching process damages the surface of the wafer substrate [201] and stops after the low k-dielectric layer has been completely removed. [Sources: 10]

Therefore, it is necessary to detect the plasma - induced damage to semiconductor processing that occurs. Currently, the method of removing silicon deposits containing low k-dielectric layers (e.g. silicon wafers) from the chamber surface includes the use of plasma-assisted RF (RPF) and plasma etching. [Sources: 2, 4]

In plasma processes, a substrate is normally placed in a vacuum chamber, process gases are introduced, and a plasma is used to produce process gas (e.g. plasma gas injection) and plasma etching. These plasma processes include the use of high temperature, low pressure, high pressure plasma or a combination of both. [Sources: 5]

Depending on the composition of the gas from which the plasma is formed, plasma can be used to deposit a thin layer of material on the wafer or used as a single layer to etch a particular material on a wafer. Plasma can also be generated to perform the desired etching on selected layers of a substrate such as silicon, copper, gold, silver, platinum, etc. Depending on the composition of the gas in which it is produced, a plasma may or may not have been used to deposit thin film material into a wafer. Depending on whether or not the plasma is formed from a gas, it can be used as the primary material for etched materials on WAFERS. Irrespective of its composition or composition, depending on its use as an intermediate material in an SLCA process (e.g. plasma gas injection or plasma injection), a plasma in its primary role could or could not have been used in the etching of a particular material on aWAFER. [Sources: 0, 3]

An exemplary sampling tube material can comprise a thin layer of a particular material such as silicon, copper, gold, silver, platinum, etc. A sample tube of material can comprise either a single layer of silicon or two layers of copper or gold or silver. [Sources: 0, 3]

As mentioned above, the carrier wafer (300) can be made of silicon, copper, gold, silver, platinum or any other material compatible with the silicon etching process. In addition, a silicon wafer test structure can come very close to a real circuit chip such as an amplifier. The 300 wafer carrier lens can be made of either silicon or copper or gold or silver or other materials compatible with the silicon etching process, such as copper lenses or gold and silver waffles. [Sources: 4, 8]

As shown in the FIG. 1, the carrier lens can be made of silicon, copper, gold, silver, platinum or any other material compatible with the silicon etching process. [Sources: 3]

The silicon coupon is coated with 193 passes of organic photoresist and processed with Ar-plasma. The test conditions described above are repeated with the photoreceptors and coated silicon coupons attached to the mere silicon wafer thermal compound in the Ar plasma. As shown in the FIGS. [Sources: 0, 3]

The silicon wafer is subjected to plasma treatment for about 60 seconds and an arc event is detected about 25 seconds after treatment. The silicon wafers are subjected to plasma processing for 30 seconds until an arc event is detected. [Sources: 0, 3]

To simulate an arc event during plasma processing, 193 nm organic photoresist coatings are coated and the silicon wafers are decomposed. To simulate arc events during plasma processing, a 193 nm long coating of organic photoresists is coated and to simulate arc events after plasma treatment, they are decomposed and decomposed. [Sources: 0, 3]

A variety of 100 silicon wafers are cleaned and made hydrophobic and cleaned for normal cinch processing. A large part and 100% of the silicon wafer is cleaned after plasma treatment with a 193 nm long coating of organic photoresist, hyphobic and hydophobic. [Sources: 9]

In the plasma purification chamber, a polymer obtained from CHF 3 is used as a source for reactive species generation. No improvement in the cleaning processes was observed in the kapton (r) coated silicon wafers. Studies have been carried out to use a clean plasma chamber so that process parameters, which tend to be highly reactive and oxidized, can be seen and avoided by using non-reactive polymers such as hydrophobic and hyphobic polymers. [Sources: 7]

 

 

Sources:

[0]: https://www.google.co.cr/patents/WO2009139828A2?cl=en

[1]: http://iopscience.iop.org/article/10.1088/0960-1317/11/4/314/meta

[2]: https://www.google.com.na/patents/US20060054183

[3]: https://patents.google.com/patent/KR20110021768A/en

[4]: https://www.google.co.in/patents/US8193824

[5]: http://www.google.co.jp/patents/US6441620

[6]: https://www.google.co.ve/patents/EP2698812A2

[7]: https://www.freepatentsonline.com/5486235.html

[8]: https://patents.google.com/patent/US6642127B2/en

[9]: https://patents.justia.com/patent/6645828

[10]: http://www.google.com/patents/US20090233447